公开(公告)号：US11087992B2

公开(公告)日：2021-08-10

申请号：US16778267

申请日：2020-01-31

申请人： Tokyo Electron Limited

发明人： Tsukasa Hirayama ,  Takao Inada ,  Hironobu Hyakutake ,  Kazuya Koyama ,  Hisashi Kawano

IPC分类号： H01L21/311 ,  H01L21/3213 ,  H01L21/306 ,  B08B3/08 ,  H01L21/67 ,  H01L21/02

摘要： An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.

公开(公告)号：US20190122906A1

公开(公告)日：2019-04-25

申请号：US16165118

申请日：2018-10-19

申请人： Tokyo Electron Limited

发明人： Jian Zhang ,  Takao Inada ,  Hisashi Kawano ,  Seigo Fujitsu ,  Hideaki Sato ,  Teruaki Konishi ,  Toshiyuki Shiokawa ,  Koji Ogura ,  Hiroshi Yoshida

IPC分类号： H01L21/67 ,  H01L21/306

摘要： A substrate processing apparatus, a substrate processing method and a recording medium capable of shortening an etching processing time are provided. The substrate processing apparatus includes a substrate processing tub, a mixing unit and a supply line. The substrate processing tub is configured to perform an etching processing therein with an etching liquid. The mixing unit is configured to mix a new liquid with a silicon-containing compound or a liquid containing the silicon-containing compound. The supply line is configured to supply a mixed solution mixed by the mixing unit into the substrate processing tub.

公开(公告)号：US09922849B2

公开(公告)日：2018-03-20

申请号：US14689129

申请日：2015-04-17

申请人： Tokyo Electron Limited

发明人： Yasuyuki Ido ,  Naoki Shindo ,  Takehiko Orii ,  Keisuke Egashira ,  Yosuke Hachiya ,  Kotaro Ooishi ,  Hisashi Kawano ,  Shinichiro Shimomura

IPC分类号： H01L21/67 ,  H01L21/31 ,  H01L21/306 ,  B05B12/14 ,  B05C11/115

CPC分类号： H01L21/67051 ,  B05B12/14 ,  B05C11/115 ,  H01L21/306 ,  H01L21/31 ,  H01L21/67017 ,  H01L21/6715

摘要： Disclosed is a substrate liquid processing apparatus. The substrate liquid processing apparatus includes a processing unit, a nozzle, a silylation liquid supply mechanism, and a blocking fluid supply mechanism. The processing unit performs a water repellency imparting processing on a substrate by supplying a silylation liquid to the substrate. The nozzle includes an ejection port configured to supply the silylation liquid to the substrate positioned in the processing unit, and a silylation liquid flow path in which the silylation liquid flows toward the ejection port. The silylation liquid supply mechanism supplies the silylation liquid to the silylation liquid flow path in the nozzle through a silylation liquid supply line. The blocking fluid supply mechanism supplies a blocking fluid that blocks the silylation liquid within the silylation liquid flow path in the nozzle from an atmosphere outside the ejection port.

公开(公告)号：US20180012781A1

公开(公告)日：2018-01-11

申请号：US15713800

申请日：2017-09-25

申请人： Tokyo Electron Limited

发明人： Yosuke Kawabuchi ,  Hisashi Kawano ,  Satoru Tanaka ,  Hiroyuki Suzuki ,  Kotaro Oishi ,  Kazuyoshi Shinohara ,  Yuki Yoshida

IPC分类号： H01L21/67 ,  H01L21/02

CPC分类号： H01L21/67051 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/6715

摘要： A throughput in processing a substrate can be improved and a running cost thereof can be reduced. A substrate processing apparatus 1 that processes a substrate 3 with a processing liquid and dries the substrate 3 includes a substrate rotating device 22 configured to rotate the substrate 3; a processing liquid discharging unit 13 configured to discharge the processing liquid toward the substrate 3; a substitution liquid discharging unit 14 configured to discharge a substitution liquid, which is substituted with the processing liquid on the substrate 3, toward the substrate 3 while relatively moving with respect to the substrate 3; and an inert gas discharging unit 15 configured to discharge an inert gas toward a peripheral portion of the substrate 3 in an inclined direction from above the substrate 3 while moving in a direction different from a direction in which the substitution liquid discharging unit 14 is moved.

