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    LIGHT EMITTING DIODE WITH BONDED SEMICONDUCTOR WAVELENGTH CONVERTER
    1.
    发明申请
    LIGHT EMITTING DIODE WITH BONDED SEMICONDUCTOR WAVELENGTH CONVERTER 审中-公开
    具有粘结半导体波长转换器的发光二极管

    公开(公告)号：US20110186877A1

    公开(公告)日：2011-08-04

    申请号：US12995655

    申请日：2009-04-23

    申请人： Michael A. Haase ,  Thomas J. Miller ,  Andrew J. Ouderkirk ,  Catherine A. Leatherdale ,  Tommie W. Kelley

    发明人： Michael A. Haase ,  Thomas J. Miller ,  Andrew J. Ouderkirk ,  Catherine A. Leatherdale ,  Tommie W. Kelley

    IPC分类号： H01L33/50 ,  H01L33/08 ,  H01L33/26 ,  B82Y40/00

    CPC分类号： H01L33/08 ,  H01L25/0756 ,  H01L33/504 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An electroluminescent device emits light at a pump wavelength. A first photoluminescent element covers first and second regions of the electroluminescent device and converts at least some of the pump light from the first region of the electroluminescent device to light at a first wavelength. A second photoluminescent element covers the second region of the electroluminescent device without covering the first region of the electroluminescent device and converts at least some of the light of the pump wavelength to light at a second wavelength different from the first wavelength. In some embodiments the first and second photoluminescent elements convert substantially all of the pump light incident from the first and second regions of the electroluminescent device respectively. An etch-stop layer may separate the first and second photoluminescent elements.

    摘要翻译： 电致发光器件以泵浦波长发光。 第一光致发光元件覆盖电致发光器件的第一和第二区域，并将来自电致发光器件的第一区域的至少一些泵浦光转换成第一波长的光。 第二光致发光元件覆盖电致发光器件的第二区域而不覆盖电致发光器件的第一区域，并将泵波长的至少一些光转换成不同于第一波长的第二波长的光。 在一些实施例中，第一和第二光致发光元件基本上分别从电致发光器件的第一和第二区域入射的所有泵浦光转换。 蚀刻停止层可以分离第一和第二光致发光元件。

    DOWN-CONVERTED LIGHT SOURCE WITH UNIFORM WAVELENGTH EMISSION
    2.
    发明申请
    DOWN-CONVERTED LIGHT SOURCE WITH UNIFORM WAVELENGTH EMISSION 有权
    具有均匀波长发射的下变换光源

    公开(公告)号：US20100295057A1

    公开(公告)日：2010-11-25

    申请号：US12810052

    申请日：2008-12-09

    申请人： Xiaoguang Sun ,  Michael A. Haase ,  Thomas J. Miller ,  Terry L Smith ,  Tommie W. Kelley ,  Catherine A. Leatherdale

    发明人： Xiaoguang Sun ,  Michael A. Haase ,  Thomas J. Miller ,  Terry L Smith ,  Tommie W. Kelley ,  Catherine A. Leatherdale

    IPC分类号： H01L33/30 ,  H01L33/44

    CPC分类号： H01L27/156 ,  H01L33/0079 ,  H01L33/505

    摘要： An arrangement of light sources is attached to a semiconductor wavelength converter. Each light source emits light at a respective peak wavelength, and the arrangement of light sources is characterized by a first range of peak wavelengths. The semiconductor wavelength converter is characterized by a second range of peak wavelengths when pumped by the arrangement of light sources. The second range of peak wavelengths is narrower than the first range of peak wavelengths. The semiconductor wavelength converter is characterized by an absorption edge having a wavelength longer than the longest peak wavelength of the light sources. The wavelength converter may also be used for reducing the wavelength variation in the output from an extended light source.

    摘要翻译： 光源的布置附着到半导体波长转换器。 每个光源以相应的峰值波长发光，并且光源的布置的特征在于峰值波长的第一范围。 半导体波长转换器的特征在于通过光源的排列泵浦时的第二峰值波长范围。 峰值波长的第二范围比峰值波长的第一范围窄。 半导体波长转换器的特征在于具有比光源的最长峰值波长长的波长的吸收边。 波长转换器还可以用于减小来自扩展光源的输出中的波长变化。

    Down-converted light source with uniform wavelength emission
    3.
    发明授权
    Down-converted light source with uniform wavelength emission 有权
    具有均匀波长发射的下变频光源

    公开(公告)号：US08338838B2

    公开(公告)日：2012-12-25

    申请号：US12810052

    申请日：2008-12-09

    申请人： Xiaoguang Sun ,  Michael A. Haase ,  Thomas J. Miller ,  Terry L. Smith ,  Tommie W. Kelley ,  Catherine A. Leatherdale

