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    HYBRID X-RAY AND OPTICAL METROLOGY AND NAVIGATION
    1.
    发明申请
    HYBRID X-RAY AND OPTICAL METROLOGY AND NAVIGATION 有权

    公开(公告)号：US20250060324A1

    公开(公告)日：2025-02-20

    申请号：US18620332

    申请日：2024-03-28

    Applicant: Tokyo Electron Limited

    Inventor： Francisco Machuca ,  Vi Vuong ,  Andrej Mitrovic ,  Xinkang Tian ,  Holger Tuitje

    IPC: G01N23/2206 ,  G01N21/95 ,  G01N23/201 ,  G01N23/223

    Abstract: A method of characterizing a device under test (DUT) includes illuminating the DUT with a broadband optical beam within an optical field of view (FOV), illuminating the DUT with an X-ray beam within an X-ray FOV overlapping the optical FOV, and concurrently acquiring X-ray metrology information, e.g., one or more X-ray images utilizing various modalities, such as absorption, phase contrast difference, darkfield, small angle X-ray scattering (SAXS) and/or fluorescence, from the X-ray FOV and a plurality of optical images of the optical FOV, each of the optical images corresponding to respective selected wavelengths of the broadband optical beam from each of ultraviolet, visible, and infrared wavelengths, for example including deep ultraviolet, near infrared, or short-wavelength infrared wavelengths. The DUT may be one or more substrates, e.g., stacked, and include electronic devices such as three-dimensional integrated devices.

    METHOD OF ENDPOINT DETECTION OF PLASMA ETCHING PROCESS USING MULTIVARIATE ANALYSIS
    2.
    发明申请
    METHOD OF ENDPOINT DETECTION OF PLASMA ETCHING PROCESS USING MULTIVARIATE ANALYSIS 有权
    使用多重分析的等离子体蚀刻过程的端点检测方法

    公开(公告)号：US20160172258A1

    公开(公告)日：2016-06-16

    申请号：US15053368

    申请日：2016-02-25

    Applicant: Tokyo Electron Limited

    Inventor： Yan Chen ,  Vi Vuong ,  Serguei Komarov

    IPC: H01L21/66 ,  H01L21/3065

    CPC classification number: H01L22/26 ,  G06F17/16 ,  H01J37/32963 ,  H01L21/3065 ,  H01L21/67069

    Abstract: Described is a method for determining an endpoint of an etch process using optical emission spectroscopy (OES) data as an input. Optical emission spectroscopy (OES) data are acquired by a spectrometer attached to a plasma etch processing tool. The acquired time-evolving spectral data are first filtered and demeaned, and thereafter transformed into transformed spectral data, or trends, using multivariate analysis such as principal components analysis, in which previously calculated principal component weights are used to accomplish the transform. A functional form incorporating multiple trends may be used to more precisely determine the endpoint of an etch process. A method for calculating principal component weights prior to actual etching, based on OES data collected from previous etch processing, is disclosed, which method facilitates rapid calculation of trends and functional forms involving multiple trends, for efficient and accurate in-line determination of etch process endpoint.

    Abstract translation: 描述了使用光发射光谱（OES）数据作为输入来确定蚀刻工艺的端点的方法。 光发射光谱（OES）数据通过附着在等离子体蚀刻处理工具上的光谱仪获得。 首先将所获取的时间演变的光谱数据进行滤波并分析，然后使用多元分析（如主成分分析）将其转换为变换的光谱数据或趋势，其中先前计算的主成分权重用于完成变换。 可以使用包含多个趋势的功能形式来更准确地确定蚀刻工艺的终点。 公开了一种基于从先前蚀刻处理收集的OES数据计算实际蚀刻之前的主要分量权重的方法，该方法有助于快速计算涉及多个趋势的趋势和功能形式，以有效和准确地在线确定蚀刻过程 端点。

    Synthetic wavelengths for endpoint detection in plasma etching
    3.
    发明授权
    Synthetic wavelengths for endpoint detection in plasma etching 有权

    公开(公告)号：US10910201B1

    公开(公告)日：2021-02-02

    申请号：US16548333

    申请日：2019-08-22

    Applicant: Tokyo Electron Limited

    Inventor： Yan Chen ,  Xinkang Tian ,  Vi Vuong

    IPC: H01J37/32 ,  H01L21/3065 ,  G06F17/16 ,  H01L21/67

    Abstract: Described is a method for determining an endpoint of an etch process using optical emission spectroscopy (OES) data as an input. OES data is acquired by a spectrometer in a plasma etch processing chamber. The acquired time-evolving spectral data is first filtered and de-meaned, and thereafter transformed into transformed spectral data, or trends, using multivariate analysis such as principal components analysis, in which previously calculated principal component weights are used to accomplish the transform. Grouping of the principal components weights into two separate groups corresponding to positive and negative natural wavelengths, creates separate signed trends (synthetic wavelengths).

