公开(公告)号：US12148821B2

公开(公告)日：2024-11-19

申请号：US18321643

申请日：2023-05-22

Applicant: Epinovatech AB

Inventor： Martin Andreas Olsson

IPC: H01L29/20 ,  H01L29/04 ,  H01L29/06 ,  H01L29/205 ,  H01L29/66 ,  H01L29/778

Abstract: Apparatuses and methods relating to semiconductor layer structures are disclosed. A method for producing a semiconductor layer structure ay involve providing a Si substrate comprising a top surface, forming a first semiconductor layer on the substrate, the first semiconductor layer comprising a plurality of vertical nanowire structures, arranged perpendicularly to the top surface of the substrate, the first semiconductor layer comprising AlN, and epitaxially growing a second semiconductor layer which laterally and vertically encloses the plurality of vertical nanowire structures thereby encapsulating dislocations in shells around the nanowires, wherein the second semiconductor layer comprises AlxGa1-xN, wherein 0≤x≤0.95.

公开(公告)号：US12027989B2

公开(公告)日：2024-07-02

申请号：US17755142

申请日：2020-10-22

Applicant: Epinovatech AB

Inventor： Martin Andreas Olsson

IPC: H02M3/158 ,  B60L50/60 ,  B60L53/24 ,  H01L29/778 ,  H02J7/02 ,  H02M1/00 ,  H02M7/06 ,  H02M7/21 ,  H02M7/217 ,  H03K17/10 ,  H03K17/16

CPC classification number: H02M7/217 ,  B60L50/60 ,  B60L53/24 ,  H01L29/778 ,  H02J7/02 ,  H02M1/0048 ,  H02M3/158 ,  H02M7/06 ,  H02M7/21 ,  H03K17/102 ,  H03K17/163 ,  B60L2210/30 ,  B60L2210/40 ,  H01M2220/20 ,  H01M2220/30 ,  H02M1/0045 ,  H02M1/007

Abstract: There is provided an AC-DC converter circuit (100) for high power charging of an electrical battery. The circuit comprises an input rectifier comprising a first node and a second node. The input rectifier (110) is configured to receive an AC voltage at the first node (112) and provide a rectified voltage at the second node (114). The circuit further comprises a first transistor (120), comprising a first gate node (122), a first source node (124), and a first drain node (126). The first drain node is connected to the second node of the input rectifier. The first gate node is connected to a ground node (170). The circuit further comprises a second transistor (130), comprising a second gate node (132), a second source node (134), and a second drain node (136). The second drain node is connected to the first source node. The second transistor materially corresponds to the first transistor. The circuit further comprises a duty cycle control unit (140) connected to the second gate node for providing the second transistor with a switching waveform. The circuit further comprises an output rectifier (150) connected to the second source node or the first source node. The circuit further comprises an output electronic filter (160) connected to the second source node or an output node (151) of the output rectifier. An AC-DC converter device, a method for charging an electrical battery, and a regenerative braking system is also provided.

公开(公告)号：US20220302293A1

公开(公告)日：2022-09-22

申请号：US17806400

申请日：2022-06-10

Applicant: Epinovatech AB

Inventor： Martin Andreas Olsson

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/20 ,  H01L29/04 ,  H01L29/66 ,  H01L29/06

Abstract: There is provided a semiconductor layer structure (100) comprising: a Si substrate (102) having a top surface (104); a first semiconductor layer (110) arranged on said substrate, the first semiconductor layer comprising a plurality of vertical nanowire structures (112) arranged perpendicularly to said top surface of said substrate, the first semiconductor layer comprising AlN; a second semiconductor layer (120) arranged on said first semiconductor layer laterally and vertically enclosing said nanowire structures, the second semiconductor layer comprising AlxGa1-xN, wherein 0≤x≤0.95; a third semiconductor layer (130) arranged on said second semiconductor layer, the third semiconductor layer comprising AlyGa1-yN, wherein 0≤y≤0.95; and a fourth semiconductor layer (140) arranged on said third semiconductor layer, the fourth semiconductor layer comprising GaN. There is also provided a high-electron-mobility transistor device and methods of producing such structures and devices.

