摘要:
An electroluminescent device emits light at a pump wavelength. A first photoluminescent element covers first and second regions of the electroluminescent device and converts at least some of the pump light from the first region of the electroluminescent device to light at a first wavelength. A second photoluminescent element covers the second region of the electroluminescent device without covering the first region of the electroluminescent device and converts at least some of the light of the pump wavelength to light at a second wavelength different from the first wavelength. In some embodiments the first and second photoluminescent elements convert substantially all of the pump light incident from the first and second regions of the electroluminescent device respectively. An etch-stop layer may separate the first and second photoluminescent elements.
摘要:
Light emitting devices and methods of fabricating the same are disclosed. The light emitting device includes a light emitting diode (LED) that emits blue or UV light and is attached to a semiconductor construction. The semiconductor construction includes a re-emitting semiconductor construction that includes at least one layer of a II-VI compound and converts at least a portion of the emitted blue or UV light to longer wavelength light. The semiconductor construction further includes an etch-stop construction that includes an AlInAs or a GaInAs compound. The etch-stop is capable of withstanding an etchant that is capable of etching InP.
摘要:
An arrangement of light sources is attached to a semiconductor wavelength converter. Each light source emits light at a respective peak wavelength, and the arrangement of light sources is characterized by a first range of peak wavelengths. The semiconductor wavelength converter is characterized by a second range of peak wavelengths when pumped by the arrangement of light sources. The second range of peak wavelengths is narrower than the first range of peak wavelengths. The semiconductor wavelength converter is characterized by an absorption edge having a wavelength longer than the longest peak wavelength of the light sources. The wavelength converter may also be used for reducing the wavelength variation in the output from an extended light source.
摘要:
An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.
摘要:
An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.
摘要:
An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.
摘要:
A layered construction is provided comprising an InP substrate and alternating layers of II-VI and III-V materials. The alternating layers of II-VI and III-V materials are typically lattice-matched or pseudomorphic to the InP substrate. Typically the II-VI material is selected from the group consisting of ZnSe, CdSe, BeSe, MgSe, ZnTe, CdTe, BeTe, MgTe, ZnS, CdS, BeS, MgS and alloys thereof, more typically selected from the group consisting of CdZnSe, CdMgZnSe, BeZnTe, and BeMgZnTe alloys, and is most typically CdxZn1-xSe where x is between 0.44 and 0.54. Typically the III-V material is selected from the group consisting of InAs, AlAs, GaAs, InP, AlP, GaP, InSb, AlSb, GaSb, and alloys thereof, more typically selected from the group consisting of InP, InAlAs, GaInAs, AlInGaAs and GaInAsP alloys, and is most typically InP or InyAl1-yAs where y is between 0.44 and 0.52. In one embodiment, the layered construction forms one or more distributed Bragg reflectors (DBR's). In another aspect, the present invention provides a layered construction comprising: an InP substrate and a distributed Bragg reflector (DBR) having a reflectivity of 95% or greater which comprises no more than 15 layer pairs of epitaxial semiconductor materials. In another aspect, the present invention provides a laser comprising a layered construction according to the present invention. In another aspect, the present invention provides a photodetector comprising a layered construction according to the present invention.
摘要翻译:提供了包括InP衬底和II-VI和III-V材料的交替层的分层结构。 II-VI和III-V材料的交替层通常与InP衬底晶格匹配或伪构。 通常,II-VI材料选自ZnSe,CdSe,BeSe,MgSe,ZnTe,CdTe,BeTe,MgTe,ZnS,CdS,BeS,MgS及其合金,更典型地选自CdZnSe, CdMgZnSe,BeZnTe和BeMgZnTe合金,并且最典型的是Cd x Zn 1-x Se,其中x在0.44和0.54之间。 通常,III-V材料选自InAs,AlAs,GaAs,InP,AlP,GaP,InSb,AlSb,GaSb及其合金,更典型地选自InP,InAlAs,GaInAs,AlInGaAs 和GaInAsP合金,并且最典型地是InP或Al y Al 1-y,其中y在0.44和0.52之间。 在一个实施例中,分层结构形成一个或多个分布式布拉格反射器(DBR)。 另一方面,本发明提供了一种分层结构,其包括:InP衬底和具有95%或更大的反射率的分布式布拉格反射器(DBR),其包括不超过15层的外延半导体材料。 另一方面,本发明提供一种包括根据本发明的分层结构的激光器。 另一方面,本发明提供了一种包括根据本发明的分层结构的光电检测器。
摘要:
A plug retention apparatus for use in securing two plug members together to prevent undesired disengagement. The plug retention apparatus is affixed to a first plug member using a retention ring which provides a means for adjustable positioning via a threaded coupling to facilitate securing a second plug member to the first plug member. A plug clamp may be rotatably positioned about the second plug member retaining the plug members in a desired position.
摘要:
A hand-held fluorescent lamp assembly powered by typical line supply of 120 VAC, 60 Hz via an attached power cord and employing multiple commonly available fluorescent lamps. The assembly includes switches to independently control the multiple fluorescent lamps. The assembly includes lightweight solid state power regulation components. The power regulation circuit employs a self-oscillating circuit that is approximately matched in frequency of oscillation to the natural frequency of the fluorescent lamp load to automatically ignite the fluorescent lamps. The power regulation circuit includes circuit elements to automatically protect the ballast circuit and lamps from overdrawing in the run state and from abnormal load conditions.
摘要:
An extension cord reel assembly having a housing which has a spool portion and a mounting portion is provided. A spool member having at least one flange member that is continuously welded to a surface upon which the extension cord is to be stored is positioned within the spool portion of the housing. The mounting portion of the housing of the reel assembly is positioned adjacent an outer perimeter of the spool member and is adapted to attach to a suspension member from which the reel assembly can be suspended above the ground.