摘要:
An organic EL device includes a first substrate and a plurality of organic EL elements above a first portion of the first substrate. A first inorganic layer covers the plurality of organic EL elements. An active layer is above a second portion of the first substrate that is different than the first portion. The active layer comprises a material that is at least one of hygroscopic and oxidizable. A second inorganic layer covers the active layer. A second substrate is opposite the first substrate, with the plurality of organic EL elements being between the first and second substrates. A seal extends between the first and second substrates to define a sealed space between the first and second substrates. The second inorganic layer includes through-holes that expose the active layer to the sealed space that is defined by the first substrate, the second substrate, and the seal.
摘要:
An image forming apparatus includes an image forming section that forms a toner image. A transferring section transfers the toner image formed onto a recording medium. A fixing unit is located adjacent the image forming section such that a first space is defined between the fixing unit and the image forming section. The fixing unit fixes the toner image on the recording medium. An air-chamber includes a wind exit and discharges the air through the wind exit such that the air flows into the first space. An air-propelling device propels the air to discharge through the wind exit.
摘要:
Methods deposit a film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. Flows of first precursor deposition gases are provided to the substrate processing chamber. A first high-density plasma is formed from the flows of first deposition gases to deposit a first portion of the film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components until after the gap has closed. A sufficient part of the first portion of the film is etched back to reopen the gap. Flows of second precursor deposition gases are provided to the substrate processing chamber. A second high-density plasma is formed from the flows of second precursor deposition gases to deposit a second portion of the film over the substrate and within the reopened gap with a second deposition process that has simultaneous deposition and sputtering components.
摘要:
An insulating film is formed of a carbon-containing silicon dioxide film on a semiconductor substrate. In the insulating film, an interconnect groove is formed. A silicon dioxide layer with a density high enough to allow almost no oxygen to pass therethrough is formed on the bottom and side faces of the interconnect groove. And a metal interconnect is formed on the silicon dioxide layer inside the interconnect groove.
摘要:
An insulating film is formed of a carbon-containing silicon dioxide film on a semiconductor substrate. In the insulating film, an interconnect groove is formed. A silicon dioxide layer with a density high enough to allow almost no oxygen to pass therethrough is formed on the bottom and side faces of the interconnect groove. And a metal interconnect is formed on the silicon dioxide layer inside the interconnect groove.
摘要:
The present invention provides a light-weight and luxury facing for seat which hardly gives rise to folding wrinkles when it is applied to one surface of a cushion constituting a seat; the facing for seat composed of the lamination of a surface material made of fabrics, a flexible cellular plastic middle layer, and a backing, in which the backing is made of a low friction synthetic resin, preferably the backing is coated with a coating agent, particularly preferably said coating agent is prepared from an oxidized polyethylene wax latex or polyvinylidene chloride or ethylene-vinyl acetate copolymer latex or mixture thereof.