公开(公告)号：US07360760B2

公开(公告)日：2008-04-22

申请号：US11089313

申请日：2005-03-24

Applicant: Nien-Chin Lin

Inventor： Nien-Chin Lin

IPC: B65H1/00

CPC classification number: B65H1/04 ,  B41J13/103 ,  G03G15/6502 ,  G03G2215/00388

Abstract: A paper tray for use with a printer. The paper tray includes a sidewall, a door plate, a rotating member and a resilient element. The sidewall has a through hole. The door plate pivots on the sidewall and rotates around an X-axis. The rotating member is disposed in the through hole and pivots on the sidewall. The rotating member has an engagement portion and selectively rotates between a first position and a second position around a Y-axis. The resilient element is disposed between the rotating member and the sidewall, providing resilience to the rotating member to rotate to the first position. The rotating member rotates to the second position when exerted to overcome the resilience. The rotating member rotates to the first position by the resilience in the absence of external pressure, such that the engagement portion abuts the door plate.

Abstract translation: 用于打印机的纸盘。 纸盘包括侧壁，门板，旋转构件和弹性元件。 侧壁具有通孔。 门板在侧壁上枢转并围绕X轴旋转。 旋转构件设置在通孔中并且在侧壁上枢转。 旋转构件具有接合部分，并且围绕Y轴在第一位置和第二位置之间选择性地旋转。 弹性元件设置在旋转构件和侧壁之间，为旋转构件提供弹性以旋转到第一位置。 旋转构件当施加以旋转到第二位置以克服弹性时。 旋转构件在没有外部压力的情况下通过弹性旋转到第一位置，使得接合部邻接门板。

公开(公告)号：US07349243B2

公开(公告)日：2008-03-25

申请号：US11379527

申请日：2006-04-20

Applicant: Wen-Chin Lin ,  Denny Tang ,  Hsu-Chen Cheng

Inventor： Wen-Chin Lin ,  Denny Tang ,  Hsu-Chen Cheng

IPC: G11C11/00

CPC classification number: G11C11/16

Abstract: Disclosed herein are various embodiments of a 3-parameter switching technique for MRAM memory cells arranged on an MRAM array. The disclosed technique alters the relationship between the disturbance margin and write margin of MRAM arrays to reduce the overall disturbance for the arrays by either enlarging the write margin with respect to the original disturbance margin or enlarging the disturbance margin in view of the original write margin. In either approach, the disclosed 3-parameter switching technique successfully decreases the inadvertent writing of unselected bits.

Abstract translation: 这里公开了布置在MRAM阵列上的MRAM存储器单元的3参数切换技术的各种实施例。 所公开的技术改变MRAM阵列的扰动余量与写入余量之间的关系，以通过相对于原始干扰裕度放大写入裕度或者根据原始写入裕度来扩大扰动余量来减小阵列的整体干扰。 在任一方法中，所公开的3参数切换技术成功地减少了无选择位的无意写入。

公开(公告)号：USRE40138E1

公开(公告)日：2008-03-04

申请号：US10442631

申请日：2003-05-21

Applicant: Mu-Chi Chiang ,  Hsien-Chin Lin ,  Jiaw-Ren Shih

Inventor： Mu-Chi Chiang ,  Hsien-Chin Lin ,  Jiaw-Ren Shih

IPC: H01L21/336

CPC classification number: H01L29/6659 ,  H01L21/26506 ,  H01L21/823418 ,  H01L21/823468 ,  H01L29/6656

Abstract: A process for fabricating input/output, N channel, (I/O NMOS) devices, featuring an ion implanted nitrogen region, used to reduce hot carrier electron, (HEC), injection, has been developed. The process features implanting a nitorgen region, at the interface of an overlying silicon oxide layer, and an underlying lightly doped source/drain, (LDD), region. The implantation procedure can either be performed prior to, or after, the deposition of a silicon oxide liner layer, in both cases resulting in a desired nitrogen pile-up at the oxide-LDD interface, as well as resulting, in a more graded LDD profile. An increase in the time to fail, in regards to HCE injection, for these I/O NMOS devices, is realized, when compared to counterparts fabricated without the nitrogen implantation procedure.

Abstract translation: 已经开发了用于制造用于减少热载流子电子（HEC）注入的具有离子注入氮区域的输入/输出N沟道（I / O NMOS）器件的工艺。 该过程的特征是在覆盖的氧化硅层的界面和下面的轻掺杂源极/漏极（LDD）区域上注入nitorgen区域。 在两种情况下，在氧化硅衬垫层的沉积之前或之后，可以进行注入工艺，导致在氧化物 - LDD界面处产生所需的氮堆积，以及在较梯度的LDD 个人资料 当与没有氮气注入程序制造的对手相比时，实现了对于这些I / O NMOS器件，关于HCE注入的失败时间的增加。

公开(公告)号：US20070247900A1

公开(公告)日：2007-10-25

申请号：US11379527

申请日：2006-04-20

Applicant: Wen-Chin Lin ,  Denny Tang ,  H.C. Cheng

Inventor： Wen-Chin Lin ,  Denny Tang ,  H.C. Cheng

IPC: G11C11/14

CPC classification number: G11C11/16

Abstract: Disclosed herein are various embodiments of a 3-parameter switching technique for MRAM memory cells arranged on an MRAM array. The disclosed technique alters the relationship between the disturbance margin and write margin of MRAM arrays to reduce the overall disturbance for the arrays by either enlarging the write margin with respect to the original disturbance margin or enlarging the disturbance margin in view of the original write margin. In either approach, the disclosed 3-parameter switching technique successfully decreases the inadvertent writing of unselected bits.

