公开(公告)号：US11763161B2

公开(公告)日：2023-09-19

申请号：US16820032

申请日：2020-03-16

Applicant: Tokyo Electron Limited

Inventor： Yan Chen ,  Xinkang Tian ,  Zheng Yan

IPC: G01J3/28 ,  G01J3/02 ,  G06N20/00 ,  G06F18/213 ,  G06F18/214 ,  G06V10/44 ,  G06N3/084 ,  G06N3/08 ,  G06V10/82

CPC classification number: G06N3/084 ,  G01J3/0275 ,  G01J3/2823 ,  G06F18/213 ,  G06F18/2148 ,  G06N3/08 ,  G06N20/00 ,  G06V10/454 ,  G06V10/82

Abstract: A data set is stored in memory circuitry that is indicative of a state of a semiconductor fabrication process or of semiconductor structure fabricated thereby. Features in the data set are discernable to an extent limited by a data resolution. A machine-learning model comprising parameters having respective values assigned thereto as constrained by a model training process is also stored in the memory circuitry. Processor circuitry communicatively coupled to the memory circuitry generates an output data set from the data set in accordance with the machine-learning model such that features in the output data set are discernable to an extent limited by an output data resolution that is finer than the data resolution of the data set.

公开(公告)号：US10002804B2

公开(公告)日：2018-06-19

申请号：US15053368

申请日：2016-02-25

Applicant: Tokyo Electron Limited

Inventor： Yan Chen ,  Vi Vuong ,  Serguei Komarov

IPC: G01L21/30 ,  G01R31/00 ,  H01L21/66 ,  H01J37/32 ,  G06F17/16 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01L22/26 ,  G06F17/16 ,  H01J37/32963 ,  H01L21/3065 ,  H01L21/67069

Abstract: Described is a method for determining an endpoint of an etch process using optical emission spectroscopy (OES) data as an input. Optical emission spectroscopy (OES) data are acquired by a spectrometer attached to a plasma etch processing tool. The acquired time-evolving spectral data are first filtered and demeaned, and thereafter transformed into transformed spectral data, or trends, using multivariate analysis such as principal components analysis, in which previously calculated principal component weights are used to accomplish the transform. A functional form incorporating multiple trends may be used to more precisely determine the endpoint of an etch process. A method for calculating principal component weights prior to actual etching, based on OES data collected from previous etch processing, is disclosed, which method facilitates rapid calculation of trends and functional forms involving multiple trends, for efficient and accurate in-line determination of etch process endpoint.