公开(公告)号：US10851468B2

公开(公告)日：2020-12-01

申请号：US15458327

申请日：2017-03-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadashi Iino ,  Toru Ihara ,  Yoshihiro Kai ,  Yoichi Tokunaga

IPC: C25D17/08 ,  H01L21/687 ,  H01L21/67 ,  C25D7/12 ,  C25D17/00 ,  C25D21/12 ,  H01L21/288 ,  H01L21/677

Abstract: A substrate processing apparatus includes a holding device that includes a conductive member and holds a substrate, a conduction path structure that includes a conductive material and positioned such that the conduction path structure is in contact with the holding device, a supply device that supplies a processing liquid to the substrate held by the holding device, and a grounding structure including a variable resistance device that changes a resistance such that the grounding structure has a first end portion connected the conduction path structure and a second end portion connected to a ground potential.

公开(公告)号：US20200227290A1

公开(公告)日：2020-07-16

申请号：US16737027

申请日：2020-01-08

Applicant: Tokyo Electron Limited

Inventor： Yuji Kimura ,  Yoshihiro Kai

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/677

Abstract: A substrate processing apparatus comprises a processing tub and a fluid supply. In the processing tub, a processing is performed on multiple substrates by immersing the multiple substrates in a processing liquid. The fluid supply is disposed under the multiple substrates within the processing tub and configured to discharge a fluid to generate a liquid flow of the processing liquid within the processing tub. Further, the fluid supply includes multiple discharge paths configured to discharge the fluid to different regions in an arrangement direction of the multiple substrates.

公开(公告)号：US20150031214A1

公开(公告)日：2015-01-29

申请号：US14338656

申请日：2014-07-23

Applicant: Tokyo Electron Limited

Inventor： Derek W Bassett ,  Wallace P Printz ,  Gentaro Goshi ,  Hisashi Kawano ,  Yoshihiro Kai

IPC: H01L21/67 ,  H01L21/306

CPC classification number: H01L21/6708 ,  H01L21/30604 ,  H01L21/32134

Abstract: A chemical fluid processing apparatus and a chemical fluid processing method are described, to treat a substrate with a plurality of chemical fluids such that substantially constant temperature is maintained across a substrate surface. The apparatus includes a discharge nozzle above the substrate to supply a first chemical fluid at a first temperature to a front surface of the substrate, a bar nozzle oriented in a radial direction of the substrate to supply a second chemical fluid at a second temperature to the front surface or a back surface of the substrate, the second temperature being higher than the first temperature, and where the bar nozzle includes a plurality of outlets for discharging the second chemical fluid to a plurality of contacting places on the front surface or the back surface of the substrate at different distances from the center of the substrate.

Abstract translation: 描述了一种化学流体处理装置和化学流体处理方法，用多种化学流体处理基板，使得跨基板表面保持基本恒定的温度。 该设备包括位于基板上方的排放喷嘴，以将第一温度下的第一化学流体提供到基板的前表面，沿基板的径向定向的条形喷嘴，以将第二温度下的第二化学流体供应到 所述第二温度高于所述第一温度，并且所述条形喷嘴包括用于将所述第二化学流体排放到所述前表面或所述背面上的多个接触位置的多个出口 的距离衬底的中心不同的距离。