    发明人： Xiaoguang Sun ,  Michael A. Haase ,  Thomas J. Miller ,  Terry L. Smith ,  Tommie W. Kelley ,  Catherine A. Leatherdale

    IPC分类号： H01L33/00

    CPC分类号： H01L27/156 ,  H01L33/0079 ,  H01L33/505

    摘要： An arrangement of light sources is attached to a semiconductor wavelength converter. Each light source emits light at a respective peak wavelength, and the arrangement of light sources is characterized by a first range of peak wavelengths. The semiconductor wavelength converter is characterized by a second range of peak wavelengths when pumped by the arrangement of light sources. The second range of peak wavelengths is narrower than the first range of peak wavelengths. The semiconductor wavelength converter is characterized by an absorption edge having a wavelength longer than the longest peak wavelength of the light sources. The wavelength converter may also be used for reducing the wavelength variation in the output from an extended light source.

    摘要翻译： 光源的布置附着到半导体波长转换器。 每个光源以相应的峰值波长发光，并且光源的布置的特征在于峰值波长的第一范围。 半导体波长转换器的特征在于通过光源的排列泵浦时的第二峰值波长范围。 峰值波长的第二范围比峰值波长的第一范围窄。 半导体波长转换器的特征在于具有比光源的最长峰值波长长的波长的吸收边。 波长转换器还可以用于减小来自扩展光源的输出中的波长变化。

    RE-EMITTING SEMICONDUCTOR CARRIER DEVICES FOR USE WITH LEDS AND METHODS OF MANUFACTURE
    6.
    发明申请
    RE-EMITTING SEMICONDUCTOR CARRIER DEVICES FOR USE WITH LEDS AND METHODS OF MANUFACTURE 有权
    重新发射用于LED的半导体载体装置及其制造方法

    公开(公告)号：US20120097983A1

    公开(公告)日：2012-04-26

    申请号：US13264487

    申请日：2010-05-03

    申请人： Terry L. Smith ,  Catherine A. Leatherdale ,  Michael A. Haase ,  Thomas J. Miller ,  Xiaoguang Sun ,  Zhaohui Yang ,  Todd A. Ballen ,  Amy S. Barnes

    发明人： Terry L. Smith ,  Catherine A. Leatherdale ,  Michael A. Haase ,  Thomas J. Miller ,  Xiaoguang Sun ,  Zhaohui Yang ,  Todd A. Ballen ,  Amy S. Barnes

    IPC分类号： H01L33/60 ,  H01L33/48

    CPC分类号： H01L31/055 ,  H01L33/0079 ,  H01L33/502 ,  H01L2224/48463 ,  H01L2933/0041 ,  H05B33/10 ,  Y02E10/52

    摘要： Re-emitting semiconductor constructions (RSCs) for use with LEDs, and related devices, systems, and methods are disclosed. A method of fabrication includes providing a semiconductor substrate, forming on a first side of the substrate a semiconductor layer stack, attaching a carrier window to the stack, and removing the substrate after the attaching step. The stack includes an active region adapted to convert light at a first wavelength λ1 to visible light at a second wavelength λ2, the active region including at least a first potential well. The attaching step is carried out such that the stack is disposed between the substrate and the carrier window, which is transparent to the second wavelength λ2. The carrier window may also have a lateral dimension greater than that of the stack. The removal step is carried out so as to provide an RSC carrier device that includes the carrier window and the stack.

    摘要翻译： 公开了与LED一起使用的重新发射半导体结构（RSCs）以及相关的器件，系统和方法。 一种制造方法包括提供半导体衬底，在衬底的第一侧上形成半导体层堆叠，将载体窗口附接到堆叠，以及在附接步骤之后移除衬底。 所述堆叠包括适于将第一波长λ1的光转换成第二波长λ2的可见光的有源区，所述有源区至少包括第一势阱。 执行安装步骤使得堆叠被布置在对第二波长λ2透明的基板和载体窗口之间。 载体窗口也可以具有大于堆叠的横向尺寸的横向尺寸。 执行去除步骤以提供包括载体窗口和堆叠的RSC载体装置。

    LIGHT SOURCE HAVING LIGHT BLOCKING COMPONENTS
    8.
    发明申请
    LIGHT SOURCE HAVING LIGHT BLOCKING COMPONENTS 审中-公开
    具有轻型封闭组件的光源

    公开(公告)号：US20110156002A1

    公开(公告)日：2011-06-30

    申请号：US13060850

    申请日：2009-07-28

    申请人： Catherine A. Leatherdale ,  Michael A. Haase ,  Todd A. Ballen ,  Thomas J. Miller

