摘要:
Disclosed are chalcogenide nanomaterials, preferably metal chalcogenide nanomaterials, for example, copper, lead and/or silver chalcogenide nanomaterials. Also provided is a method or process of synthesizing or preparing a chalcogenide nanomaterial, preferably a metal chalcogenide nanomaterial. In an example, a wet-chemical method is used to prepare metal chalcogenide nanomaterials, preferably in a solvent and in the presence of one or more organic ligands. Another example method involves producing metal chalcogenide nanomaterial and includes the steps of forming a mixture of a metal precursor, a chalcogen-based ligand, a solvent and a chalcogen precursor, heating the mixture at a reaction temperature for a duration of reaction time, and separating a produced metal chalcogenide nanomaterial.
摘要:
The present invention relates to a thermoelectric composite material and a method for preparing a thermoelectric composite material. Specifically, the invention relates to a thermoelectric composite material in which graphene oxide attached with conductive metal nanoparticles is dispersed in a thermoelectric material and a method for preparing a thermoelectric composite powder comprising the steps of: growing conductive metal nanoparticles on the surface of graphene oxide (step 1); and introducing the graphene oxide attached with the conductive metal nanoparticles prepared in step 1 into a thermoelectric material precursor solution, followed by heat treatment (step 2).
摘要:
Discussed herein are systems and methods for fabrication of MgSnGe-based thermoelectric materials for applications from room temperature and near room temperature to high temperature applications. The TE materials may be fabricated by hand or ball milling a powder to a predetermined particle size and hot-pressing the milled powder to form a thermoelectric component with desired properties including a figure of merit (ZT) over a temperature range. The TE materials fabricated may be disposed in thermoelectric devices for varying applications.
摘要:
A process for manufacturing a nanocomposite thermoelectric material having a plurality of nanoparticle inclusions. The process includes determining a material composition to be investigated for the nanocomposite thermoelectric material, the material composition including a conductive bulk material and a nanoparticle material. In addition, a range of surface roughness values for the insulating nanoparticle material that can be obtained using current state of the art manufacturing techniques is determined. Thereafter, a plurality of Seebeck coefficients, electrical resistivity values, thermal conductivity values and figure of merit values as a function of the range of nanoparticle material surface roughness values is calculated. Based on these calculated values, a nanocomposite thermoelectric material composition or ranges of compositions is/are selected and manufactured.
摘要:
A thermoelectric pixel includes a micro-platform and a device layer having one or more support layers suspended at a perimeter thereof. The pixel includes structures which reduce thermal conductivity and improve platform planarity. In embodiments providing an infrared sensor, carbon nanotubes are used to enhance infrared absorption into the sensor pixel. In other embodiments, the pixel provides a thermoelectric energy harvester.
摘要:
A thermoelectric composite includes a plurality of particles comprising a crosslinked polymer having a heat deflection temperature greater than or equal to 200° F. and a segregated network comprising a first filler material which is disposed between the particles to produce a thermoelectric response in response to application of a voltage difference or temperature difference across the thermoelectric composite. The first filler material includes a carbon material, a metal, a metal disposed on a carbon material, or a combination thereof. A process for preparing a thermoelectric article includes combining a first filler material and a plurality of particles comprising a polymer to form a composition and molding the composition to form a thermoelectric article, wherein the thermoelectric article is configured to produce a thermoelectric response in response to application of a voltage difference or temperature difference across the article.
摘要:
The present invention provides a composite thermoelectric material. The composite thermoelectric material can include a semiconductor material comprising a rare earth metal. The atomic percent of the rare earth metal in the semiconductor material can be at least about 20%. The composite thermoelectric material can further include a metal forming metallic inclusions distributed throughout the semiconductor material. The present invention also provides a method of forming this composite thermoelectric material.
摘要:
A thermoelectric material includes a plurality of first semiconductor members having first band gap energy and a second semiconductor member having second band gap energy higher than the first band gap energy. The first semiconductor member and the second semiconductor member are alternately arranged in a direction of carrier transport. The first semiconductor member has a width in the direction of carrier transport not greater than 5 nm and a distance between two adjacent first semiconductor members in the direction of carrier transport is not greater than 3 nm.
摘要:
The present invention provides a method of preparing a nanocomposite thermoelectric material. The method includes heating a reaction mixture of a semiconductor material and a metal complex to a temperature greater than the decomposition temperature of the metal complex. The heating forms metallic inclusions having a size less than about 100 nm that are substantially evenly distributed throughout the semiconductor material forming the nanocomposite thermoelectric material. The present invention also provides a nanocomposite thermoelectric material prepared by this method.
摘要:
In order to provide a thermoelectric conversion element which has a high Seebeck coefficient, a low thermal conductivity, and a high performance, even if the material system that has a low environmental load and can reduce the cost is used, the thermoelectric conversion element in which lattice points are classified into two or more kinds (A site and B site), lattices of which the kinds are different are connected to each other, the numbers of lattices of which the kinds are different are different (A site: 2, and B site: 1), and a lattice structure is configured by arranging nanoparticles or semiconductor quantum dots, includes areas of which conductivity types are different.