Abstract:
A voltage regulator comprising a first power switch connected between the input terminal and output terminal; a storage condenser connected to the input terminal via a one-way switch; a second power switch connected between the condenser and the input terminal; and a regulating element connected to the output terminal and driving the power switches in such a manner as to maintain the output voltage constant. For better distributing electric and thermal stress and improving the reliability and working life of the regulator by reducing the interference caused by switching of the two power switches, a drive device is provided between the regulating element and the switches for detecting the input voltage and the voltage of the condenser, and keeping both switches on as long as the input voltage is above two given thresholds, turning off the second switch when the input voltage is higher than the condenser voltage and below the first threshold, and turning off the first switch when the input voltage is lower than the condenser voltage and below the second threshold.
Abstract:
An amplifier having a high input dynamic range as well as high CMRR and PSRR values and input impedance while using a single supply voltage, includes an input stage with two transistors which are biased by a constant current, preferably of less than 1 microampere, while the collectors of the transistors are kept at fixed reference voltages. The input signal applied between the emitters of the transistors is transferred to the terminals of a first resistor which is supplied with current from a circuit which mirrors the current into a second resistor, from the terminals of which the output signal is taken.The preferred application is for forming interfaces for lambda probes fitted to catalytic converters for motor vehicles.
Abstract:
The sense circuit, for recognizing the virgin or programmed status of cells in storage devices, comprises a differential amplifier having a first input connected to a number of selectable matrix cells, through a first uncoupling circuit, a second input connected to a number of selectable reference virgin cells through a second uncoupling circuit, respective matrix and reference load transistors connected between each input of the amplifier and a supply voltage, and a current generator connected in parallel to the matrix cells and controlled by the first input of the amplifier to draw a current equal to a predetermined fraction of the current flowing through said first input.
Abstract:
The device comprises a source bias generator suitable for conferring upon the EPROM cell during the reading step a source voltage that varies linearly with the power supply voltage so as to keep constant the voltage between gate and source of the above cell.
Abstract:
A control circuit is used for driving a multiphase brushless DC motor. The back emf of a non-excited winding is sensed, and a control signal is generated when a sinusoidal signal on the winding crosses a reference voltage level. Commutation occurs when the control signal is generated. Masking circuitry inhibits sensing of back emf immediately after commutation for a time period which is sufficient to ensure that noise from commutation spikes has ceased.
Abstract:
An improved planarity when forming contact plugs by a blanket CVD deposition of a metallic matrix layer followed by etchback is achieved by performing a first etchback step to expose the surface of the dielectric material underlying the filling metal layer, while masking the top of the metal plugs with resist caps. The resist caps are formed using a mask derived by field inversion and enlargement from the actual contact mask used for defining the contact areas. With the resist caps covering the contact plugs, the filling metallic material is overetched to eliminate residues along with discontinuities from the planarity of the surface, while shielding the top of the plugs from the overetch. The masked overetch is preferably conducted under conditions of reduced anisotropy and increased selectivity in respect to the first etchback step.
Abstract:
A table cloth matrix of EPROM memory cells comprises a semiconductor substrate, parallel source lines and drain lines, floating gate areas interposed in a checkerboard pattern between the source lines and the drain lines and control gate lines, parallel to one another and perpendicular to the source lines and to the drain lines. There are obtained in the semiconductor substrate extensive oxide areas, with which the floating gates are in contact by means of their asymmetrical lateral fin.
Abstract:
The generator of drive signals comprises a ramp generator suitable for receiving a square waveform input signal and for converting it into an output signal variable between a lower level and an upper level with upward and downward ramps having a preset slope, a first comparator with a non-inverting input connected to the output of said ramp generator and an inverting input connected to a first reference signal source and a second comparator with an inverting input connected to the output of said ramp generator and a non-inverting input connected to a second reference signal source.
Abstract:
The level detector comprises a first capacitance having a charge circuit including a first transistor controlled by the input signal to be detected (Vi) and a discharge circuit. A second capacitance has a charge circuit including a second transistor controlled by the input signal and a discharge circuit having at least one third transistor having pre-set electrical and geometrical characteristics. The above discharge circuits are connected to the respective inputs of a comparator whose output is representative of the difference between the maximum amplitude of the input signal and a reference level depending on said electrical and geometrical characteristics of said third transistor.
Abstract:
A circuit arrangement for enhancing the transconductance of a differential amplifier stage comprising a pair of MOS transistors, having respective source electrodes connected together through a circuit node, comprises a pair of active components respectively connected in each of the connections between the aforesaid electrodes and the aforesaid node and serving a characteristic function corresponding to that of a negative value resistor. This arrangement enables the transconductance of the differential stage to be increased while keeping the dissipated electric power low and the area occupied in an integrated circuit small.