摘要:
Solving means is configured of a signal input interface, a data calculation unit, and a signal output interface. The signal input interface allows image data which is obtained by photographing hole patterns, and CAD data which corresponds to hole patterns included in the image data, to be inputted. The data calculation unit includes: CAD hole-pattern central-position detection means which detects central positions respectively of hole patterns included in the CAD data from the CAD data, and which generates data which represents, with an image, the central positions of the respective hole patterns; pattern extraction means which extracts pattern data from the image data; image hole-pattern central-position detection means which detects central positions of the respective hole patterns in the image data from the pattern data, and which generates data which represents, with an image, the central positions of these hole patterns detected from the image data; and collation process means which detects positional data in the image data corresponding to that in the CAD data through a process of collating the CAD hole-pattern central-position data with the image hole-pattern central-position data. The signal output interface outputs the positional data outputted from the data calculation unit.
摘要:
A pattern matching method which is capable of selecting a suitable measurement object pattern, even on a sample containing a periodic structure, and a computer program for making a computer execute the pattern matching. In a pattern matching method which executes matching between the design data-based first image of an object sample, and a second image, whether or not a periodic structure is included in a region to execute the matching is determined, so as to select a pattern, based on distance between an original point which is set in said image, and the pattern configuring said periodic structure, in the case where the periodic structure is included in said region, and to select a pattern based on coincidence of the pattern in said image, in the case where the periodic structure is not included in said region, and a computer program product.
摘要:
The present invention relates to a dimension measuring SEM system and a circuit pattern evaluating system capable of achieving accurate, minute OPC evaluation, the importance of which increase with the progressive miniaturization of design pattern of a circuit pattern for a semiconductor device, and a circuit pattern evaluating method. Design data and measured data on an image of a resist pattern formed by photolithography are superposed for the minute evaluation of differences between a design pattern defined by the design data and the image of the resist pattern, and one- or two-dimensional geometrical features representing differences between the design pattern and the resist pattern are calculated. In some cases, the shape of the resist pattern differs greatly from the design pattern due to OPE effect (optical proximity effect). To superpose the design data and the measured data on the resist pattern stably and accurately, an exposure simulator calculates a simulated pattern on the basis of photomask data on a photomask for an exposure process and exposure conditions and superposes the simulated pattern and the image of the resist pattern.
摘要:
There is provided an electron microscope which is capable of making a significant contribution to accomplishment of efficiency in investigating causes for pattern abnormalities found out. The electron microscope including an I/O for capturing image data on a microscopic image acquired by another electron microscope, a computation processing unit for generating a display signal based on the image data on the microscopic image acquired by another electron microscope and captured via the I/O and image data on a microscopic image acquired by the electron microscope itself, in order that the microscopic image acquired by another electron microscope and the microscopic image acquired by the electron microscope itself are displayed at the same scale and under the same display condition, and a display unit for displaying both of the microscopic images based on the display signal from the computation processing unit.
摘要:
A pattern measuring method and device are provided which set a reference position for a measuring point to be measured by a scanning electron microscope and the like, based on position information of a reference pattern on an image acquired from the scanning electron microscope and based on a positional relation, detected by using design data, between the measuring point and the reference pattern formed at a position isolated from the measuring point.
摘要:
There is provided an electron microscope which is capable of making a significant contribution to accomplishment of efficiency in investigating causes for pattern abnormalities found out. The electron microscope including an I/O for capturing image data on a microscopic image acquired by another electron microscope, a computation processing unit for generating a display signal based on the image data on the microscopic image acquired by another electron microscope and captured via the I/O and image data on a microscopic image acquired by the electron microscope itself, in order that the microscopic image acquired by another electron microscope and the microscopic image acquired by the electron microscope itself are displayed at the same scale and under the same display condition, and a display unit for displaying both of the microscopic images based on the display signal from the computation processing unit.
摘要:
A pattern inspection apparatus can be provided, for example, in a scanning electron microscope system. When patterns of a plurality of layers are included in a SEM image, the apparatus separates the patterns according to each layer by using design data of the plurality of layers corresponding to the patterns. Consequently, the apparatus can realize inspection with use of only the pattern of a target layer to be inspected, pattern inspection differently for different layers, or detection of a positional offset between the layers.
摘要:
There is provided a pattern inspection apparatus that is capable of detecting a defect accurately and efficiently to inspect a pattern of a semiconductor device. The pattern inspection apparatus includes: a contour extraction means for extracting contour data of a pattern from a captured image of the semiconductor device; a non-linear part extraction means for extracting a non-linear part from the contour data; an angular part extraction means for extracting an angular part of a pattern from design data of the semiconductor device; and a defect detection section that compares a position of the non-linear part extracted by the non-linear part extraction section with a position of the angular part extracted by the angular part extraction section so as to detect a position of a defective part of a pattern.
摘要:
A pattern matching method which is capable of selecting a suitable measurement object pattern, even on a sample containing a periodic structure, and a computer program for making a computer execute the pattern matching. In a pattern matching method which executes matching between the design data-based first image of an object sample, and a second image, whether or not a periodic structure is included in a region to execute the matching is determined, so as to select a pattern, based on distance between an original point which is set in said image, and the pattern configuring said periodic structure, in the case where the periodic structure is included in said region, and to select a pattern based on coincidence of the pattern in said image, in the case where the periodic structure is not included in said region, and a computer program product.
摘要:
Easily and correctly measuring a dimension of a pattern of a photomask or of an OPC pattern of the photomask.A pattern measurement method of the present invention includes steps of obtaining both a standard pattern corresponding to a predetermined pattern and a measurement point specified in advance; setting a measurement area so that it includes two straight line segments on both sides of the measurement point among outlines of the standard pattern; and measuring a dimension between two contours of the scanned image of the predetermined pattern in the measurement area by superposing the measurement area on the scanned image of the predetermined pattern. The measurement area is set so as not to include portions near corner portions connected to two line segments.