公开(公告)号：US09818598B2

公开(公告)日：2017-11-14

申请号：US14809373

申请日：2015-07-27

申请人： TOKYO ELECTRON LIMITED ,  JSR CORPORATION

发明人： Meitoku Aibara ,  Yuki Yoshida ,  Hisashi Kawano ,  Masami Yamashita ,  Itaru Kanno ,  Kenji Mochida ,  Motoyuki Shima

IPC分类号： B08B7/00 ,  H01L21/02 ,  H01L21/67 ,  B08B3/08

CPC分类号： H01L21/02057 ,  B08B3/08 ,  H01L21/02041 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/6715

摘要： An object of the present invention is to be able to obtain a high removing performance of particles. The substrate processing method according to the exemplary embodiment comprises a film-forming treatment solution supply step and a removing solution supply step. The film-forming treatment solution supply step comprising supplying to a substrate, a film-forming treatment solution containing an organic solvent and a fluorine-containing polymer that is soluble in the organic solvent is supplied. The removing solution supply step comprises supplying to a treatment film formed by solidification or curing of the film-forming treatment solution on the substrate, a removing solution capable of removing the treatment film.

公开(公告)号：US20170186620A1

公开(公告)日：2017-06-29

申请号：US15371707

申请日：2016-12-07

申请人： Tokyo Electron Limited

发明人： Hiroshi Marumoto ,  Hisashi Kawano ,  Hiromi Kiyose ,  Mitsunori Nakamori ,  Kazuyuki Mitsuoka

IPC分类号： H01L21/3065 ,  H01L21/67 ,  H01L21/324 ,  H01L21/311 ,  H01L21/306 ,  H01L21/02

CPC分类号： H01L21/3065 ,  H01L21/02057 ,  H01L21/02082 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/324 ,  H01L21/67028 ,  H01L21/6704 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708

摘要： A substrate processing method according to the present disclosure includes: a liquid processing process of supplying a processing liquid to a substrate having a surface on which a pattern having a plurality of convex portions is formed; a drying process of removing the processing liquid existing on the surface of the substrate dry the substrate, and a separating process of separating a sticking portion between adjacent ones of the convex portions after the drying process.

公开(公告)号：US11075096B2

公开(公告)日：2021-07-27

申请号：US16675551

申请日：2019-11-06

申请人： Tokyo Electron Limited

发明人： Takao Inada ,  Hironobu Hyakutake ,  Hisashi Kawano

IPC分类号： H01L21/67 ,  H01L21/677 ,  H01L21/311

摘要： A substrate processing method includes etching a substrate on which a silicon oxide film and a silicon nitride film are formed with a phosphoric acid processing liquid. In the etching, a silicon concentration in the phosphoric acid processing liquid is a first silicon concentration at which the silicon oxide film is etched, from a start time until a first time interval has elapsed.

公开(公告)号：US10651061B2

公开(公告)日：2020-05-12

申请号：US16163918

申请日：2018-10-18

申请人： Tokyo Electron Limited

发明人： Hiroki Ohno ,  Takao Inada ,  Hisashi Kawano

IPC分类号： H01L21/66 ,  H01L21/67 ,  H01L21/311

摘要： A substrate processing apparatus includes a processing unit and a control unit. The processing unit is configured to perform an etching processing by immersing a substrate in a processing liquid containing phosphoric acid and a silicon-containing compound. The control unit is configured to control the processing liquid such that the substrate is processed, in a first processing time of the etching processing, with the processing liquid having a first phosphoric acid concentration and a first silicon concentration, and the substrate is processed, in a second processing time later than the first processing time, with the processing liquid having a second preset phosphoric acid concentration lower than the first phosphoric acid concentration and a second preset silicon concentration lower than the first silicon concentration or with the processing liquid having the second preset phosphoric acid concentration and the first silicon concentration.

