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公开(公告)号：US20080237456A1
公开(公告)日：2008-10-02
申请号：US12110443
申请日：2008-04-28
CPC分类号： H01J37/28 , G01B15/04 , G01N23/2251 , H01J2237/226 , H01J2237/2814
摘要： A method and device for observing a specimen, in which a convergent electron beam is irradiated and scanned from a desired direction, on a surface of a calibration substrate on which a pattern with a known shape is formed, and a beam SEM image of the pattern formed on the calibration substrate is obtained. An actual direction of the electron beam irradiated on the surface of the calibration substrate is calculated by use of the information about an apparent geometric deformation of the known shape on the SEM image, and the actual direction of the electron beam to the desired is adjusted direction by using information of the calculated direction. The pattern with the known shape formed on the calibration substrate has a crystal plane formed by anisotropic chemical etching
摘要翻译： 一种用于观察其中从所需方向照射并扫描会聚电子束的样本在其上形成有已知形状的图案的校准基板的表面上的图案的束SEM扫描图像 形成在校准基板上。 通过使用关于SEM图像上的已知形状的表观几何变形的信息，计算照射在校准基板的表面上的电子束的实际方向，将电子束的实际方向调整为所需的调整方向 通过使用计算出的方向的信息。 在校准基板上形成的具有已知形状的图案具有由各向异性化学蚀刻形成的晶面
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公开(公告)号：US07365325B2
公开(公告)日：2008-04-29
申请号：US11651031
申请日：2007-01-09
CPC分类号： H01J37/28 , G01B15/04 , G01N23/2251 , H01J2237/226 , H01J2237/2814
摘要： A method and device for observing a specimen in which an electron beam is irradiated and scanned from an oblique direction, onto a surface of a calibration substrate on which a pattern with a known shape is formed, and an SEM image of the surface of the calibration substrate is obtained. An angle in an oblique direction of the electron beam irradiated is obtained and is adjusted to a desired angle. The electron beam is irradiated from the adjusted desired angle in the oblique direction, onto a specimen substrate on which a pattern is formed, and an SEM image of the specimen substrate is obtained. The SEM image of the specimen substrate is processed by use of the information of the desired angle, and a 3D image of the pattern on the specimen substrate or a shape of a cross section of the pattern is obtained.
摘要翻译： 一种用于观察其中电子束从倾斜方向照射和扫描的样本到其上形成有已知形状的图案的校准基板的表面上的方法和装置以及校准表面的SEM图像 得到底物。 获得照射的电子束的倾斜方向的角度并将其调节到期望的角度。 将电子束从倾斜方向的调整好的所需角度照射到形成图案的试样基板上，得到试样基板的SEM图像。 通过使用期望角度的信息来处理样本基板的SEM图像，并且获得样本基板上的图案的3D图像或图案的横截面的形状。
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公开(公告)号：US07164128B2
公开(公告)日：2007-01-16
申请号：US10995388
申请日：2004-11-24
CPC分类号： H01J37/28 , G01B15/04 , G01N23/2251 , H01J2237/226 , H01J2237/2814
摘要： It is predicted that an observational direction (or an incident direction of an electron beam) in an observed image actually obtained has some errors compared to a set value. The error portion affects the analysis of the observed image later. Therefore, a convergent electron beam is irradiated on a specimen with a known shape, electrons discharged from the specimen surface are detected, an image of the electron is obtained, an incident direction of the convergent electron beam is estimated based on a geometric deformation on an image of the specimen with a known shape, and a 3D shape or a shape of a cross section of a specimen to be observed from a SEM image of the specimen to be observed is obtained by use of the information of the incident direction of the estimated convergent electron beam.
摘要翻译： 预测实际获得的观察图像中的观察方向（或电子束的入射方向）与设定值相比具有一些误差。 错误部分稍后影响观察图像的分析。 因此，会聚电子束被照射在具有已知形状的样本上，检测从试样表面排出的电子，获得电子的图像，基于上述几何变形来估计会聚电子束的入射方向 通过使用估计的样本的入射方向的信息，获得具有已知形状的样本的图像，以及待观察的样本的SEM图像将要观察的样本的3D形状或截面形状 会聚电子束。
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公开(公告)号：US07889908B2
公开(公告)日：2011-02-15
申请号：US11335515
申请日：2006-01-20
CPC分类号： H01J37/28 , H01J37/222 , H01J2237/226 , H01J2237/2611
摘要： In the past, when a shape was corrected by adjusting parameters of a shape calculating equation proper for a measuring method used in measuring a two-dimensional or three-dimensional shape by correlating the parameters and a shape index value, the degree of freedom of modifying a shape by correction depended on a model equation used in the calculation of the shape, and therefore such a shape correction method was unsuitable for objects of correction having a number of shape variations. According to the present invention, the three-dimensional shape is corrected by fitting a curvature equation to a three-dimensional shape of a semiconductor pattern measured by any three-dimensional shape measuring method and by adjusting parameters of the curvature equation based on a shape index value separately calculated. The relations between the shape index value and the parameters are stored in a data base, and at the time of measurement the measured shapes are corrected based on the relations mentioned above.