    Method of endpoint detection of plasma etching process using multivariate analysis
    4.
    发明授权
    Method of endpoint detection of plasma etching process using multivariate analysis 有权
    使用多变量分析的等离子体蚀刻工艺的端点检测方法

    公开(公告)号：US09330990B2

    公开(公告)日：2016-05-03

    申请号：US14056059

    申请日：2013-10-17

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Yan Chen ,  Serguei Komarov ,  Vi Vuong

    IPC: G01L21/30 ,  G01R31/00 ,  H01L21/66 ,  H01J37/32 ,  G06F17/16 ,  H01L21/67

    CPC classification number: H01L22/26 ,  G06F17/16 ,  H01J37/32963 ,  H01L21/3065 ,  H01L21/67069

    Abstract: Disclosed is a method for determining an endpoint of an etch process using optical emission spectroscopy (OES) data as an input. Optical emission spectroscopy (OES) data are acquired by a spectrometer attached to a plasma etch processing tool. The acquired time-evolving spectral data are first filtered and demeaned, and thereafter transformed into transformed spectral data, or trends, using multivariate analysis such as principal components analysis, in which previously calculated principal component weights are used to accomplish the transform. A functional form incorporating multiple trends may be used to more precisely determine the endpoint of an etch process. A method for calculating principal component weights prior to actual etching, based on OES data collected from previous etch processing, is disclosed, which method facilitates rapid calculation of trends and functional forms involving multiple trends, for efficient and accurate in-line determination of etch process endpoint.

    Abstract translation: 公开了一种使用光发射光谱（OES）数据作为输入来确定蚀刻工艺的端点的方法。 光发射光谱（OES）数据通过附着在等离子体蚀刻处理工具上的光谱仪获得。 首先将所获取的时间演变的光谱数据进行滤波并分析，然后使用多元分析（如主成分分析）将其转换为变换的光谱数据或趋势，其中先前计算的主成分权重用于完成变换。 可以使用包含多个趋势的功能形式来更准确地确定蚀刻工艺的终点。 公开了一种基于从先前蚀刻处理收集的OES数据计算实际蚀刻之前的主要分量权重的方法，该方法有助于快速计算涉及多个趋势的趋势和功能形式，以有效和准确地在线确定蚀刻过程 端点。

    METHOD OF ENDPOINT DETECTION OF PLASMA ETCHING PROCESS USING MULTIVARIATE ANALYSIS
    5.
    发明申请
    METHOD OF ENDPOINT DETECTION OF PLASMA ETCHING PROCESS USING MULTIVARIATE ANALYSIS 有权
    使用多重分析的等离子体蚀刻过程的端点检测方法

    公开(公告)号：US20140106477A1

    公开(公告)日：2014-04-17

    申请号：US14056059

    申请日：2013-10-17

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Yan CHEN ,  Serguei Komarov ,  Vi Vuong

    IPC: H01L21/66 ,  G06F17/16 ,  H01L21/67 ,  H01J37/32

    CPC classification number: H01L22/26 ,  G06F17/16 ,  H01J37/32963 ,  H01L21/3065 ,  H01L21/67069

    Abstract: Disclosed is a method for determining an endpoint of an etch process using optical emission spectroscopy (OES) data as an input. Optical emission spectroscopy (OES) data are acquired by a spectrometer attached to a plasma etch processing tool. The acquired time-evolving spectral data are first filtered and demeaned, and thereafter transformed into transformed spectral data, or trends, using multivariate analysis such as principal components analysis, in which previously calculated principal component weights are used to accomplish the transform. A functional form incorporating multiple trends may be used to more precisely determine the endpoint of an etch process. A method for calculating principal component weights prior to actual etching, based on OES data collected from previous etch processing, is disclosed, which method facilitates rapid calculation of trends and functional forms involving multiple trends, for efficient and accurate in-line determination of etch process endpoint.

    Abstract translation: 公开了一种使用光发射光谱（OES）数据作为输入来确定蚀刻工艺的端点的方法。 光发射光谱（OES）数据通过附着在等离子体蚀刻处理工具上的光谱仪获得。 首先将所获取的时间演变的光谱数据进行滤波并分析，然后使用多元分析（如主成分分析）将其转换为变换的光谱数据或趋势，其中先前计算的主成分权重用于完成变换。 可以使用包含多个趋势的功能形式来更准确地确定蚀刻工艺的终点。 公开了一种基于从先前蚀刻处理收集的OES数据计算实际蚀刻之前的主要分量权重的方法，该方法有助于快速计算涉及多个趋势的趋势和功能形式，以有效和准确地在线确定蚀刻过程 端点。

    Method of endpoint detection of plasma etching process using multivariate analysis
    9.
    发明授权
    Method of endpoint detection of plasma etching process using multivariate analysis 有权

    公开(公告)号：US10002804B2

    公开(公告)日：2018-06-19

    申请号：US15053368

    申请日：2016-02-25

    Applicant: Tokyo Electron Limited

    Inventor： Yan Chen ,  Vi Vuong ,  Serguei Komarov

    IPC: G01L21/30 ,  G01R31/00 ,  H01L21/66 ,  H01J37/32 ,  G06F17/16 ,  H01L21/67 ,  H01L21/3065

    CPC classification number: H01L22/26 ,  G06F17/16 ,  H01J37/32963 ,  H01L21/3065 ,  H01L21/67069

    Abstract: Described is a method for determining an endpoint of an etch process using optical emission spectroscopy (OES) data as an input. Optical emission spectroscopy (OES) data are acquired by a spectrometer attached to a plasma etch processing tool. The acquired time-evolving spectral data are first filtered and demeaned, and thereafter transformed into transformed spectral data, or trends, using multivariate analysis such as principal components analysis, in which previously calculated principal component weights are used to accomplish the transform. A functional form incorporating multiple trends may be used to more precisely determine the endpoint of an etch process. A method for calculating principal component weights prior to actual etching, based on OES data collected from previous etch processing, is disclosed, which method facilitates rapid calculation of trends and functional forms involving multiple trends, for efficient and accurate in-line determination of etch process endpoint.

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