Solid-state imaging device
    21.
    发明申请
    Solid-state imaging device 审中-公开
    固态成像装置

    公开(公告)号:US20060291056A1

    公开(公告)日:2006-12-28

    申请号:US11471705

    申请日:2006-06-21

    IPC分类号: G02B5/30

    摘要: By making an aperture 13a to which light of an R (Red) component enters larger than other apertures (apertures 12a, 14a, and 15a), an attenuation ratio of light of the R component can be reduced when compared with the case where each aperture has a same size. Therefore, deterioration in sensitivity to the light of the R component can be suppressed, and deterioration in image quality can be reduced.

    摘要翻译: 通过制造R(红色)分量的光进入其它孔径(孔径12a,14a和15a)的光圈13a,当与R(红色)成分相比,R成分的光的衰减比可以减小 每个孔径具有相同尺寸的情况。 因此,可以抑制对R成分的光的敏感性的降低,并且可以降低图像质量的劣化。

    Solid-state imaging device
    22.
    发明申请
    Solid-state imaging device 审中-公开
    固态成像装置

    公开(公告)号:US20060102827A1

    公开(公告)日:2006-05-18

    申请号:US11272895

    申请日:2005-11-15

    IPC分类号: H01L27/00

    摘要: Provided is a solid-state imaging device which can obtain an output characteristic without preventing linearity even in a high light-intensity range, and at the same time achieve a much wider dynamic range. The solid-state imaging device 1 includes: a photo-detecting element (a photoelectric transducer PD) for transducing incident light to electric charges and accumulate the electric charges; an accumulation element (a floating de-fusion FD) for accumulating the electric charges; and a transfer circuit (a MOS transistor Q11 and a pulse generating circuit 50a) for transferring the electric charges accumulated in the photo-detecting element to the accumulation element, wherein the transfer circuit has two operation modes as follows: a whole transfer for transferring almost all of the accumulated electric charges to the accumulation element; and a partial transfer for transferring only a part of the accumulated electric charges which exceeds a predetermined amount to the accumulation element.

    摘要翻译: 提供了即使在高的光强度范围也可以获得输出特性而不防止线性,同时实现更宽的动态范围的固态成像装置。 固态成像装置1包括:用于将入射光转换成电荷并积累电荷的光检测元件(光电变换器PD) 用于累积电荷的累积元件(浮动解耦FD); 以及用于将累积在光检测元件中的电荷转移到累积元件的转移电路(MOS晶体管Q 11和脉冲发生电路50a),其中传输电路具有如下两种操作模式: 将几乎所有累积的电荷转移到积聚元件; 以及仅将一部分超过预定量的累积电荷传送到累积元件的部分传送。

    Signal transmission circuit
    23.
    发明授权
    Signal transmission circuit 失效
    信号传输电路

    公开(公告)号:US06870401B1

    公开(公告)日:2005-03-22

    申请号:US10902095

    申请日:2004-07-30

    摘要: The signal transmission circuit is provided, said signal transmission circuit being capable of stable operations even with a source power of low voltage and a fast operation. The signal transmission circuit comprises plural stages of circuit in each of which the pulse voltage according to the driving pulse is sequentially outputted. The circuit of each stage includes: the output transistor T12 for outputting the pulse voltage to the source, according to the driving pulse; the bootstrap capacitor C1 connected between the gate and the source of the output transistor; the first charging transistor T11 for charging the bootstrap capacitor; the first and the second discharging transistor T13 and T14 for discharging the electric charge of the bootstrap capacitor; and the logical circuit which (i) turns on the first and the second discharging transistor, according to the driving pulse for each circuit of the other stages, and (ii) turns off the first and the second discharging transistor, according to the gate signal of the charging transistor.