摘要翻译： 过去，当通过对参数和形状指标值进行关联来调整用于测量二维或三维形状的测量方法的形状计算方程的参数来校正形状时，修改自由度 通过校正的形状取决于在形状计算中使用的模型方程，因此这种形状校正方法不适合具有多个形状变化的校正对象。 根据本发明，通过将曲率方程拟合为通过任何三维形状测量方法测量的半导体图案的三维形状并且通过基于形状指数调整曲率方程的参数来校正三维形状 价值分别计算。 形状指标值与参数之间的关系存储在数据库中，在测量时，根据上述关系校正测量的形状。
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25.发明申请SEM SYSTEM AND A METHOD FOR PRODUCING A RECIPE FOR IMAGING OR MEASURING A SPECIMEN BY USING THE SEM SYSTEM 有权SEM系统和使用SEM系统生产样品的样品或测量样品的方法公开(公告)号：US20080159609A1
公开(公告)日：2008-07-03
申请号：US11954410
申请日：2007-12-12
IPC分类号： G06K9/00
CPC分类号： G06T7/0006 , G06T2207/30148
摘要： This invention relates to a SEM system constructed to create imaging recipes or/and measuring recipes automatically and at high speed, and improve inspection efficiency and an automation ratio, and to a method using the SEM system; a method for creation of imaging recipes and measuring recipes in the SEM system is adapted to include, in a recipe arithmetic unit, the steps of evaluating a tolerance for an imaging position error level at an evaluation point, evaluating a value predicted of the imaging position error level at the evaluation point when any region on circuit pattern design data is defined as an addressing point, and determining an imaging recipe and a measuring recipe on the basis of a relationship between the tolerance for the imaging position error level at the evaluation point and the predicted value of the imaging position error level at the evaluation point.
摘要翻译： 本发明涉及一种用于自动和高速创建成像配方或/和测量配方，提高检测效率和自动化比例的SEM系统以及使用SEM系统的方法。 用于在SEM系统中创建成像配方和测量配方的方法适于在配方算术单元中包括评估评估点处的成像位置误差水平的公差的步骤，评估成像位置的预测值 当将电路图案设计数据上的任何区域定义为寻址点时，在评估点处的误差水平，以及基于评估点处的成像位置误差水平的公差与所述评估点之间的关系确定成像配方和测量配方 在评估点的成像位置误差水平的预测值。
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公开(公告)号：US20060043293A1
公开(公告)日：2006-03-02
申请号：US11209759
申请日：2005-08-24
申请人： Takashi Doi , Noriaki Arai , Hidetoshi Morokuma , Katsumi Setoguchi , Fumihiro Sasajima , Maki Tanaka , Atsushi Miyamoto
发明人： Takashi Doi , Noriaki Arai , Hidetoshi Morokuma , Katsumi Setoguchi , Fumihiro Sasajima , Maki Tanaka , Atsushi Miyamoto
CPC分类号： G21K1/08 , G01N2223/07 , G01N2223/32 , H01J37/1478 , H01J37/153 , H01J37/21 , H01J37/28 , H01J2237/1536 , H01J2237/216
摘要： A charged particle beam adjustment apparatus for tilting an electron beam by a tilt deflector is disclosed. The tilt angle adjustment of the electron beam and the distortion adjustment for correcting the image distortion generated when the electron beam is tilted are conducted on a specified sample such as a pyramidal sample. The images before and after the tilting are acquired and processed to determine the tilt angle value and the distortion amount. The tilt angle adjustment and the adjustment for correction of the distortion are automated in accordance with a predetermined processing flow.
摘要翻译： 公开了一种用于使倾斜偏转器倾斜电子束的带电粒子束调节装置。 在电子束倾斜时产生的图像失真的电子束的倾斜角度调整和畸变调整是在金字塔形样品等特定的样品上进行的。 获取并处理倾斜之前和之后的图像以确定倾斜角度值和失真量。 根据预定的处理流程，自动地进行倾斜角调整和矫正矫正。
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公开(公告)号：US20050133718A1
公开(公告)日：2005-06-23
申请号：US10995388
申请日：2004-11-24
IPC分类号： G01B15/04 , G01N23/00 , G01N23/225 , H01J37/28
CPC分类号： H01J37/28 , G01B15/04 , G01N23/2251 , H01J2237/226 , H01J2237/2814
摘要： It is predicted that an observational direction (or an incident direction of an electron beam) in an observed image actually obtained has some errors compared to a set value. The error portion affects the analysis of the observed image later. Therefore, a convergent electron beam is irradiated on a specimen with a known shape, electrons discharged from the specimen surface are detected, an image of the electron is obtained, an incident direction of the convergent electron beam is estimated based on a geometric deformation on an image of the specimen with a known shape, and a 3D shape or a shape of a cross section of a specimen to be observed from a SEM image of the specimen to be observed is obtained by use of the information of the incident direction of the estimated convergent electron beam.
