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    ROLL-VORTEX PLASMA CHEMICAL VAPOR DEPOSITION SYSTEM
    22.
    发明申请
    ROLL-VORTEX PLASMA CHEMICAL VAPOR DEPOSITION SYSTEM 失效
    ROLL-VORTEX等离子体化学蒸气沉积系统

    公开(公告)号：US20060236933A1

    公开(公告)日：2006-10-26

    申请号：US11420429

    申请日：2006-05-25

    申请人： Marvin Keshner ,  Warren Jackson ,  Krzysztof Nauka

    发明人： Marvin Keshner ,  Warren Jackson ,  Krzysztof Nauka

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45502 ,  C23C16/4412 ,  C23C16/45578 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449

    摘要： A system comprises a processing chamber for maintaining a hydrogen plasma at low pressure. The processing chamber has a long, wide, thin geometry to favor deposition of thin-film silicon on sheet substrates over the chamber walls. The sheet substrates are moved through between ends. A pair of opposing radio frequency electrodes above and below the workpieces are electrically driven hard to generate a flat, pancaked plasma cloud in the middle spaces of the processing chamber. A collinear series of gas injector jets pointed slightly up on a silane-jet manifold introduce 100% silane gas at high velocity from the side in order to roll the plasma cloud in a coaxial vortex. A second such silane-jet manifold is placed on the opposite side and pointed slightly down to further help roll the plasma and maintain a narrow band of silane concentration. A silane-concentration monitor observes the relative amplitudes of the spectral signatures of the silane and the hydrogen constituents in the roll-vortex plasma and outputs a process control feedback signal that is used to keep the silane in hydrogen concentration at about 6-7%.

    摘要翻译： 一种系统包括用于在低压下维持氢等离子体的处理室。 处理室具有长的，宽的，薄的几何形状，以有利于在室壁上的薄片基材上沉积薄膜硅。 片材基片在两端之间移动。 在工件上方和下方的一对相对的射频电极被电驱动，以在处理室的中间空间中产生平坦的，扁平的等离子体云。 在硅烷喷射歧管上略微向上突出的共线系列气体喷射器喷嘴从侧面以高速度引入100％硅烷气体，以在同轴涡流中滚动等离子体云。 第二个这样的硅烷喷射歧管放置在相反的一侧并稍微向下倾斜，以进一步帮助滚动等离子体并保持窄的硅烷浓度带。 硅烷浓度监测器观察到辊涡流等离子体中硅烷和氢组分的光谱特征的相对振幅，并输出用于将硅烷在氢浓度中保持在约6-7％的过程控制反馈信号。

    Nanocrystal switch
    23.
    发明申请
    Nanocrystal switch 审中-公开
    纳米晶体开关

    公开(公告)号：US20060071205A1

    公开(公告)日：2006-04-06

    申请号：US10949038

    申请日：2004-09-24

    申请人： Krzysztof Nauka

    发明人： Krzysztof Nauka

    IPC分类号： H01L29/06

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L27/1292 ,  H01L29/04 ,  H01L29/0673 ,  H01L29/78648 ,  H01L29/78681 ,  H01L29/78696

    摘要： A switch comprises a set of electrodes with a nanocrystal channel disposed between the electrodes. The nanocrystal channel has bridges between conductive nanocrystals. A gate electrode is disposed above the nanocrystal channel and is insulated there from. Voltage applied to the gate can modulate electrical conductivity of the bridges between the nanocrystals, thus modulating current flowing between the electrodes.

