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公开(公告)号：US20080036856A1
公开(公告)日：2008-02-14
申请号：US11763101
申请日：2007-06-14
申请人： Tohru Yamada , Nobukazu Teranishi
发明人： Tohru Yamada , Nobukazu Teranishi
IPC分类号： A61B1/04
CPC分类号： H04N5/2354 , H04N5/23245 , H04N2005/2255
摘要： An imaging apparatus that can shoot a moving image and a still image includes: a CCD 1; an illumination light source 3 for illuminating a subject; and a controlling apparatus 10 for controlling the CCD 1 and the illumination light source 3. The CCD 1 includes: a plurality of photoelectric conversion parts that are arranged in matrix; and a vertical charge transfer part for reading out a charge that is accumulated in each of the photoelectric conversion parts, the controlling apparatus 10 allows the vertical charge transfer part to read out the charge in a state where the illumination light source 3 is ON at a time of shooting the moving image, and when an instruction for shooting the still image is provided, the controlling apparatus turns OFF the illumination light source 3 after completion of light exposure for obtaining the still image, allows the vertical charge transfer part to read out all of the charges by dividing the charges into a plurality of fields while the illumination light source 3 is OFF, and synthesizes the charges that are read out separately by the respective fields so as to generate one still image.
摘要翻译： 可以拍摄运动图像和静止图像的成像装置包括：CCD 1; 用于照明被摄体的照明光源3; 以及用于控制CCD 1和照明光源3的控制装置10。 CCD 1包括：矩阵排列的多个光电转换部; 以及用于读出在每个光电转换部分中累积的电荷的垂直电荷转移部分，控制装置10允许垂直电荷转移部分在照明光源3处于ON状态下读出电荷 拍摄运动图像的时间，并且当提供用于拍摄静止图像的指令时，控制装置在完成曝光之后关闭照明光源3以获得静止图像，允许垂直电荷转移部分全部读出 通过在照明光源3断开时将电荷分成多个场，并且合成由各个场单独读出的电荷，以产生一个静止图像。
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2.发明授权公开(公告)号：US08792037B2
公开(公告)日：2014-07-29
申请号：US13590670
申请日：2012-08-21
CPC分类号： H04N5/357 , H04N5/3742
摘要： A row scanning unit is configured to change a potential of a transfer signal from a second potential V2 to a third potential V3 prior to driving of a transfer operation for causing a transfer of signal charges from a photodiode to a floating diffusion, by supplying a transfer pulse having a first potential V1. The first potential V1 is a positive potential for turning a transfer transistor into ON state, the second potential V2 is a potential for causing pinning of holes under a gate of the transfer transistor and turning the transfer transistor into OFF state, and the third potential V3 is a potential for not causing the pinning of the holes under the gate of the transfer transistor and turning the transfer transistor into OFF state, the third potential being lower than the first potential and higher than the second potential.
摘要翻译： 行扫描单元被配置为在驱动用于使来自光电二极管的信号电荷到浮动扩散的传输操作的驱动之前将传输信号的电位从第二电位V2改变为第三电位V3，通过提供转移 具有第一电位V1的脉冲。 第一电位V1是将转移晶体管转换为导通状态的正电位，第二电位V2是用于使转移晶体管的栅极下方的空穴锁定的电位，并将转移晶体管转换为截止状态，第三电位V3 是不会导致在转移晶体管的栅极下方的钉锁钉并将转移晶体管转为断开状态的可能性，第三电位低于第一电位并高于第二电位。
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3.发明授权Solid state image sensor with transparent film on micro-lenses and offsetting positions of micro-lenses and color filters from a central portion of a corresponding light receiving area 有权固态图像传感器在微透镜上具有透明胶片，并且从对应的光接收区域的中心部分的微透镜和滤色器的偏移位置公开(公告)号：US07411180B2
公开(公告)日：2008-08-12
申请号：US11783703
申请日：2007-04-11
IPC分类号： H01J5/02
CPC分类号： H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/14806
摘要： A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.
摘要翻译： 固态图像传感器包括布置在光接收区域中的多个光接收元件和对应于光接收元件的多个微透镜，并且具有形成在多个微接收元件上的平坦化膜， 镜头 在光接收区域的中心处，将微透镜放置在相应的光电二极管正上方的位置，并且放置在相应的光电二极管正上方的位置上，朝向光接收区域的中心逐渐偏移， 光源距离光接收区域的中心更远。
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4.发明授权Solid-state image sensor, manufacturing method for solid-state image sensor, and camera 有权固态图像传感器，固态图像传感器的制造方法和相机公开(公告)号：US07919743B2
公开(公告)日：2011-04-05
申请号：US12418811
申请日：2009-04-06
IPC分类号： H01J5/02
CPC分类号： H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/14806
摘要： A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.