公开(公告)号：US09805957B2

公开(公告)日：2017-10-31

申请号：US14296813

申请日：2014-06-05

申请人： Tokyo Electron Limited

发明人： Yosuke Kawabuchi ,  Hisashi Kawano ,  Satoru Tanaka ,  Hiroyuki Suzuki ,  Kotaro Oishi ,  Kazuyoshi Shinohara ,  Yuki Yoshida

IPC分类号： H01L21/67 ,  H01L21/02

CPC分类号： H01L21/67051 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/6715

摘要： A throughput in processing a substrate can be improved and a running cost thereof can be reduced. A substrate processing apparatus 1 that processes a substrate 3 with a processing liquid and dries the substrate 3 includes a substrate rotating device 22 configured to rotate the substrate 3; a processing liquid discharging unit 13 configured to discharge the processing liquid toward the substrate 3; a substitution liquid discharging unit 14 configured to discharge a substitution liquid, which is substituted with the processing liquid on the substrate 3, toward the substrate 3 while relatively moving with respect to the substrate 3; and an inert gas discharging unit 15 configured to discharge an inert gas toward a peripheral portion of the substrate 3 in an inclined direction from above the substrate 3 while moving in a direction different from a direction in which the substitution liquid discharging unit 14 is moved.

公开(公告)号：US20150318183A1

公开(公告)日：2015-11-05

申请号：US14689129

申请日：2015-04-17

申请人： Tokyo Electron Limited

发明人： Yasuyuki Ido ,  Naoki Shindo ,  Takehiko Orii ,  Keisuke Egashira ,  Yosuke Hachiya ,  Kotaro Ooishi ,  Hisashi Kawano ,  Shinichiro Shimomura

IPC分类号： H01L21/31 ,  H01L21/67 ,  H01L21/306

CPC分类号： H01L21/67051 ,  B05B12/14 ,  B05C11/115 ,  H01L21/306 ,  H01L21/31 ,  H01L21/67017 ,  H01L21/6715

摘要： Disclosed is a substrate liquid processing apparatus. The substrate liquid processing apparatus includes a processing unit, a nozzle, a silylation liquid supply mechanism, and a blocking fluid supply mechanism. The processing unit performs a water repellency imparting processing on a substrate by supplying a silylation liquid to the substrate. The nozzle includes an ejection port configured to supply the silylation liquid to the substrate positioned in the processing unit, and a silylation liquid flow path in which the silylation liquid flows toward the ejection port. The silylation liquid supply mechanism supplies the silylation liquid to the silylation liquid flow path in the nozzle through a silylation liquid supply line. The blocking fluid supply mechanism supplies a blocking fluid that blocks the silylation liquid within the silylation liquid flow path in the nozzle from an atmosphere outside the ejection port.

摘要翻译： 公开了一种基板液体处理装置。 基板液体处理装置包括处理单元，喷嘴，甲硅烷基化液供给机构和阻塞流体供给机构。 处理单元通过向基板供给甲硅烷化液体，在基板上进行防水赋予处理。 喷嘴包括被配置为将甲硅烷化液体供给到位于处理单元中的基板的喷射口，以及甲硅烷基化液体流路，其中甲硅烷基化液体朝向喷射口流动。 甲硅烷基化液体供应机构通过甲硅烷基化液体供应管线将甲硅烷基化液体提供给喷嘴中的甲硅烷基化液体流动路径。 阻塞流体供应机构从喷射口外部的大气中提供阻塞流体，该阻塞流体在喷嘴内的甲硅烷基化液体流动通道内阻断甲硅烷基化液体。