    摘要翻译： 开关包括一组具有设置在电极之间的纳米晶体沟道的电极。 纳米晶体通道在导电纳米晶体之间具有桥连。 栅电极设置在纳米晶体通道上方并与之绝缘。 施加到栅极的电压可以调制纳米晶体之间的桥的导电性，从而调节在电极之间流动的电流。

    Method of making active matrix display
    29.
    发明授权
    Method of making active matrix display 失效
    制作有源矩阵显示的方法

    公开(公告)号：US07248306B2

    公开(公告)日：2007-07-24

    申请号：US10897533

    申请日：2004-07-23

    申请人： Frederick A. Perner ,  Krzysztof Nauka

    发明人： Frederick A. Perner ,  Krzysztof Nauka

    IPC分类号： G02F1/136

    CPC分类号： G02F1/1362 ,  G02F1/133305 ,  G02F1/1368 ,  G02F2001/136295

    摘要： A method of making a lower cost active matrix display. In a particular embodiment, the method includes providing at least one first conductor upon a substrate and depositing a gate dielectric upon the first conductor and substrate. At least one paired second conductor and a pixel electrode are deposited upon the gate dielectric, with the second conductor crossing the first conductor and with a narrow gap between the paired second conductor and the pixel electrode. A semiconductor material is deposited over the paired second conductor and pixel electrode, filling the narrow gap. The narrow gap shelters a portion of the semiconductor material, which serves as a semiconductor bridge capable of functioning either as an insulator or as a channel region of a field effect transistor. The remaining, unsheltered semiconductor material is removed. A liquid crystal layer is then deposited upon the paired second conductor, the pixel electrode and the sheltered semiconductor material, and a translucent conductor is deposited upon the liquid crystal display layer. An associated display is also provided.

    摘要翻译： 制作成本较低的有源矩阵显示的方法。 在特定实施例中，该方法包括在衬底上提供至少一个第一导体并在第一导体和衬底上沉积栅极电介质。 至少一对成对的第二导体和像素电极沉积在栅极电介质上，其中第二导体与第一导体交叉并且在成对的第二导体和像素电极之间具有窄间隙。 半导体材料沉积在成对的第二导体和像素电极上，填充窄间隙。 窄间隙避开半导体材料的一部分，其用作能够用作场效应晶体管的绝缘体或沟道区的半导体桥。 剩余的未加帽的半导体材料被去除。 然后将液晶层沉积在成对的第二导体，像素电极和遮蔽半导体材料上，并且半透明导体沉积在液晶显示层上。 还提供了相关联的显示。

    Assembly for material deposition
    30.
    发明申请
    Assembly for material deposition 有权
    装配材料沉积

    公开(公告)号：US20050093957A1

    公开(公告)日：2005-05-05

    申请号：US10954263

    申请日：2004-10-01

    申请人： Gary Gibson ,  Krzysztof Nauka ,  Chung Yang

    发明人： Gary Gibson ,  Krzysztof Nauka ,  Chung Yang

    IPC分类号： B05D1/04 ,  B05C5/00 ,  B05D3/00 ,  B41J2/02 ,  B41J2/07 ,  B41J2/09 ,  H05K3/12 ,  B41J11/00

    CPC分类号： B41J2/02 ,  B41J2/09 ,  H05K3/1241

    摘要： An assembly for depositing material onto a substrate includes a reservoir containing the material. The reservoir also includes a nozzle through which the material is jetted and formed into droplets. The droplets travel through flight paths prior to deposition onto the substrate. The assembly includes a charging ring for inducing an electrical charge to one or more of the droplets and a plurality of deflection plates for controlling the flight paths of the droplets. In addition, the assembly also includes a droplet manipulating device configured to manipulate the droplets at least one of during the flight paths and after deposition of the droplets onto the substrate.

    摘要翻译： 用于在衬底上沉积材料的组件包括容纳该材料的容器。 储存器还包括喷嘴，材料通过喷嘴喷射并形成液滴。 在沉积到基板上之前，液滴通过飞行路径行进。 该组件包括用于对一个或多个液滴引起电荷的充电环和用于控制液滴的飞行路径的多个偏转板。 另外，组件还包括液滴操纵装置，其被构造成在飞行路径期间和在将液滴沉积到基板上之后至少一个操纵液滴。