公开(公告)号：US20170243977A1

公开(公告)日：2017-08-24

申请号：US15064618

申请日：2016-03-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ting-Yao Lin ,  Ling-Chun Chou ,  Kun-Hsien Lee

IPC: H01L29/78 ,  H01L29/165 ,  H01L29/167 ,  H01L29/423 ,  H01L29/08

CPC classification number: H01L29/7851 ,  H01L29/0865 ,  H01L29/0882 ,  H01L29/165 ,  H01L29/167 ,  H01L29/4236 ,  H01L29/7816 ,  H01L29/7825 ,  H01L29/7848

Abstract: The present invention provides a FinFET device, including at least one fin structure, wherein the fin structure has a first-type well region, and a second-type well region adjacent to the first-type well region, a trench located in the fin structure and disposed between the first-type well region and the second-type well region, an insulating layer disposed in the trench, and a metal gate crossing over and disposed on the insulating layer.

公开(公告)号：US09269811B2

公开(公告)日：2016-02-23

申请号：US14583211

申请日：2014-12-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ling-Chun Chou ,  I-Chang Wang ,  Ching-Wen Hung

IPC: H01L31/119 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/165

CPC classification number: H01L29/7848 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834

Abstract: A manufacturing method for a semiconductor device includes providing a substrate having at least agate structure formed thereon and a first spacer formed on sidewalls of the gate structure, performing an ion implantation to implant dopants into the substrate, forming a disposal spacer having at least a carbon-containing layer on the sidewalls of the gate structure, the carbon-containing layer contacting the first spacer, and performing a thermal treatment to form a protecting layer between the carbon-containing layer and the first spacer.

Abstract translation: 一种用于半导体器件的制造方法，包括提供至少具有玛瑙结构的基板和形成在栅极结构的侧壁上的第一间隔物，进行离子注入以将掺杂剂注入衬底中，形成具有至少一个碳 所述含碳层与所述第一间隔物接触，并进行热处理以在所述含碳层和所述第一间隔物之间​​形成保护层。

公开(公告)号：US20130288446A1

公开(公告)日：2013-10-31

申请号：US13928366

申请日：2013-06-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ted Ming-Lang Guo ,  Chin-Cheng Chien ,  Shu-Yen Chan ,  Ling-Chun Chou ,  Tsung-Hung Chang ,  Chun-Yuan Wu

IPC: H01L29/66

CPC classification number: H01L29/66477 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/7843 ,  H01L29/7847

Abstract: A semiconductor structure including a substrate and a gate structure disposed on the substrate is disclosed. The gate structure includes a gate dielectric layer disposed on the substrate, a gate material layer disposed on the gate dielectric layer and an outer spacer with a rectangular cross section. The top surface of the outer spacer is lower than the top surface of the gate material layer.

Abstract translation: 公开了一种包括衬底和设置在衬底上的栅极结构的半导体结构。 栅极结构包括设置在基板上的栅极介质层，设置在栅极介电层上的栅极材料层和具有矩形横截面的外部间隔物。 外隔离物的顶表面比栅极材料层的顶表面低。