公开(公告)号：US12068726B2

公开(公告)日：2024-08-20

申请号：US18297526

申请日：2023-04-07

Applicant: EPINOVATECH AB

Inventor： Martin Andreas Olsson

IPC: H03F3/187 ,  H03F3/195 ,  H03F3/24

CPC classification number: H03F3/245 ,  H03F3/195 ,  H03F2200/451

Abstract: There is provided a monolithic microwave integrated circuit, MMIC, front-end module which may include: a gallium nitride structure supported by a silicon substrate, a silicon-based transmit/receive switch having a transmit mode and a receive mode, a transmit amplifier configured to amplify an outgoing signal to be transmitted by said MMIC front-end module, wherein said transmit amplifier is electrically connected to said transmit/receive switch, wherein said transmit amplifier comprises a gallium nitride high-electron-mobility transistor, HEMT, formed in said gallium nitride structure. The MMIC front-end module may further include a receive amplifier configured to amplify an incoming signal received by said MMIC front-end module, wherein said receive amplifier is electrically connected to said transmit/receive switch, wherein said receive amplifier may include a gallium nitride HEMT formed in said gallium nitride structure.

公开(公告)号：US20240235412A1

公开(公告)日：2024-07-11

申请号：US18560299

申请日：2022-05-05

Applicant: Epinovatech AB

Inventor： Martin Andreas OLSSON ,  Andreas NORELIUS

IPC: H02M7/00 ,  H02M1/00 ,  H02M7/219 ,  H05K1/14

CPC classification number: H02M7/003 ,  H02M1/0077 ,  H02M7/219 ,  H05K1/144 ,  H05K2201/09209

Abstract: The present invention relates to a power converter device (1) comprising; a first circuit board (100), the first circuit board comprising a first driver (102) and at least four GaN HEMT devices (101) arranged in pairs (103, 104), said pairs connected in parallel; a second circuit board (200), the second circuit board comprising a second driver (202), and at least four MOSFET devices (201) arranged in pairs (203, 204), said pairs connected in parallel; the power converter device comprises at least two electrical connections (20) between the two circuit boards; wherein the first circuit board extends in a first plane and the second circuit board extends in a second plane, and the first and second circuit boards are arranged one above the other such that the two planes extends in parallel and the electrical connections between the two circuit boards extends in a direction substantially perpendicular to said first and second planes; and wherein said at least four GaN HEMT devices (101) are electrically connected equidistant to said first driver (102). The invention further relates to a system (2, 3) comprising such power converter device, and the use thereof.

公开(公告)号：US11695066B2

公开(公告)日：2023-07-04

申请号：US17806400

申请日：2022-06-10

Applicant: Epinovatech AB

Inventor： Martin Andreas Olsson

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/04 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205

CPC classification number: H01L29/7783 ,  H01L29/045 ,  H01L29/0676 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7789

Abstract: There is provided a semiconductor layer structure (100) comprising:



a Si substrate (102) having a top surface (104);
a first semiconductor layer (110) arranged on said substrate, the first semiconductor layer comprising a plurality of vertical nanowire structures (112) arranged perpendicularly to said top surface of said substrate, the first semiconductor layer comprising AlN;
a second semiconductor layer (120) arranged on said first semiconductor layer laterally and vertically enclosing said nanowire structures, the second semiconductor layer comprising AlxGa1-xN, wherein 0≤x≤0.95;
a third semiconductor layer (130) arranged on said second semiconductor layer, the third semiconductor layer comprising AlyGa1-yN, wherein 0≤y≤0.95; and
a fourth semiconductor layer (140) arranged on said third semiconductor layer, the fourth semiconductor layer comprising GaN.




There is also provided a high-electron-mobility transistor device and methods of producing such structures and devices.

公开(公告)号：US20230146820A1

公开(公告)日：2023-05-11

申请号：US17997915

申请日：2021-05-05

Applicant: Epinovatech AB

Inventor： Martin Andreas Olsson

IPC: H02K3/28 ,  H02K17/14 ,  H02P25/22 ,  H03B5/24

CPC classification number: H02K3/28 ,  H02K17/14 ,  H02P25/22 ,  H03B5/24 ,  H02P2207/01 ,  H02P2101/30

Abstract: There is provided an induction machine (100) comprising a rotor (120); a stator (140); and a phase-shift oscillator (160). The stator comprises: a first winding (141); and a second winding (142), arranged at a first angle (101) relative to said first winding. The phase-shift oscillator comprises: a transistor (170), the transistor (170) being a high-electron mobility transistor, HEMT; and a phase-shift network (180). The first winding is connected to a first node (181) of the phase-shift network and wherein the second winding is connected to a second node (182) of the phase-shift network, wherein the phase-shift oscillator is configured to provide a first phase electric signal at the first node and a second phase electric signal at the second node, wherein a difference between the first and second phase corresponds to the first angle. There is also provided an electric aircraft propulsion system comprising the induction machine.

公开(公告)号：US11634824B2

公开(公告)日：2023-04-25

申请号：US17835804

申请日：2022-06-08

Applicant: Epinovatech AB

Inventor： Martin Andreas Olsson

IPC: C25B1/04 ,  C25B9/23 ,  C25B11/049 ,  C25B11/046 ,  C25B9/50 ,  G01N27/414

Abstract: A device for performing electrolysis of water is disclosed. The device may include a semiconductor structure with a surface and an electron guiding layer below said surface, the electron guiding layer of the semiconductor structure being configured to guide electron movement in a plane parallel to the surface. The electron guiding layer of the semiconductor structure may include an InGaN quantum well or a heterojunction, the heterojunction being a junction between AlN material and GaN material or between AlGaN material and GaN material and at least one metal cathode arranged on the surface of the semiconductor structure. The device may further include at least one photoanode arranged on the surface of the semiconductor structure, wherein the at least one photoanode may include a plurality of quantum dots of InxGa(1-x)N material, wherein 0.4≤x≤1. A system including such a device is also disclosed.

公开(公告)号：US20220231298A1

公开(公告)日：2022-07-21

申请号：US17658603

申请日：2022-04-08

Applicant: Epinovatech AB

Inventor： Martin Andreas Olsson

IPC: H01M4/62 ,  H01M4/04 ,  H01M4/134 ,  H01M4/525 ,  H01M4/66

Abstract: This disclosure is directed toward a method for producing a solid-state battery layer structure. The method may include providing an anode layer comprising silicon, forming a plurality of nanowire structures including silicon and/or gallium nitride on the anode layer and depositing a solid electrolyte layer on the anode layer. In some examples, the method may also include depositing a cathode layer on the solid electrolyte layer, depositing a cathode current collector metal layer on the cathode layer, etching holes through the anode layer, filling the holes with an electrically conducting material; and depositing an anode current collector metal layer on a bottom surface of the anode layer.