Solid-state device for high-speed photographing and camera provided with the solid-state imaging device as imaging device
    21.
    发明申请
    Solid-state device for high-speed photographing and camera provided with the solid-state imaging device as imaging device 审中-公开
    用于高速拍摄的固态设备和配有固态成像装置的成像装置

    公开(公告)号:US20080049128A1

    公开(公告)日:2008-02-28

    申请号:US11889209

    申请日:2007-08-09

    IPC分类号: H04N3/14

    摘要: In each pixel of a MOS-type solid-state imaging device, a plurality of first signals and one or more second signals are accumulated in a plurality of storage areas in a storage unit during driving. Here, each of the plurality of first signals corresponds to a light receiving signal (light receiving signal on which noise is superimposed) which is transmitted from a light receiving unit each time a switching unit is in a closed state, and each of the one or more second signals is a signal (noise such as dark-current noise, fixed pattern noise, and the like) as a voltage of a signal readout path when the switching unit is in an open state. Also, in the solid-state imaging device of the present invention, each of the one or more second signals in the storage unit of each image pixel is in a state of being physically or temporally separated from each of the plurality of first signals.

    摘要翻译: 在MOS型固态成像装置的每个像素中,在驱动期间,多个第一信号和一个或多个第二信号被累积在存储单元中的多个存储区域中。 这里,多个第一信号中的每一个对应于每当切换单元处于关闭状态时从光接收单元发送的光接收信号(叠加有噪声的光接收信号),并且每个 更多的第二信号是当开关单元处于打开状态时作为信号读出路径的电压的信号(诸如暗电流噪声,固定图案噪声等的噪声)。 此外,在本发明的固态成像装置中,每个图像像素的存储单元中的一个或多个第二信号中的每一个处于与多个第一信号中的每一个物理或时间上分离的状态。

    Noise reduction circuit
    22.
    发明申请
    Noise reduction circuit 有权
    降噪电路

    公开(公告)号:US20080024206A1

    公开(公告)日:2008-01-31

    申请号:US11826582

    申请日:2007-07-17

    IPC分类号: H03K5/00

    CPC分类号: H03K5/1252 H04N5/21

    摘要: A noise reduction circuit receives, as an input signal, a voltage difference between two different signals. The noise reduction circuit includes: an amplifier circuit for amplifying the two different signals; a voltage difference detection circuit for detecting a voltage difference between the two different signals amplified by the amplifier circuit; and an electric charge accumulation circuit section or a voltage adding circuit. The electric charge accumulation circuit section accumulates, a predetermined number of times, an electric charge corresponding to the voltage difference detected by the voltage difference detection circuit and combines the accumulated electric charges to output the resultant electric charge. The voltage adding circuit adds, a predetermined number of times, the voltage difference detected by the voltage difference detection circuit.

    摘要翻译: 噪声降低电路作为输入信号接收两个不同信号之间的电压差。 噪声降低电路包括:用于放大两个不同信号的放大器电路; 用于检测由放大器电路放大的两个不同信号之间的电压差的电压差检测电路; 和电荷累积电路部分或电压相加电路。 电荷累积电路部分累积与由电压差检测电路检测出的电压差对应的电荷的预定次数,并组合累计的电荷以输出所得的电荷。 电压加法电路将电压差检测电路检测出的电压差加上规定次数。

    Solid-state imaging device
    23.
    发明申请
    Solid-state imaging device 有权
    固态成像装置

    公开(公告)号:US20070285544A1

    公开(公告)日:2007-12-13

    申请号:US11785625

    申请日:2007-04-19

    IPC分类号: H04N3/14

    摘要: Provided is a solid-state imaging device that can perform a high-speed imaging, with appropriate number of pixels maintained. A plurality of pixels are arranged in a matrix in the solid-state imaging device. Each pixel includes a plurality of signal charge holding units that hold signal charges output from a photo diode. A write target switching unit selects the signal charge holding units so that signal charges output at different time points are written to the signal charge holding units, respectively. A read target switching unit switches between signal charge holding units from which to read a signal charge.

    摘要翻译: 提供了一种固态成像装置,其可以执行适当数量的像素的高速成像。 在固态成像装置中以矩阵形式排列多个像素。 每个像素包括保持从光电二极管输出的信号电荷的多个信号电荷保持单元。 写目标切换单元选择信号电荷保持单元,使得在不同时间点输出的信号电荷分别被写入信号电荷保持单元。 读取目标切换单元在从其读取信号电荷的信号电荷保持单元之间切换。

    Noise reduction circuit
    25.
    发明授权
    Noise reduction circuit 有权
    降噪电路

    公开(公告)号:US07589585B2

    公开(公告)日:2009-09-15

    申请号:US11826582

    申请日:2007-07-17

    IPC分类号: H03K17/16 H03K5/00

    CPC分类号: H03K5/1252 H04N5/21

    摘要: A noise reduction circuit outputs a signal corresponding to a voltage difference between two different signals. The noise reduction circuit includes: an amplifier circuit for amplifying the two different signals at different timings; and a voltage difference detection circuit for detecting a voltage difference between the two different signals amplified by the amplifier circuit. The noise reduction circuit accumulates, a predetermined number of times, an electric charge corresponding to the voltage difference detected by the voltage difference detection circuit and combines the accumulated electric charges to output a resultant electric charge.

