摘要:
A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.
摘要:
A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.
摘要:
An improved solid-state image sensor is provided by having an image sensing element composed of photoelectric conversion parts, a microlens formed on the surface of the image sensing element corresponding to each photoelectric conversion part, and optical fiber bundle formed of optical fibers arranged in a two-dimensional shape and mounted on the microlens. The optical fiber bundle is also composed of a core and a clad portion. The refractive index of a filler which mounts the optical fiber bundle on the microlens is less than that of the microlens and greater than that of the clad portion of each of the optical fibers.
摘要:
The solid-state image sensor device includes a photodiode section having a storage region of a second conductivity type and a surface layer of a first conductivity type, a vertical CCD register having a buried layer of the second conductivity type and a plurality of transfer electrodes, and a transfer gate having a transfer gate electrode. A channel control region of the second conductivity type is provided on a surface of the semiconductor substrate region covered by the transfer gate. With the channel control region of the second conductivity type provided at a surface portion of the semiconductor substrate region of the transfer gate, the charge read-out channel for reading out charge from the storage region into the buried layer may be readily formed. Thus, it is possible to reduce the read-out voltage or reduce the gate length of the transfer gate.
摘要:
A solid-state image sensor includes a color filter covering a solid-state imaging device and having at least three kinds of filter elements arranged in rows and columns. Each of the filter elements transmits red, green, and blue light over its entire surface area with a transmittance of at least 20 to 80 percent for each color light.
摘要:
A row scanning unit is configured to change a potential of a transfer signal from a second potential V2 to a third potential V3 prior to driving of a transfer operation for causing a transfer of signal charges from a photodiode to a floating diffusion, by supplying a transfer pulse having a first potential V1. The first potential V1 is a positive potential for turning a transfer transistor into ON state, the second potential V2 is a potential for causing pinning of holes under a gate of the transfer transistor and turning the transfer transistor into OFF state, and the third potential V3 is a potential for not causing the pinning of the holes under the gate of the transfer transistor and turning the transfer transistor into OFF state, the third potential being lower than the first potential and higher than the second potential.
摘要:
A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.
摘要:
An imaging apparatus that can shoot a moving image and a still image includes: a CCD 1; an illumination light source 3 for illuminating a subject; and a controlling apparatus 10 for controlling the CCD 1 and the illumination light source 3. The CCD 1 includes: a plurality of photoelectric conversion parts that are arranged in matrix; and a vertical charge transfer part for reading out a charge that is accumulated in each of the photoelectric conversion parts, the controlling apparatus 10 allows the vertical charge transfer part to read out the charge in a state where the illumination light source 3 is ON at a time of shooting the moving image, and when an instruction for shooting the still image is provided, the controlling apparatus turns OFF the illumination light source 3 after completion of light exposure for obtaining the still image, allows the vertical charge transfer part to read out all of the charges by dividing the charges into a plurality of fields while the illumination light source 3 is OFF, and synthesizes the charges that are read out separately by the respective fields so as to generate one still image.
摘要:
A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.
摘要:
A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.