公开(公告)号：US20020132101A1

公开(公告)日：2002-09-19

申请号：US10104749

申请日：2002-03-22

Applicant: The Penn State Research Foundation

Inventor： Stephen J. Fonash ,  Alikaan Kalkan ,  Sanghoon Bae

IPC: B32B003/26

CPC classification number: B81C1/0038 ,  B81C1/00047 ,  B81C2201/0115 ,  B81C2201/0139 ,  B81C2201/018 ,  C23C16/24 ,  C23C16/511 ,  G01N21/17 ,  G01N27/121 ,  G01N27/44717 ,  G01N30/6095 ,  H01J49/0418 ,  Y10T428/24174 ,  Y10T428/249953

Abstract: A novel porous film is disclosed comprising a network of silicon columns in a continuous void which may be fabricated using high density plasma deposition at low temperatures, i.e., less than about 250 null C. This silicon film is a two-dimensional nano-sized array of rodlike columns. This void-column morphology can be controlled with deposition conditions and the porosity can be varied up to 90%. The simultaneous use of low temperature deposition and etching in the plasma approach utilized, allows for the unique opportunity of obtaining columnar structure, a continuous void, and polycrystalline column composition at the same time. Unique devices may be fabricated using this porous continuous film by plasma deposition of this film on a glass, metal foil, insulator or plastic substrates.

Abstract translation: 公开了一种新颖的多孔膜，其包括在连续空隙中的硅柱网络，其可以在低温下（即小于约250℃）下使用高密度等离子体沉积来制造。该硅膜是二维纳米尺寸阵列 的棒状柱。 这种空隙柱形态可以用沉积条件控制，并且孔隙率可以变化高达90％。 在所采用的等离子体方法中同时使用低温沉积和蚀刻允许在同时获得柱状结构，连续空隙和多晶柱组成的独特机会。 可以使用这种多孔连续膜通过将该膜等离子体沉积在玻璃，金属箔，绝缘体或塑料基底上来制造独特的器件。