    摘要翻译: 提供信号传输电路,所述信号传输电路即使具有低电压和快速操作的源功率也能够稳定地工作。 信号传输电路包括多个电路,其中根据驱动脉冲的脉冲电压被依次输出。 每级的电路包括:输出晶体管T12,用于根据驱动脉冲将脉冲电压输出到源; 所述自举电容器C1连接在所述输出晶体管的栅极和源极之间; 用于对自举电容器充电的第一充电晶体管T11; 用于放电自举电容器的电荷的第一和第二放电晶体管T13和T14; 和逻辑电路(i)根据其他级的每个电路的驱动脉冲导通第一和第二放电晶体管,以及(ii)根据栅极信号关断第一和第二放电晶体管 的充电晶体管。

    SIGNAL TRANSMISSION CIRCUIT
    24.
    发明申请
    SIGNAL TRANSMISSION CIRCUIT 失效
    信号传输电路

    公开(公告)号:US20050046445A1

    公开(公告)日:2005-03-03

    申请号:US10902095

    申请日:2004-07-30

    摘要: The signal transmission circuit is provided, said signal transmission circuit being capable of stable operations even with a source power of low voltage and a fast operation. The signal transmission circuit comprises plural stages of circuit in each of which the pulse voltage according to the driving pulse is sequentially outputted. The circuit of each stage includes: the output transistor T12 for outputting the pulse voltage to the source, according to the driving pulse; the bootstrap capacitor C1 connected between the gate and the source of the output transistor; the first charging transistor T11 for charging the bootstrap capacitor; the first and the second discharging transistor T13 and T14 for discharging the electric charge of the bootstrap capacitor; and the logical circuit which (i) turns on the first and the second discharging transistor, according to the driving pulse for each circuit of the other stages, and (ii) turns off the first and the second discharging transistor, according to the gate signal of the charging transistor.

    摘要翻译: 提供信号传输电路,所述信号传输电路即使具有低电压和快速操作的源功率也能够稳定地工作。 信号传输电路包括多个电路,其中根据驱动脉冲的脉冲电压被依次输出。 每级的电路包括:输出晶体管T12,用于根据驱动脉冲将脉冲电压输出到源; 所述自举电容器C1连接在所述输出晶体管的栅极和源极之间; 用于对自举电容器充电的第一充电晶体管T11; 用于放电自举电容器的电荷的第一和第二放电晶体管T13和T14; 和逻辑电路(i)根据其他级的每个电路的驱动脉冲导通第一和第二放电晶体管,以及(ii)根据栅极信号关断第一和第二放电晶体管 的充电晶体管。

    Summing signals in pixel units of solid-state imager
    25.
    发明授权
    Summing signals in pixel units of solid-state imager 有权
    以固态成像仪的像素单位求和信号

    公开(公告)号:US08018510B2

    公开(公告)日:2011-09-13

    申请号:US11569603

    申请日:2005-02-25

    IPC分类号: H04N5/335

    CPC分类号: H04N5/374 H04N5/347

    摘要: A solid-state imaging device is provided in which sensitivity is prevented from lowering even when signals of pixels are mixed. The solid-state imaging device includes a plurality of pixel units each of which has a photoelectric conversion element, and is capable of summing signals corresponding to respective outputs of the photoelectric conversion elements of the pixel units. The device includes: a plurality of capacitors, each of which individually accumulates electric charges corresponding to a signal outputted from the associated photoelectric conversion element; and a plurality of MOS transistors which are alternately connected with the associated capacitor. By disconnecting the MOS transistor, the electric charges of the signal outputted from each of the photoelectric conversion elements are accumulated in each associated capacitor, and by conducting the MOS transistors to sum the signals of the pixel units, the capacitors are connected in series.

    摘要翻译: 提供一种固态成像装置,即使在像素的信号混合的情况下也可以防止其降低灵敏度。 固态成像装置包括多个像素单元,每个像素单元具有光电转换元件,并且能够对与像素单元的光电转换元件的各个输出相对应的信号求和。 该装置包括:多个电容器,每个电容器分别累积与从相关联的光电转换元件输出的信号相对应的电荷; 以及与相关联的电容器交替连接的多个MOS晶体管。 通过断开MOS晶体管,从每个相关联的电容器中累积从每个光电转换元件输出的信号的电荷,并且通过使MOS晶体管将像素单元的信号相加,电容器串联连接。

    Solid-state imaging device
    26.
    发明授权
    Solid-state imaging device 有权
    固态成像装置

