Low-drop voltage regulator
    301.
    发明授权
    Low-drop voltage regulator 失效
    低压稳压器

    公开(公告)号:US5280233A

    公开(公告)日:1994-01-18

    申请号:US842294

    申请日:1992-02-26

    CPC classification number: G05F1/59 G05F1/569 H02J9/061 Y10T307/527 Y10T307/625

    Abstract: A voltage regulator comprising a first power switch connected between the input terminal and output terminal; a storage condenser connected to the input terminal via a one-way switch; a second power switch connected between the condenser and the input terminal; and a regulating element connected to the output terminal and driving the power switches in such a manner as to maintain the output voltage constant. For better distributing electric and thermal stress and improving the reliability and working life of the regulator by reducing the interference caused by switching of the two power switches, a drive device is provided between the regulating element and the switches for detecting the input voltage and the voltage of the condenser, and keeping both switches on as long as the input voltage is above two given thresholds, turning off the second switch when the input voltage is higher than the condenser voltage and below the first threshold, and turning off the first switch when the input voltage is lower than the condenser voltage and below the second threshold.

    Abstract translation: 一种电压调节器,包括连接在输入端子和输出端子之间的第一电源开关; 存储电容器,其通过单向开关连接到所述输入端子; 连接在电容器和输入端子之间的第二电源开关; 以及连接到输出端子并且以保持输出电压恒定的方式驱动电源开关的调节元件。 为了更好地分配电力和热应力,通过减少由两个电源开关切换引起的干扰,提高了稳压器的可靠性和使用寿命,驱动装置设置在调节元件和开关之间,用于检测输入电压和电压 并且只要输入电压高于两个给定阈值就保持两个开关接通,当输入电压高于冷凝器电压并低于第一阈值时关闭第二开关,并且当第二开关断开时,关闭第一开关 输入电压低于电容电压,低于第二阈值。

    Integrated instrumentation amplifier for below-ground inputs
    302.
    发明授权
    Integrated instrumentation amplifier for below-ground inputs 失效
    用于地下输入的集成仪表放大器

    公开(公告)号:US5276405A

    公开(公告)日:1994-01-04

    申请号:US919891

    申请日:1992-07-27

    CPC classification number: H03F3/45479 H03F3/45076 H03F2200/261

    Abstract: An amplifier having a high input dynamic range as well as high CMRR and PSRR values and input impedance while using a single supply voltage, includes an input stage with two transistors which are biased by a constant current, preferably of less than 1 microampere, while the collectors of the transistors are kept at fixed reference voltages. The input signal applied between the emitters of the transistors is transferred to the terminals of a first resistor which is supplied with current from a circuit which mirrors the current into a second resistor, from the terminals of which the output signal is taken.The preferred application is for forming interfaces for lambda probes fitted to catalytic converters for motor vehicles.

    Abstract translation: 具有高输入动态范围的放大器以及使用单电源电压时的高CMRR和PSRR值和输入阻抗,包括具有两个晶体管的输入级,其中两个晶体管被恒定电流偏置,优选小于1微安,而 晶体管的集电极保持在固定的参考电压。 施加在晶体管的发射极之间的输入信号被传送到第一电阻器的端子,该第一电阻器从从其输出信号的端子反射电流到第二电阻器的电路提供电流。 优选的应用是形成用于机动车辆的催化转化器的λ探针的界面。

    Sense circuit for storage devices such a non-volatile memories, with
enhanced sensing discrimination
    303.
    发明授权
    Sense circuit for storage devices such a non-volatile memories, with enhanced sensing discrimination 失效
    用于存储设备的感应电路,如非易失性存储器,具有增强的感测鉴别

    公开(公告)号:US5270590A

    公开(公告)日:1993-12-14

    申请号:US806118

    申请日:1991-12-12

    Applicant: Luigi Pascucci

    Inventor: Luigi Pascucci

    CPC classification number: G11C16/28 G11C7/14

    Abstract: The sense circuit, for recognizing the virgin or programmed status of cells in storage devices, comprises a differential amplifier having a first input connected to a number of selectable matrix cells, through a first uncoupling circuit, a second input connected to a number of selectable reference virgin cells through a second uncoupling circuit, respective matrix and reference load transistors connected between each input of the amplifier and a supply voltage, and a current generator connected in parallel to the matrix cells and controlled by the first input of the amplifier to draw a current equal to a predetermined fraction of the current flowing through said first input.

