摘要:
The invention concerns a method (300) for directing users to coverage. The method includes the steps of detecting (314) when a signal strength parameter of a mobile unit (112) falls below a predetermined threshold, acquiring (316) positional information about the mobile unit and directing (322) a user of the mobile unit to a reestablishing coverage area (110) that has a signal strength that would cause the signal strength parameter to meet the predetermined threshold. In addition, the method can include the step of calculating (320) positional parameters between the mobile unit and the reestablishing coverage area in which the reestablishing coverage area is a coverage area (110) that is physically closest to the mobile unit in comparison to other coverage areas.
摘要:
A method and apparatus for analyzing cellular telephone records is provided. The analysis applies a statistics-based approach to determine patterns in cellular activity and identify pertinent location information in the cellular telephone records.
摘要:
A fabrication method and materials produce high quality aperiodic photonic structures. Light emission can be activated by thermal annealing post growth treatments when thin film layers of SiO2 and SiNx or Si-rich oxide are used. From these aperiodic structures, that can be obtained in different vertical and planar device geometries, the presence of aperiodic order in a photonic device provides strong group velocity reduction (slow photons), enhanced light-matter interaction, light emission enhancement, gain enhancement, and/or nonlinear optical properties enhancement.
摘要翻译:制造方法和材料产生高质量的非周期光子结构。 当使用SiO 2和SiN x 3或富Si氧化物的薄膜层时,可以通过生长后处理进行热退火来激发发光。 从这些非周期结构可以在不同的垂直和平面器件几何形状中获得,光子器件中非周期性顺序的存在提供了强的组速度降低(慢光子),增强的光物质相互作用,光发射增强,增益增强和 /或非线性光学性能增强。
摘要:
A circuit and method for producing an output voltage that replicates an input voltage. A circuit comprises an amplifier stage configured to amplify a difference between an input voltage and a feedback voltage. An output stage is configured to produce an output voltage equal to the input voltage. The output stage configured to be driven by the difference between the input voltage and the feedback voltage. The output stage further comprises a main supply current path configured to provide a first current from a main supply source, the first current providing at least a portion of the output voltage, and a current management circuit configured to provide a second current from an auxiliary supply source, the second current providing any remaining portion of the output voltage not provided by the first current.
摘要:
A circuit and method for producing an output voltage that replicates an input voltage. A circuit comprises an amplifier stage configured to amplify a difference between an input voltage and a feedback voltage. An output stage is configured to produce an output voltage equal to the input voltage. The output stage configured to be driven by the difference between the input voltage and the feedback voltage. The output stage further comprises a main supply current path configured to provide a first current from a main supply source, the first current providing at least a portion of the output voltage, and a current management circuit configured to provide a second current from an auxiliary supply source, the second current providing any remaining portion of the output voltage not provided by the first current.
摘要:
The present invention is related to semiconductor memories, and in particular, to a nonvolatile or flash memory and method that reduces the effect of or is tolerant of over-erased memory cells. When a memory cell is read, a read voltage is applied to at least one target memory cell, and a negative bias voltage that is lower than a threshold voltage of an over-erased memory cell is also applied to at least one other selected memory cell that is in the same row as the target memory cell. Applying a negative bias voltage to adjacent or proximate memory cells shuts off nearby cells to isolate current that may come from over-erased memory cells during a read, program, or erase operation.