    摘要翻译: 噪声降低电路输出与两个不同信号之间的电压差对应的信号。 噪声降低电路包括:放大器电路,用于在不同的定时放大两个不同的信号; 以及电压差检测电路,用于检测由放大器电路放大的两个不同信号之间的电压差。 噪声降低电路以预定次数累积与由电压差检测电路检测出的电压差对应的电荷,并组合累积的电荷以输出所得的电荷。

    SOLID STATE IMAGING DEVICE AND CAMERA
    26.
    发明申请
    SOLID STATE IMAGING DEVICE AND CAMERA 审中-公开
    固态成像装置和摄像机

    公开(公告)号:US20080291305A1

    公开(公告)日:2008-11-27

    申请号:US12100289

    申请日:2008-04-09

    IPC分类号: H04N5/335

    CPC分类号: H04N5/335 H04N5/35527

    摘要: In a solid state imaging device having a wide dynamic range, a pixel includes a photodiode that generates a charge in accordance with an intensity of incident light, signal generation units that generate a first voltage level in accordance with an amount of charge generated by the photodiode in an exposure period T1 and a second voltage level in accordance with an amount of charge generated by the photodiode in an exposure period T2, and signal composition units that composite the first and second voltage levels generated by the signal generation units.

    摘要翻译: 在具有宽动态范围的固态成像装置中,像素包括根据入射光强度产生电荷的光电二极管,根据由光电二极管产生的电荷量产生第一电压电平的信号产生单元 在曝光期间T1和第二电压电平中,根据在曝光期间T2中由光电二极管产生的电荷量,以及合成由信号发生单元产生的第一和第二电压电平的信号合成单元。

    Solid-state imaging device and driving method for a solid-state imaging device
    27.
    发明申请
    Solid-state imaging device and driving method for a solid-state imaging device 有权
    固态成像装置及其固体成像装置的驱动方法

    公开(公告)号:US20080036889A1

    公开(公告)日:2008-02-14

    申请号:US11889202

    申请日:2007-08-09

    IPC分类号: H04N5/335 H04N3/14

    摘要: A solid-state imaging device that enables more images to be photographed and a reading time to be shortened by effectively using storage cells is provided. By combining pieces of information which correspond to signal charges output from a photoelectric converter and are sequentially stored in storage cells, it is possible to store more pieces of information than the number of storage cells. Also, by reading the combined information stored in one storage cell, it is possible to read more pieces of information by a single reading operation.

    摘要翻译: 提供一种能够通过有效地使用存储单元来拍摄更多图像并缩短读取时间的固态成像装置。 通过组合对应于从光电转换器输出的信号电荷的信息并且顺序地存储在存储单元中,可以存储比存储单元数更多的信息。 此外,通过读取存储在一个存储单元中的组合信息,可以通过单次读取操作读取更多的信息。

    Semiconductor memory and method for driving the same

    公开(公告)号:US06618284B2

    公开(公告)日:2003-09-09

    申请号:US10011489

    申请日:2001-12-11

    IPC分类号: G11C1122

    CPC分类号: G11C11/22

    摘要: A semiconductor memory includes a ferroelectric capacitor having a ferroelectric film, a first electrode formed on the ferroelectric film and a second electrode formed under the ferroelectric film. A data writing unit causes a first state in which the ferroelectric film has polarization in a direction from the first electrode to the second electrode or in a direction from the second electrode to the first electrode and has a substantially saturated polarization value or a second state in which the ferroelectric film has polarization in the same direction as in the first state and has a substantially zero polarization value, thereby writing a data corresponding to the first state or the second state in the ferroelectric capacitor. A data reading unit detects whether the ferroelectric capacitor is in the first state or in the second state, thereby reading a data stored in the ferroelectric capacitor.

    Semiconductor device
    30.
    发明申请
    Semiconductor device 审中-公开
    半导体器件

    公开(公告)号:US20060095975A1

    公开(公告)日:2006-05-04

    申请号:US11212585

    申请日:2005-08-29

    IPC分类号: H04L9/32

    CPC分类号: G06F21/79 H04L9/085

    摘要: A semiconductor device of the present invention includes: at least one of non-volatile memory unit operable to store data; at least one of an arithmetic-logic unit operable to perform an arithmetic-logic operation using data which is stored in the memory unit and data that is inputted from outside; and an output unit operable to output a result of arithmetic-logic operation performed by the arithmetic-logic unit; wherein the memory unit, the arithmetic-logic unit, and the output unit are included in a functional block, and an output line of each of the memory unit is connected only to one of at least one of the arithmetic-logic unit.

    摘要翻译: 本发明的半导体器件包括:用于存储数据的非易失性存储单元中的至少一个; 算术逻辑单元中的至少一个,其可操作以使用存储在存储单元中的数据和从外部输入的数据执行算术运算; 以及输出单元,其可操作以输出由所述算术单元执行的算术逻辑运算的结果; 其中所述存储器单元,所述算术逻辑单元和所述输出单元包括在功能块中,并且所述存储器单元中的每一个的输出线仅与所述算术单元中的至少一个连接。