    Method for formation of contact plugs utilizing etchback
    306.
    发明授权
    Method for formation of contact plugs utilizing etchback 失效
    用于形成使用ETCHBACK的接触片的方法

    公开(公告)号:US5231051A

    公开(公告)日:1993-07-27

    申请号:US769600

    申请日:1991-10-01

    CPC classification number: H01L21/76879 H01L21/7684 Y10S438/963 Y10S438/976

    Abstract: An improved planarity when forming contact plugs by a blanket CVD deposition of a metallic matrix layer followed by etchback is achieved by performing a first etchback step to expose the surface of the dielectric material underlying the filling metal layer, while masking the top of the metal plugs with resist caps. The resist caps are formed using a mask derived by field inversion and enlargement from the actual contact mask used for defining the contact areas. With the resist caps covering the contact plugs, the filling metallic material is overetched to eliminate residues along with discontinuities from the planarity of the surface, while shielding the top of the plugs from the overetch. The masked overetch is preferably conducted under conditions of reduced anisotropy and increased selectivity in respect to the first etchback step.

    Table cloth matrix of EPROM memory cells with an asymmetrical fin
    307.
    发明授权
    Table cloth matrix of EPROM memory cells with an asymmetrical fin 失效
    具有不对称翅片的EPROM存储单元的表布矩阵

    公开(公告)号:US5196914A

    公开(公告)日:1993-03-23

    申请号:US753028

    申请日:1991-08-29

    Inventor: Stefano Mazzali

    CPC classification number: H01L27/115 G11C16/0416 H01L29/42376 H01L29/7885

    Abstract: A table cloth matrix of EPROM memory cells comprises a semiconductor substrate, parallel source lines and drain lines, floating gate areas interposed in a checkerboard pattern between the source lines and the drain lines and control gate lines, parallel to one another and perpendicular to the source lines and to the drain lines. There are obtained in the semiconductor substrate extensive oxide areas, with which the floating gates are in contact by means of their asymmetrical lateral fin.

    Abstract translation: EPROM存储单元的桌布矩阵包括半导体衬底,平行的源极线和漏极线,在源极线和漏极线之间的棋盘图案中插入的浮动栅极区域和控制栅极线彼此平行并垂直于源极 线路和排水管线。 在半导体衬底中获得了大量的氧化物区域,浮动栅极通过它们的非对称横向翅片与之接触。

    Integratable bipolar level detector for high-frequency sinusoidal signals
    309.
    发明授权
    Integratable bipolar level detector for high-frequency sinusoidal signals 失效
    用于高频SINUSOIDAL信号的可整合双极性检测器

    公开(公告)号:US5140185A

    公开(公告)日:1992-08-18

    申请号:US436777

    申请日:1989-11-15

    Applicant: Loic Lietar

    Inventor: Loic Lietar

    CPC classification number: H03K5/2418 G01R19/1658

    Abstract: The level detector comprises a first capacitance having a charge circuit including a first transistor controlled by the input signal to be detected (Vi) and a discharge circuit. A second capacitance has a charge circuit including a second transistor controlled by the input signal and a discharge circuit having at least one third transistor having pre-set electrical and geometrical characteristics. The above discharge circuits are connected to the respective inputs of a comparator whose output is representative of the difference between the maximum amplitude of the input signal and a reference level depending on said electrical and geometrical characteristics of said third transistor.

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