摘要翻译： 固态图像传感器包括布置在光接收区域中的多个光接收元件和对应于光接收元件的多个微透镜，并且具有形成在多个微接收元件上的平坦化膜， 镜头 在光接收区域的中心处，将微透镜放置在相应的光电二极管正上方的位置，并且放置在相应的光电二极管正上方的位置上，朝向光接收区域的中心逐渐偏移， 光源距离光接收区域的中心更远。
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公开(公告)号：US07619678B2
公开(公告)日：2009-11-17
申请号：US11584560
申请日：2006-10-23
IPC分类号： H04N5/225
CPC分类号： H01L27/14627 , H01L27/14603 , H01L27/1462
摘要： A solid state imaging device includes: a solid state imaging element including a light receiving element, a microlens formed above the light receiving element, a first transparent layer formed on the microlens and a second transparent layer formed on or above the microlens and harder than the first transparent layer; a transparent component formed above the second transparent layer; and an adhesive layer for bonding the second transparent layer and the transparent component. The hard second transparent layer prevents the occurrence of scratches during a dicing step.
摘要翻译： 固态成像装置包括：固态成像元件，包括光接收元件，形成在光接收元件上方的微透镜，形成在微透镜上的第一透明层和形成在微透镜上或之上的第二透明层，并且硬 第一透明层; 形成在所述第二透明层上方的透明部件; 以及用于粘合第二透明层和透明部件的粘合剂层。 硬的第二透明层防止在切割步骤期间发生划痕。
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6.发明申请Solid-state image sensor, manufacturing method for solid-state image sensor, and camera 有权固态图像传感器，固态图像传感器的制造方法和相机公开(公告)号：US20070246640A1
公开(公告)日：2007-10-25
申请号：US11812613
申请日：2007-06-20
IPC分类号： H01L27/00
CPC分类号： H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/14806
摘要： A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.
摘要翻译： 固态图像传感器包括布置在光接收区域中的多个光接收元件和对应于光接收元件的多个微透镜，并且具有形成在多个微接收元件上的平坦化膜， 镜头 在光接收区域的中心处，将微透镜放置在相应的光电二极管正上方的位置，并且放置在相应的光电二极管正上方的位置上，朝向光接收区域的中心逐渐偏移， 光源距离光接收区域的中心更远。
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7.发明申请Solid-state image sensor, manufacturing method for solid-state image sensor, and camera 有权固态图像传感器，固态图像传感器的制造方法和相机公开(公告)号：US20050029433A1
公开(公告)日：2005-02-10
申请号：US10909311
申请日：2004-08-03
IPC分类号： G02B3/00 , H01L27/00 , H01L27/14 , H01L27/148 , H01L31/10 , H04N5/225 , H04N5/335 , H04N5/369
CPC分类号： H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/14806
摘要： The solid-state image sensor in the present invention includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses 7 corresponding to the light-receiving elements, and has a flattening film 8 formed on the plurality of the micro-lenses. At the center of the light-receiving area, micro-lenses 7 are placed in positions directly above the corresponding photodiodes 1, and placed in positions which are progressively offset from the positions directly above the corresponding photodiodes 1, towards the center of the light receiving area, as micro-lenses 7 are located farther from the center of the light-receiving area.