公开(公告)号：US20210265632A1

公开(公告)日：2021-08-26

申请号：US17302907

申请日：2021-05-14

Applicant: Epinovatech AB

Inventor： Martin Andreas Olsson

IPC: H01M4/62 ,  H01M4/525 ,  H01M4/134 ,  H01M4/66 ,  H01M4/04

Abstract: There is provided a solid-state battery layer structure which may include an anode current collector metal layer, an anode layer arranged on the anode current collector metal layer, a solid electrolyte layer arranged on the anode layer laterally, a cathode layer arranged on the solid electrolyte layer, and a cathode current collector metal layer, and a plurality of nanowire structures comprising silicon and/or gallium nitride, wherein said nanowire structures are arranged on the anode layer and, wherein said nanowire structures are laterally and vertically enclosed by the solid electrolyte layer, wherein the anode layer comprises silicon and a plurality of metal vias connecting the plurality of nanowire structures with the anode current collector metal layer. Methods for producing solid-state battery layer structures are also provided.

公开(公告)号：US20240356456A1

公开(公告)日：2024-10-24

申请号：US18761211

申请日：2024-07-01

Applicant: Epinovatech AB

Inventor： Martin Andreas Olsson

IPC: H02M7/217 ,  B60L50/60 ,  B60L53/24 ,  H01L29/778 ,  H02J7/02 ,  H02M1/00 ,  H02M3/158 ,  H02M7/06 ,  H02M7/21 ,  H03K17/10 ,  H03K17/16

CPC classification number: H02M7/217 ,  B60L50/60 ,  B60L53/24 ,  H01L29/778 ,  H02J7/02 ,  H02M1/0048 ,  H02M3/158 ,  H02M7/06 ,  H02M7/21 ,  H03K17/102 ,  H03K17/163 ,  B60L2210/30 ,  B60L2210/40 ,  H01M2220/20 ,  H01M2220/30 ,  H02M1/0045 ,  H02M1/007

Abstract: There is provided an AC-DC converter circuit (100) for high power charging of an electrical battery. The circuit comprises an input rectifier comprising a first node and a second node. The input rectifier (110) is configured to receive an AC voltage at the first node (112) and provide a rectified voltage at the second node (114). The circuit further comprises a first transistor (120), comprising a first gate node (122), a first source node (124), and a first drain node (126). The first drain node is connected to the second node of the input rectifier. The first gate node is connected to a ground node (170). The circuit further comprises a second transistor (130), comprising a second gate node (132), a second source node (134), and a second drain node (136). The second drain node is connected to the first source node. The second transistor materially corresponds to the first transistor. The circuit further comprises a duty cycle control unit (140) connected to the second gate node for providing the second transistor with a switching waveform. The circuit further comprises an output rectifier (150) connected to the second source node or the first source node. The circuit further comprises an output electronic filter (160) connected to the second source node or an output node (151) of the output rectifier. An AC-DC converter device, a method for charging an electrical battery, and a regenerative braking system is also provided.

公开(公告)号：US20240250686A1

公开(公告)日：2024-07-25

申请号：US18629267

申请日：2024-04-08

Applicant: Epinovatech AB

Inventor： Martin Andreas Olsson

IPC: H03K19/17728 ,  H03K19/17736 ,  H03K19/1776

CPC classification number: H03K19/17728 ,  H03K19/17744 ,  H03K19/1776

Abstract: There is provided a field-programmable gate array, FPGA, device (100) comprising a configurable logic block, CLB, (110) comprising a logic inverter (120) comprising a high-electron-mobility transistor, HEMT, (130), wherein the HEMT comprises: a Si substrate (384); an AlyGay-1N layer structure (380), wherein 0

