Abstract:
A timing control circuit for synchronizing an output clock signal with an input clock signal includes a pulse generator, a measure delay array, a measure circuit, and a forward delay array. The pulse generator is configured to receive a delay clock signal generated based on the input clock signal and generate a pulse, the pulse having a falling edge corresponding to a rising edge of the delay clock signal. The measure delay array is coupled to the pulse generator to receive the pulse. The measure circuit is configured to determine a position of the pulse within the measure delay array corresponding to a rising edge of the input clock signal. The forward delay array is configured to receive the input clock signal and delay the input clock signal based on the position determined by the measure circuit to generate the output clock signal. A method for synchronizing an output clock signal with an input clock signal includes receiving a delay clock signal generated based on the input clock signal. A pulse is generated having a falling edge corresponding to a rising edge of the delay clock signal. The pulse is propagated through a measure delay array. A position of the pulse within the measure delay array corresponding to a rising edge of the input clock signal is determined. The input clock signal is delayed based on the position determined by the measure circuit to generate the output clock signal.
Abstract:
A method and apparatus is provided for idling a clock synchronizing circuit during at least a portion of time during execution of a refresh operation in a memory device. In a memory device receiving an external clock signal, a method and apparatus for executing a refresh operation is provided that includes initiating at least one refresh operation in the memory device, and ceasing generation of an internal clock signal timed with respect to the external clock signal for at least a portion of the time in which at least one refresh operation takes to complete.
Abstract:
The present invention provides a system for stress testing an oxide structure to determine that structure's reliability in overstress conditions. The present invention provides an overstress test structure (400) that comprises a first transistor (406), having a first terminal coupled to ground, a second terminal coupled to a control signal (402), and a third terminal coupled to a first end of a first resistive element (412). A first voltage source (414) is coupled to the second end of the first resistive element. A second resistive element (416) is intercoupled between the second end of the first resistive element and ground. A second transistor (418) has a first terminal coupled to the second end of the first resistive element, a second terminal coupled to the first end of the first resistive element, and a third terminal coupled to a first node (420). A third resistive element (422) is intercoupled between the third terminal of the second transistor and ground; and a third transistor (424) has a first terminal coupled (426) to the oxide structure, a second terminal coupled to the first end of the first resistive elerment, and a third terminal coupled to a second voltage source (428).
Abstract:
The subject invention provides novel compositions of biologically active linderazulene terpene compounds which can advantageously be used for treating cancer and stopping cell proliferation.
Abstract:
The subject invention provides novel compositions of biologically active discorhabdin compounds which can advantageously be used for inhibiting pathological cellular proliferation. The compounds of the subject invention have utility for use in the treatment of cancer, including tumors.
Abstract:
The subject invention provides novel compositions of biologically active glycosylated pregnene compounds which can advantageously be used for treating cancer and stopping cell proliferation.
Abstract:
A method and apparatus to characterize a synchronous device after it is packaged. For synchronous devices, such as SDRAMs implementing a Delay Locked Loop (DLL) to synchronize one signal, such as an external clock signal with a second signal, such as a data signal, a counter is coupled to the phase detector of the DLL to track the entry point of the delay line. The entry point information can be taken over a variety of voltages, temperatures, and frequencies to characterize the DLL. The counter may be located on the synchronous device or external to the device.
Abstract:
A delay locked loop circuit includes a plurality of delay cells connected in series. Each of the delay cells connects to an input node which provides a clock signal. A shift register selects one of the delay cells to allow the clock signal to enter the selected delay cell and propagate to an output node, such that internal gates of delay cells preceding the selected delay cell are not toggling.
Abstract:
A switch mode controller circuit includes: a hysteretic comparator HYST_COMP for monitoring an output of a switch mode circuit; a standard comparator PHASE_COMP for monitoring a phase of the switch mode circuit; a logic block having a first input coupled to a clock signal generator Oscillator, a second input coupled to an output of the hysteretic comparator HYST_COMP, and a third input coupled to an output of the standard comparator PHASE_COMP, wherein the logic block generates switching cycles based on a fixed ON/OFF time during a first part of a cycle and based on a hysteretic control during a second part of the cycle.
Abstract:
The present invention relates to a reverse bias protection structure which comprises a PMOS transistor structure having a drain portion, a gate portion, a source portion and a backgate portion, wherein the gate portion is coupled to a first voltage potential, the source portion is selectively coupleable to a power supply, and the drain portion is selectively coupleable to a circuit needing power to be supplied thereto from the power supply. The reverse bias protection structure further comprises a Schottky diode structure having an anode coupled to the source portion of the PMOS transistor structure, and a cathode coupled to the backgate portion of the PMOS structure. Under forward bias conditions, the PMOS transistor conducts and exhibits a small voltage drop thereacross. Under reverse bias conditions, the PMOS transistor is off and the Schottky structure is reverse biased, thus preventing current through the protection structure.