摘要翻译： 本发明的固态图像传感器包括配置在光接收区域中的多个受光元件和对应于光接收元件的多个微透镜7，并且具有形成在 多个微透镜。 在光接收区域的中心处，将微透镜7放置在对应的光电二极管1正上方的位置，并且放置在相对于光电二极管1的正上方的位置逐渐偏离到接收光的中心 区域，因为微透镜7远离光接收区域的中心。
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8.发明授权Solid state imaging apparatus having a plurality of metal wirings for supplying driving pulses to transfer electrodes of vertical CCD registers 失效具有用于提供驱动脉冲以传送垂直CCD寄存器的电极的多个金属布线的固态成像装置
公开(公告)号：US6097433A
公开(公告)日：2000-08-01
申请号：US869442
申请日：1997-06-05
申请人： Shinichi Kawai , Michihiro Morimoto , Masayuki Furumiya , Chihiro Ogawa , Keisuke Hatano , Yasuaki Hokari , Takashi Sato , Nobuhiko Mutoh , Ichiro Murakami , Shinobu Suwazono , Hiroaki Utsumi , Kouichi Arai , Kozo Orihara , Nobukazu Teranishi , Takao Tamura
发明人： Shinichi Kawai , Michihiro Morimoto , Masayuki Furumiya , Chihiro Ogawa , Keisuke Hatano , Yasuaki Hokari , Takashi Sato , Nobuhiko Mutoh , Ichiro Murakami , Shinobu Suwazono , Hiroaki Utsumi , Kouichi Arai , Kozo Orihara , Nobukazu Teranishi , Takao Tamura
IPC分类号： H01L27/148 , H04N5/335 , H04N5/353 , H04N5/359 , H04N5/3722 , H04N5/3728 , H04N3/14
CPC分类号： H01L27/14812
摘要： Shunt wirings (12) in the form of a conductive light intercepting film which covers over vertical CCD registers and also serves to supply power, project into locations between adjacent photoelectric transducers (11) in the vertical direction, and the distance between the projecting portions of adjacent ones of the metal wirings is set to 0.2 .mu.m or less and is limited to a distance with which an electric field between adjacent ones of the metal wirings is 10.sup.7 V/cm or less and the adjacent metal wirings do not suffer from short-circuiting.
摘要翻译： 分流布线（12）以覆盖垂直CCD寄存器的导电遮光膜的形式，并且还用于供电，在垂直方向上投射到相邻的光电传感器（11）之间的位置，并且突出部分 相邻的金属配线设定为0.2μm以下，并且限制在相邻的金属布线之间的电场为107V / cm以下的相邻的金属配线的距离， 电路。
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公开(公告)号：US4484210A
公开(公告)日：1984-11-20
申请号：US297759
申请日：1981-08-31
IPC分类号： H01L27/148 , H01L29/78 , H01L27/14 , H01L31/00
CPC分类号： H01L27/14831
摘要： A solid-state imaging device has a semiconductor substrate of one conductive type. A plurality of light-charge converter regions, of the opposite conductivity type, are formed in the semiconductor substrate. A charge-voltage converter region, formed in the semiconductor substrate, converts the electric charge produced by the light-charge converter regions into a voltage. At least one charge transfer section is formed in the semiconductor substrate for transferring the electric charge produced by the light-charge converter regions to the charge-voltage converter region. At least one charge transfer gate section is in the semiconductor substrate and has a gate electrode for controlling the timing of a transfer of the electric charges from the light-charge converter regions to the charge transfer section. Pulses are generated with a predetermined pulse potential and applied to the gate electrode in the charge transfer gate section. The predetermined pulse potential has the relationshipV.sub.B +2.phi..sub.FP
摘要翻译： 固态成像装置具有一种导电类型的半导体衬底。 在半导体衬底中形成有相反导电类型的多个光电荷转换器区域。 形成在半导体基板中的电荷 - 电压转换器区域将由光电荷转换器区域产生的电荷转换为电压。 在半导体衬底中形成至少一个电荷转移部分，用于将由光电荷转换器区域产生的电荷转移到电荷 - 电压转换器区域。 至少一个电荷转移栅极部分在半导体衬底中并且具有用于控制电荷从光电荷转换器区域转移到电荷转移部分的定时的栅电极。 产生具有预定脉冲电位的脉冲并施加到电荷转移栅极部分中的栅电极。 预定脉冲电位具有关系VB + 2 phi FP
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10.发明授权Solid-state image sensor having micro-lenses arranged to collect light of which the incidence angle has been moderated by a transparent film disposed thereon 有权具有微透镜的固态图像传感器被布置成收集通过其上设置的透明膜调节入射角的光公开(公告)号：US07531782B2
公开(公告)日：2009-05-12
申请号：US11599353
申请日：2006-11-15
IPC分类号： H01L27/00
CPC分类号： H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/14806
摘要： A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.
摘要翻译： 固态图像传感器包括布置在光接收区域中的多个光接收元件和对应于光接收元件的多个微透镜，并且具有形成在多个微接收元件上的平坦化膜， 镜头 在光接收区域的中心处，将微透镜放置在相应的光电二极管正上方的位置，并且放置在相应的光电二极管正上方的位置上，朝向光接收区域的中心逐渐偏移， 光源距离光接收区域的中心更远。
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