    公开(公告)号:US07667171B2

    公开(公告)日:2010-02-23

    申请号:US11571461

    申请日:2005-07-04

    IPC分类号: H01L27/00

    摘要: In the case where a subject is captured with a high-luminance light, such as sunlight, for a background, a phenomenon that a portion of the high-luminance subject is detected as a no-signal level is prevented. The solid-state imaging device includes: a photoelectric transducer PD which converts incident light to charges; a voltage level detection circuit 50 in which pixel units 10an1 and 10bn1, each having a voltage conversion amplifying transistor Q13a which outputs a voltage by converting the charges accumulated in the photoelectric transducer PD, are arranged one-dimensionally or two-dimensionally, and which detects a pixel output voltage outputted from each of the pixel units to the common column signal line Ln; and a column signal processing circuit 80 which receives a logic output voltage of the voltage level detection circuit 50 and the pixel output voltage and which outputs a voltage to a horizontal output circuit 90. The column signal processing circuit 80 outputs either a voltage identical to the pixel output voltage or a fixed voltage, depending on the logic output voltage.

    摘要翻译: 在用诸如阳光的高亮度光拍摄被摄体背景的情况下,防止将高亮度被摄体的一部分检测为无信号电平的现象。 固态成像装置包括:将入射光转换成电荷的光电转换器PD; 电压电平检测电路50,其中具有通过转换积累在光电变换器PD中的电荷而输出电压的电压转换放大晶体管Q13a的像素单元10an1和10bn1被一维或二维地排列, 从每个像素单元输出到公共列信号线Ln的像素输出电压; 以及列信号处理电路80,其接收电压电平检测电路50的逻辑输出电压和像素输出电压,并向水平输出电路90输出电压。列信号处理电路80输出与 像素输出电压或固定电压,取决于逻辑输出电压。

    Infrared sensor and infrared sensor array
    27.
    发明授权
    Infrared sensor and infrared sensor array 有权
    红外传感器和红外传感器阵列

    公开(公告)号:US07332717B2

    公开(公告)日:2008-02-19

    申请号:US10580534

    申请日:2005-09-15

    IPC分类号: G01J5/00

    CPC分类号: G01J5/24 G01J1/46 H04N5/33

    摘要: An infrared sensor includes a series capacitor element and a reference capacitor element each exhibiting a predetermined capacitance value; an infrared-detecting capacitor element whose capacitance value varies depending on an intensity of infrared light incident on the element; and an output node being a node at which a first terminal of the series capacitor element, a first terminal of the reference capacitor element and a first terminal of the infrared-detecting capacitor element are connected to one another. The intensity of infrared light is output as a potential difference between the reference potential which is brought to a potential by applying a predetermined voltage between the series capacitor element and the reference capacitor element and the detection potential which is brought to a potential by applying a predetermined voltage between the series capacitor element and the infrared-detecting capacitor element.

    摘要翻译: 红外线传感器包括串联电容器元件和参考电容器元件,每个都具有预定的电容值; 其电容值根据入射到元件上的红外光的强度而变化的红外线检测电容器元件; 并且输出节点是串联电容器元件的第一端子,参考电容器元件的第一端子和红外线检测电容器元件的第一端子彼此连接的节点。 红外光的强度通过在串联电容器元件和参考电容器元件之间施加预定电压而被引入到电位的参考电位之间的电位差和通过施加预定的 串联电容器元件和红外线检测电容器元件之间的电压。

    Solid-State Imaging Device
    28.
    发明申请
    Solid-State Imaging Device 有权
    固态成像装置

    公开(公告)号:US20070222867A1

    公开(公告)日:2007-09-27

    申请号:US11569603

    申请日:2005-02-25

    IPC分类号: H04N5/228

    CPC分类号: H04N5/374 H04N5/347

    摘要: A solid-state imaging device is provided in which sensitivity is prevented from lowering even when signals of pixels are mixed. The solid-state imaging device includes a plurality of pixel units each of which has a photoelectric conversion element, and is capable of summing signals corresponding to respective outputs of the photoelectric conversion elements of the pixel units. The device includes: a plurality of capacitors, each of which individually accumulates electric charges corresponding to a signal outputted from the associated photoelectric conversion element; and a plurality of MOS transistors which are alternately connected with the associated capacitor. By disconnecting the MOS transistor, the electric charges of the signal outputted from each of the photoelectric conversion elements are accumulated in each associated capacitor, and by conducting the MOS transistors to sum the signals of the pixel units, the capacitors are connected in series.