Abstract translation: 这里公开了布置在MRAM阵列上的MRAM存储器单元的3参数切换技术的各种实施例。 所公开的技术改变MRAM阵列的扰动余量与写入余量之间的关系，以通过相对于原始干扰裕度放大写入裕度或者根据原始写入裕度来扩大扰动余量来减小阵列的整体干扰。 在任一方法中，所公开的3参数切换技术成功地减少了无选择位的无意写入。

公开(公告)号：USD552554S1

公开(公告)日：2007-10-09

申请号：US29270215

申请日：2006-12-19

Applicant: Kuo Chin Lin ,  Feng Zhu ,  Bo Liu

Designer： Kuo Chin Lin ,  Feng Zhu ,  Bo Liu

公开(公告)号：US20070205406A1

公开(公告)日：2007-09-06

申请号：US11746315

申请日：2007-05-09

Applicant: Chao-Hsiung Wang ,  Li-Shyue Lai ,  Denny Tang ,  Wen-Chin Lin

Inventor： Chao-Hsiung Wang ,  Li-Shyue Lai ,  Denny Tang ,  Wen-Chin Lin

IPC: H01L47/00

CPC classification number: H01L45/06 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675 ,  H01L45/1683

Abstract: A method of manufacturing a memory device is provided. The method includes forming an electrode over a substrate. The method also includes forming an opening in the electrode to provide a tapered electrode contact surface proximate the opening. The method further includes forming a phase change feature over the electrode and on the tapered electrode contact surface.

Abstract translation: 提供一种制造存储器件的方法。 该方法包括在衬底上形成电极。 该方法还包括在电极中形成开口以提供靠近开口的锥形电极接触表面。 该方法还包括在电极上和锥形电极接触表面上形成相变特征。

公开(公告)号：US20070155960A1

公开(公告)日：2007-07-05

申请号：US11452909

申请日：2006-06-15

Applicant: Wen-Chin Lin ,  Tzu-Kwei Sun ,  Jen-Fang Lin

Inventor： Wen-Chin Lin ,  Tzu-Kwei Sun ,  Jen-Fang Lin

IPC: C09D11/00 ,  C09B39/00

CPC classification number: C09D11/32 ,  C09B29/363

Abstract: The present invention discloses a yellow dye compound having a structure of the following formula (I): wherein M is H, Li, NH4 or Na. The dye compound of the present invention is particularly applied to yellow dye compound for paper-printing ink jet ink and can be made into yellow ink jet ink with greenish yellow, wide color gamut, and excellent solubility.

公开(公告)号：US07229883B2

公开(公告)日：2007-06-12

申请号：US11064132

申请日：2005-02-23

Applicant: Chao-Hsiung Wang ,  Li-Shyue Lai ,  Denny Tang ,  Wen-Chin Lin

Inventor： Chao-Hsiung Wang ,  Li-Shyue Lai ,  Denny Tang ,  Wen-Chin Lin

IPC: H01L21/336

CPC classification number: H01L45/06 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675 ,  H01L45/1683

Abstract: A method of manufacturing a memory device is provided. The method includes forming an electrode over a substrate. The method also includes forming an opening in the electrode to provide a tapered electrode contact surface proximate the opening. The method further includes forming a phase change feature over the electrode and on the tapered electrode contact surface.

Abstract translation: 提供一种制造存储器件的方法。 该方法包括在衬底上形成电极。 该方法还包括在电极中形成开口以提供靠近开口的锥形电极接触表面。 该方法还包括在电极上和锥形电极接触表面上形成相变特征。

公开(公告)号：US20070097750A1

公开(公告)日：2007-05-03

申请号：US11564887

申请日：2006-11-30

Applicant: Hitoshi SHIGA ,  Chih-Hung Wang ,  Chin Lin

Inventor： Hitoshi SHIGA ,  Chih-Hung Wang ,  Chin Lin

IPC: G11C11/34

CPC classification number: G11C16/344 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/16 ,  G11C2211/5621

Abstract: A semiconductor memory device includes a memory cell array, data buffer, and column switch. The data buffer senses the potential of a bit line to determine data in a selected memory cell and hold readout data in a read. The data buffer detects both whether the whole data buffer holds “0” data and whether the whole data buffer holds “1” data. The column switch selects part of the data buffer and connects the part to a bus.

Abstract translation: 半导体存储器件包括存储单元阵列，数据缓冲器和列开关。 数据缓冲器检测位线的电位以确定所选择的存储单元中的数据并保持读取中的读出数据。 数据缓冲器检测整个数据缓冲器是否保持“0”数据以及整个数据缓冲器是否保持“1”数据。 列开关选择数据缓冲区的一部分，并将部件连接到总线。

公开(公告)号：US20070096935A1

公开(公告)日：2007-05-03

申请号：US11276319

申请日：2006-02-24

Applicant: Hsin-Ta Lee ,  Ho-Chin Lin

Inventor： Hsin-Ta Lee ,  Ho-Chin Lin

IPC: G09F9/33

CPC classification number: H04M1/22 ,  H01H2219/038 ,  H01H2231/022

Abstract: A method of updating luminance of light emitting elements of a portable electronic device according to ambient light intensity sensed by image capturing units of the portable electronic device is proposed. The method includes sensing ambient light intensities using light sensors of the image capturing units, determining the luminance of the light emitting elements of the portable electronic device according to the ambient light intensities sensed by the light sensors of the image capturing units, controlling the light intensity of the light emitting elements of the portable electronic device according to the determined luminance.

Abstract translation: 提出了根据由便携式电子设备的图像捕获单元感测的环境光强度来更新便携式电子设备的发光元件的亮度的方法。 该方法包括使用图像捕获单元的光传感器感测环境光强度，根据由图像捕获单元的光传感器感测的环境光强度确定便携式电子设备的发光元件的亮度，控制光强度 的便携式电子设备的发光元件。