摘要翻译： 预测实际获得的观察图像中的观察方向（或电子束的入射方向）与设定值相比具有一些误差。 错误部分稍后影响观察图像的分析。 因此，会聚电子束被照射在具有已知形状的样本上，检测从试样表面排出的电子，获得电子的图像，基于上述几何变形来估计会聚电子束的入射方向 通过使用估计的样本的入射方向的信息，获得具有已知形状的样本的图像，以及待观察的样本的SEM图像将要观察的样本的3D形状或截面形状 会聚电子束。
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公开(公告)号：US07935927B2
公开(公告)日：2011-05-03
申请号：US12110443
申请日：2008-04-28
CPC分类号： H01J37/28 , G01B15/04 , G01N23/2251 , H01J2237/226 , H01J2237/2814
摘要： A method and device for observing a specimen, in which a convergent electron beam is irradiated and scanned from a desired direction, on a surface of a calibration substrate on which a pattern with a known shape is formed, and a beam SEM image of the pattern formed on the calibration substrate is obtained. An actual direction of the electron beam irradiated on the surface of the calibration substrate is calculated by use of the information about an apparent geometric deformation of the known shape on the SEM image, and the actual direction of the electron beam to the desired is adjusted direction by using information of the calculated direction. The pattern with the known shape formed on the calibration substrate has a crystal plane formed by anisotropic chemical etching.
摘要翻译： 一种用于观察其中从所需方向照射并扫描会聚电子束的样本在其上形成有已知形状的图案的校准基板的表面上的图案的束SEM扫描图像 形成在校准基板上。 通过使用关于SEM图像上的已知形状的表观几何变形的信息，计算照射在校准基板的表面上的电子束的实际方向，将电子束的实际方向调整为所需的调整方向 通过使用计算出的方向的信息。 在校准基板上形成的具有已知形状的图案具有由各向异性化学蚀刻形成的晶面。
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公开(公告)号：US20070114398A1
公开(公告)日：2007-05-24
申请号：US11651031
申请日：2007-01-09
IPC分类号： G01N23/00
CPC分类号： H01J37/28 , G01B15/04 , G01N23/2251 , H01J2237/226 , H01J2237/2814
摘要： A method and device for observing a specimen in which an electron beam is irradiated and scanned from an oblique direction, onto a surface of a calibration substrate on which a pattern with a known shape is formed, and an SEM image of the surface of the calibration substrate is obtained. An angle in an oblique direction of the electron beam irradiated is obtained and is adjusted to a desired angle. The electron beam is irradiated from the adjusted desired angle in the oblique direction, onto a specimen substrate on which a pattern is formed, and an SEM image of the specimen substrate is obtained. The SEM image of the specimen substrate is processed by use of the information of the desired angle, and a 3D image of the pattern on the specimen substrate or a shape of a cross section of the pattern is obtained.
摘要翻译： 一种用于观察其中电子束从倾斜方向照射和扫描的样本到其上形成有已知形状的图案的校准基板的表面上的方法和装置以及校准表面的SEM图像 得到底物。 获得照射的电子束的倾斜方向的角度并将其调节到期望的角度。 将电子束从倾斜方向的调整好的所需角度照射到形成图案的试样基板上，得到试样基板的SEM图像。 通过使用期望角度的信息来处理样本基板的SEM图像，并且获得样本基板上的图案的3D图像或图案的横截面的形状。
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公开(公告)号：US20060210143A1
公开(公告)日：2006-09-21
申请号：US11335515
申请日：2006-01-20
IPC分类号： G06K9/00
CPC分类号： H01J37/28 , H01J37/222 , H01J2237/226 , H01J2237/2611
摘要： In the past, when a shape was corrected by adjusting parameters of a shape calculating equation proper for a measuring method used in measuring a two-dimensional or three-dimensional shape by correlating the parameters and a shape index value, the degree of freedom of modifying a shape by correction depended on a model equation used in the calculation of the shape, and therefore such a shape correction method was unsuitable for objects of correction having a number of shape variations. According to the present invention, the three-dimensional shape is corrected by fitting a curvature equation to a three-dimensional shape of a semiconductor pattern measured by any three-dimensional shape measuring method and by adjusting parameters of the curvature equation based on a shape index value separately calculated. The relations between the shape index value and the parameters are stored in a data base, and at the time of measurement the measured shapes are corrected based on the relations mentioned above.
摘要翻译： 过去，当通过对参数和形状指标值进行关联来调整用于测量二维或三维形状的测量方法的形状计算方程的参数来校正形状时，修改自由度 通过校正的形状取决于在形状计算中使用的模型方程，因此这种形状校正方法不适合具有多个形状变化的校正对象。 根据本发明，通过将曲率方程拟合为通过任何三维形状测量方法测量的半导体图案的三维形状并且通过基于形状指数调整曲率方程的参数来校正三维形状 价值分别计算。 形状指标值与参数之间的关系存储在数据库中，在测量时，根据上述关系校正测量的形状。
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