    摘要翻译: 提供一种固态成像装置,即使在像素的信号混合的情况下也能够防止其降低灵敏度。 固态成像装置包括多个像素单元,每个像素单元具有光电转换元件,并且能够对与像素单元的光电转换元件的各个输出相对应的信号求和。 该装置包括:多个电容器,每个电容器分别累积与从相关联的光电转换元件输出的信号相对应的电荷; 以及与相关联的电容器交替连接的多个MOS晶体管。 通过断开MOS晶体管,从每个相关联的电容器中累积从每个光电转换元件输出的信号的电荷,并且通过使MOS晶体管将像素单元的信号相加,电容器串联连接。

    Solid-state imaging device, camera, power supply device and method thereof
    29.
    发明授权
    Solid-state imaging device, camera, power supply device and method thereof 有权
    固态成像装置,相机,电源装置及其方法

    公开(公告)号:US07349019B2

    公开(公告)日:2008-03-25

    申请号:US10901120

    申请日:2004-07-29

    IPC分类号: H04N3/14

    CPC分类号: H04N5/357 H04N5/374

    摘要: With the use of the MOS-type solid-state imaging device, it is possible, by extending the period during which the VDD voltage rises from Low level to High level, that the gate voltage of the resetting unit does not fluctuate to have a positive electric potential due to the coupling capacitance between the VDD power and the gate of the resetting unit, unlike the conventional case. Consequently, the electrons necessary for rendering the accumulation unit non-selectable do not flow from the accumulation unit to the VDD power. This prevents the level of the electric potential in the accumulation unit of non-selectable row from becoming positive. Also, the detecting unit is not switched on, which prevents the error of selecting a non-selectable row.

    摘要翻译: 通过使用MOS型固态成像装置,通过将VDD电压从低电平上升到高电平的期间,能够使复位部的栅极电压不发生波动, 与传统情况不同,由于VDD功率与复位单元的栅极之间的耦合电容引起的电位。 因此,使不可选择的累积单元所需的电子不会从累积单元流向VDD电力。 这防止了非可选行的累积单元中的电位的电平变为正。 此外,检测单元不被接通,这防止了选择不可选行的错误。

    Solid-State Imaging Device
    30.
    发明申请
    Solid-State Imaging Device 有权
    固态成像装置

    公开(公告)号:US20080061216A1

    公开(公告)日:2008-03-13

    申请号:US11571461

    申请日:2005-07-04

    IPC分类号: H01L27/00

    摘要: In the case where a subject is captured with a high-luminance light, such as sunlight, for a background, a phenomenon that a portion of the high-luminance subject is detected as a no-signal level is prevented.The solid-state imaging device includes: a photoelectric transducer PD which converts incident light to charges; a voltage level detection circuit 50 in which pixel units 10an1 and 10bn1, each having a voltage conversion amplifying transistor Q13a which outputs a voltage by converting the charges accumulated in the photoelectric transducer PD, are arranged one-dimensionally or two-dimensionally, and which detects a pixel output voltage outputted from each of the pixel units to the common column signal line Ln; and a column signal processing circuit 80 which receives a logic output voltage of the voltage level detection circuit 50 and the pixel output voltage and which outputs a voltage to a horizontal output circuit 90. The column signal processing circuit 80 outputs either a voltage identical to the pixel output voltage or a fixed voltage, depending on the logic output voltage.

    摘要翻译: 在用诸如阳光的高亮度光拍摄被摄体背景的情况下,防止将高亮度被摄体的一部分检测为无信号电平的现象。 固态成像装置包括:将入射光转换成电荷的光电转换器PD; 电压电平检测电路50,其中通过转换积累在光电变换器PD中的电荷来输出电压的每个具有电压转换放大晶体管Q13a的像素单元10,1和10bn1被一维或两个 并且其检测从每个像素单元输出到公共列信号线Ln的像素输出电压; 以及列信号处理电路80,其接收电压电平检测电路50的逻辑输出电压和像素输出电压,并向水平输出电路90输出电压。 列信号处理电路80根据逻辑输出电压输出与像素输出电压或固定电压相同的电压。