公开(公告)号：US11955972B2

公开(公告)日：2024-04-09

申请号：US17905908

申请日：2021-03-10

Applicant: Epinovatech AB

Inventor： Martin Andreas Olsson

IPC: H03K19/17728 ,  H03K19/17736 ,  H03K19/1776

CPC classification number: H03K19/17728 ,  H03K19/17744 ,  H03K19/1776

Abstract: There is provided a field-programmable gate array, FPGA, device (100) comprising a configurable logic block, CLB, (110) comprising a logic inverter (120) comprising a high-electron-mobility transistor, HEMT, (130), wherein the HEMT comprises: a Si substrate (384); an AlyGay-1N layer structure (380), wherein 0

公开(公告)号：US20230327009A1

公开(公告)日：2023-10-12

申请号：US18321643

申请日：2023-05-22

Applicant: Epinovatech AB

Inventor： Martin Andreas Olsson

IPC: H01L29/20 ,  H01L29/778 ,  H01L29/06 ,  H01L29/66 ,  H01L29/04 ,  H01L29/205

CPC classification number: H01L29/7783 ,  H01L29/045 ,  H01L29/0676 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7789

Abstract: Apparatuses and methods relating to semiconductor layer structures are disclosed. A method for producing a semiconductor layer structure ay involve providing a Si substrate comprising a top surface, forming a first semiconductor layer on the substrate, the first semiconductor layer comprising a plurality of vertical nanowire structures, arranged perpendicularly to the top surface of the substrate, the first semiconductor layer comprising AIN, and epitaxially growing a second semiconductor layer which laterally and vertically encloses the plurality of vertical nanowire structures thereby encapsulating dislocations in shells around the nanowires, wherein the second semiconductor layer comprises AlxGa1-xN, wherein 0:x:0.95.

公开(公告)号：US11652454B2

公开(公告)日：2023-05-16

申请号：US17807677

申请日：2022-06-17

Applicant: EPINOVATECH AB

Inventor： Martin Andreas Olsson

IPC: H03F3/187 ,  H03F3/24 ,  H03F3/195

CPC classification number: H03F3/245 ,  H03F3/195 ,  H03F2200/451

Abstract: There is provided a monolithic microwave integrated circuit, MMIC, front-end module (100) comprising:



a gallium nitride structure (110) supported by a silicon substrate (120);
a silicon-based transmit/receive switch (130) having a transmit mode and a receive mode;
a transmit amplifier (112) configured to amplify an outgoing signal to be transmitted by said MMIC front-end module, wherein said transmit amplifier is electrically connected (132) to said transmit/receive switch, wherein said transmit amplifier comprises a gallium nitride high-electron-mobility transistor, HEMT, (114) formed in said gallium nitride structure; and
a receive amplifier (113) configured to amplify an incoming signal received by said MMIC front-end module, wherein said receive amplifier is electrically connected (133) to said transmit/receive switch, wherein said receive amplifier comprises a gallium nitride HEMT (115) formed in said gallium nitride structure.

公开(公告)号：US20250081501A1

公开(公告)日：2025-03-06

申请号：US18951447

申请日：2024-11-18

Applicant: Epinovatech AB

Inventor： Martin Andreas Olsson

IPC: H01L29/778 ,  H01L29/04 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66

Abstract: Apparatuses and methods relating to semiconductor layer structures are disclosed. A method for producing a semiconductor layer structure ay involve providing a Si substrate comprising a top surface, forming a first semiconductor layer on the substrate, the first semiconductor layer comprising a plurality of vertical nanowire structures, arranged perpendicularly to the top surface of the substrate, the first semiconductor layer comprising AlN, and epitaxially growing a second semiconductor layer which laterally and vertically encloses the plurality of vertical nanowire structures thereby encapsulating dislocations in shells around the nanowires, wherein the second semiconductor layer comprises AlxGa1-xN, wherein 0≤x≤0.95.