    发明人： Catherine A. Leatherdale ,  Michael A. Haase ,  Todd A. Ballen ,  Thomas J. Miller

    IPC分类号： H01L33/06

    CPC分类号： H01L33/08 ,  H01L33/04 ,  H01L33/44 ,  H01L33/50

    摘要： Light emitting systems are disclosed. The light emitting system includes an electroluminescent device that emits light at a first wavelength from a top surface of the electroluminescent device. The light emitting system further includes a construction proximate a side of the electroluminescent device for blocking light at the first wavelength that would otherwise exit the side. The light emitting system further includes a re-emitting semiconductor construction that includes a II-VI potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the electroluminescent device and converts at least a portion of the received light to light of a second wavelength. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 4 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system.

    摘要翻译： 公开了发光系统。 发光系统包括从电致发光器件的顶表面发射第一波长的光的电致发光器件。 发光系统还包括靠近电致发光器件的侧面的结构，用于阻挡否则将离开侧面的第一波长的光。 发光系统还包括包括II-VI势阱的再发射半导体结构。 再发射半导体结构接收离开电致发光器件的第一波长光，并将接收的光的至少一部分转换成第二波长的光。 离开发光系统的第二波长的所有光的集成发射强度是离开发光系统的第一波长的所有光的集成发射强度的至少4倍。

    LIGHT SOURCE WITH IMPROVED MONOCHROMATICITY
    9.
    发明申请
    LIGHT SOURCE WITH IMPROVED MONOCHROMATICITY 审中-公开
    光源具有改善的单色性

    公开(公告)号：US20110140129A1

    公开(公告)日：2011-06-16

    申请号：US13059022

    申请日：2009-08-18

    申请人： Catherine A. Leatherdale ,  Todd A. Ballen ,  Thomas J. Miller

    发明人： Catherine A. Leatherdale ,  Todd A. Ballen ,  Thomas J. Miller

    IPC分类号： H01L31/173

    CPC分类号： H01L33/08 ,  H01L33/04 ,  H01L33/105 ,  H01L33/44 ,  H01L33/50

    摘要： Light emitting systems are disclosed. The light emitting system includes an LED that emits light at a first wavelength and includes a pattern that enhances emission of light from a top surface of the LED and suppresses emission of light from one or more sides of the LED. The light emitting system further includes a re-emitting semiconductor construction that includes a II-VI potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the LED and converts at least a portion of the received light to light of a second wavelength. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 4 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system.

    摘要翻译： 公开了发光系统。 发光系统包括发射第一波长的光的LED，并且包括增强从LED的顶表面发射光的图案，并抑制来自LED的一侧或多侧的光的发射。 发光系统还包括包括II-VI势阱的再发射半导体结构。 再发射半导体结构接收离开LED的第一波长光，并将接收到的光的至少一部分转换成第二波长的光。 离开发光系统的第二波长的所有光的集成发射强度是离开发光系统的第一波长的所有光的集成发射强度的至少4倍。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MAKING SAME
    10.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MAKING SAME 审中-公开
    半导体发光器件及其制造方法

    公开(公告)号：US20110121319A1

    公开(公告)日：2011-05-26

    申请号：US12744553

    申请日：2008-11-07

    申请人： Michael A. Haase ,  Thomas J. Miller ,  Xiaoguang Sun

    发明人： Michael A. Haase ,  Thomas J. Miller ,  Xiaoguang Sun

    IPC分类号： H01L31/153 ,  H01L31/0336 ,  H01L31/18

    CPC分类号： H01L33/08 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/34

    摘要： Light emitting devices and methods of fabricating the same are disclosed. The light emitting device includes a light emitting diode (LED) that emits blue or UV light and is attached to a semiconductor construction. The semiconductor construction includes a re-emitting semiconductor construction that includes at least one layer of a II-VI compound and converts at least a portion of the emitted blue or UV light to longer wavelength light. The semiconductor construction further includes an etch-stop construction that includes an AlInAs or a GaInAs compound. The etch-stop is capable of withstanding an etchant that is capable of etching InP.

    摘要翻译： 公开了发光器件及其制造方法。 发光器件包括发射蓝色或紫外光并附着到半导体结构的发光二极管（LED）。 半导体结构包括再发射半导体结构，其包括至少一层II-VI化合物，并将发射的蓝色或紫外光的至少一部分转换成更长波长的光。 该半导体结构还包括包括AlInAs或GaInAs化合物的蚀刻停止结构。 蚀刻停止能够承受能够蚀刻InP的蚀刻剂。