摘要:
Core voltage generator including a comparison unit configured to compare a reference voltage with a feedback core voltage to output a difference between the reference voltage and the feedback core voltage, an amplification unit configured to output a core voltage by amplifying an external power supply voltage according to an output signal of the comparison unit and a mute unit configured to maintain a voltage level of an output terminal of the amplification unit at a ground voltage level when the output of the core voltage is interrupted.
摘要:
A semiconductor device including a threshold voltage detector and a boosted voltage generating unit. The threshold voltage detector detects a threshold voltage level of cell transistors and outputs a detected threshold voltage level. The boosted voltage generating unit changes a target level of a boosted voltage in response to the detected threshold voltage level. The threshold voltage detector includes a detected current generating unit and a detected voltage generating unit. The detected current generating unit has a plurality of cell transistors in a cell array and generates a detected current whose amplitude varies corresponding to an average level of the threshold voltages of the cell transistors. The detected voltage generating unit generates the detected threshold voltage level whose level is determined corresponding to the amplitude of the detected current.
摘要:
A band-gap reference voltage generating apparatus is disclosed. The band-gap reference voltage generating apparatus according to the present invention includes an operational amplifier unit that is driven by a bias voltage and outputs an operational amplifying signal using a first voltage and a second voltage as input voltages; a voltage generating unit that generates the first voltage and the second voltage in response to the operational amplifying signal; a reference voltage generating unit that outputs a reference voltage in response to the operational amplifying signal; and a unit that feedbacks the reference voltage to generate as the bias voltage.
摘要:
An internal voltage generator supplies a stable internal voltage without increasing standby current. The internal voltage generator includes an internal voltage driver for supplying an internal voltage based on a control signal, a feedback circuit for supplying a feedback voltage having a voltage level proportional to the internal voltage, a control signal generating circuit for generating the control signal to control the internal voltage driver such that the feedback voltage is maintained at a desired reference voltage, an auxiliary driving circuit for additionally supplying the internal voltage in response to the control signal, and an auxiliary driving control circuit for activating the auxiliary driving circuit only when it is expected to dissipate a large amount of a current.
摘要:
An internal voltage generating circuit includes a divided voltage generator configured to generate a divided voltage by dividing a feedback internal voltage level at a division ratio corresponding to an operation mode control signal, a voltage detector configured to detect a level of the divided voltage based on a reference voltage level, an internal voltage generator configured to receive a supply voltage as power source and generate the internal voltage in response to an output signal of the voltage detector, and an under-driving unit configured to under-drive an internal voltage terminal to a supply voltage in an under-driving operation region that is determined in response to the operation mode control signal.
摘要:
A voltage supply apparatus includes a power noise sensing unit, a voltage selecting unit, a first power voltage supply unit and a second power voltage supply unit. The power noise sensing unit senses noise from first and second powers and outputs a power noise sensing signal. The voltage selecting unit outputs first and second driving signals in response to a voltage-supply-enable-signal and the power noise sensing signal. The first power voltage supply unit applies a voltage of the first power in response to the first and second driving signals. The second power voltage supply unit applies a voltage of the second power in response to the first and second driving signals.
摘要:
A power-up signal generating circuit includes a detecting unit configured to output a bias signal having a voltage level corresponding to an external power voltage in response to an internal voltage and a deep power down (DPD) signal; and a signal generating unit configured to generate a power-up signal having a logic level corresponding to the voltage level of the external power voltage in response to the DPD signal and the bias signal, wherein the internal voltage increases during an activation time of the power-up signal to reach a predetermined voltage level after a predetermined time, and maintains a ground voltage level during an inactivation period of the power-up signal.
摘要:
A pumping voltage detector includes a first division voltage generating unit for dividing a pumping voltage at a first division ratio to generate a first divided voltage, a second division voltage generating unit for dividing the pumping voltage at a second division ratio different from the first division ratio to generate a second divided voltage, and a detection signal generating unit for comparing one of the first and second divided voltages with a reference voltage to generate a pumping voltage detection signal.
摘要:
Core voltage generator including a comparison unit configured to compare a reference voltage with a feedback core voltage to output a difference between the reference voltage and the feedback core voltage, an amplification unit configured to output a core voltage by amplifying an external power supply voltage according to an output signal of the comparison unit and a mute unit configured to maintain a voltage level of an output terminal of the amplification unit at a ground voltage level when the output of the core voltage is interrupted.
摘要:
An internal voltage generation circuit of a semiconductor device includes: a voltage detecting unit configured to detect a voltage level of an internal voltage output terminal to output a voltage detection signal; an oscillating unit configured to generate a first oscillation signal having a predefined frequency in response to the voltage detection signal; and a pumping unit configured to perform a charge pumping operation in response to the first oscillation signal and the voltage detection signal to output an internal voltage to the internal voltage output terminal, a period of the charge pumping operation being limited within an activation period of the voltage detection signal.