公开(公告)号：US07498268B2

公开(公告)日：2009-03-03

申请号：US11552129

申请日：2006-10-23

申请人： Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom K. Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh N. Pham ,  Zhong Qiang Hua

发明人： Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom K. Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh N. Pham ,  Zhong Qiang Hua

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/67017 ,  H01L21/67109

摘要： The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.

摘要翻译： 本发明旨在改善半导体处理系统中的缺陷性能。 在具体实施例中，用于处理半导体衬底的设备包括限定其中的处理区域的腔室和设置在腔室中以支撑半导体衬底的衬底支撑件。 至少一个喷嘴延伸到室中以通过喷嘴开口将工艺气体引入室中。 该装置包括至少一个隔热罩，每个隔热罩设置在至少一个喷嘴之一的至少一部分周围。 隔热罩具有向喷嘴的喷嘴开口向远侧突出的延伸部分，其包括用于工艺气体从喷嘴开口流过的隔热开口。 隔热罩降低了处理室中的喷嘴的温度，用于将工艺气体引入其中以减少颗粒。

公开(公告)号：US20070062449A1

公开(公告)日：2007-03-22

申请号：US11595642

申请日：2006-11-08

申请人： Hemant Mungekar ,  Muhammad Rasheed ,  Narendra Dubey

发明人： Hemant Mungekar ,  Muhammad Rasheed ,  Narendra Dubey

IPC分类号： H05H1/24 ,  C23C14/32 ,  C23C16/00 ,  C23F1/00

CPC分类号： H01J37/321 ,  C23C16/507

摘要： Embodiments in accordance with the present invention relate to techniques for enhancing uniformity of plasma-based semiconductor processing. In one technique, the exterior of a plasma-based processing chamber features a series of substantially continuous plates composed of a material exhibiting a low permeability to magnetic fields. This high-μ shielding material is utilized to block exposure of a plasma within the chamber to the effects of external magnetic fields. Embodiments in accordance with the present invention are effective to shield plasma-based processing chambers from external magnetic fields originating from adjacent clustered chambers, and/or from the earth's geomagnetic field.

摘要翻译： 根据本发明的实施例涉及用于增强基于等离子体的半导体处理的均匀性的技术。 在一种技术中，基于等离子体的处理室的外部具有由表现出对磁场的低磁导率的材料组成的一系列基本上连续的板。 该高μ屏蔽材料用于阻挡室内的等离子体暴露于外部磁场的影响。 根据本发明的实施例有效地将基于等离子体的处理室与源自相邻聚集室和/或来自地球的地磁场的外部磁场进行屏蔽。

公开(公告)号：US20050260356A1

公开(公告)日：2005-11-24

申请号：US10847922

申请日：2004-05-18

申请人： Hemant Mungekar ,  Bikram Kapoor ,  Zhuang Li

发明人： Hemant Mungekar ,  Bikram Kapoor ,  Zhuang Li

IPC分类号： C23C16/00 ,  C23C16/40 ,  C23C16/44 ,  H01L21/316

CPC分类号： H01L21/02274 ,  C23C16/402 ,  C23C16/4401 ,  H01L21/02164 ,  H01L21/02211

摘要： A film is deposited over a substrate by flowing a process gas to a process chamber and flowing a fluent gas to the process chamber. The process gas includes a silicon-containing gas and an oxygen-containing gas. The fluent gas includes a flow of helium and a flow of molecular hydrogen, the flow of molecular hydrogen being provided at a flow rate less than 20% of a flow rate of the helium. A plasma is formed in the process chamber with a density greater than 1011 ions/cm3. The film is deposited over the substrate with the plasma.

摘要翻译： 通过将处理气体流动到处理室并将流动气体流动到处理室，将膜沉积在基板上。 工艺气体包括含硅气体和含氧气体。 流体气体包括氦气流和分子氢气流，分子氢的流量以小于氦气流速的20％的流量提供。 在处理室中形成等离子体，其密度大于10 11离子/ cm 3。 该膜用等离子体沉积在衬底上。

公开(公告)号：US07141138B2

公开(公告)日：2006-11-28

申请号：US10630989

申请日：2003-07-28

申请人： Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom K. Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh N. Pham ,  Zhong Qiang Hua

发明人： Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom K. Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh N. Pham ,  Zhong Qiang Hua

IPC分类号： H01L21/306 ,  C23C16/00 ,  C23F1/00

CPC分类号： H01L21/67017 ,  H01L21/67109

摘要： The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.

公开(公告)号：US20050282398A1

公开(公告)日：2005-12-22

申请号：US10870232

申请日：2004-06-16

申请人： Hemant Mungekar ,  Young Lee ,  Manoj Vellaikal ,  Karen Greig ,  Bikram Kapoor

发明人： Hemant Mungekar ,  Young Lee ,  Manoj Vellaikal ,  Karen Greig ,  Bikram Kapoor

IPC分类号： C23C16/40 ,  C23C16/455 ,  C23C16/505 ,  H01L21/00 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/469

CPC分类号： H01L21/02164 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/505 ,  H01L21/02274 ,  H01L21/31612

摘要： Methods are provided for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A process gas having a silicon-containing gas, an oxygen-containing gas, and a fluent gas is flowed into the substrate processing chamber. The fluent gas is introduced into the substrate processing chamber at a flow rate of at least 500 sccm. A plasma is formed having an ion density of at least 1011 ions/cm3 from the process gas to deposit a first portion of the silicon oxide film over the substrate and into the gap. Thereafter, the deposited first portion is exposed to an oxygen plasma having at least 1011 ions/cm3. Thereafter, a second portion of the silicon oxide film is deposited over the substrate and into the gap.

摘要翻译： 提供了用于在设置在基板处理室中的基板上沉积氧化硅膜的方法。 基板在相邻的凸起表面之间形成间隙。 具有含硅气体，含氧气体和流动气体的工艺气体流入基板处理室。 将流体气体以至少500sccm的流量引入基板处理室。 形成等离子体，其具有距工艺气体至少10×10 11 / cm 3以上的离子密度，以将氧化硅膜的第一部分沉积在衬底上并且进入 差距。 此后，将沉积的第一部分暴露于具有至少10×10 11 / cm 3以上的氧等离子体。 此后，氧化硅膜的第二部分沉积在衬底上并进入间隙。

公开(公告)号：US20100051085A1

公开(公告)日：2010-03-04

申请号：US12549291

申请日：2009-08-27

申请人： Timothy W. Weidman ,  Charles Gay ,  Hsiu-Wu (Jason) Guo ,  Rohit Mishra ,  Kapila P. Wijekoon ,  Hemant Mungekar

发明人： Timothy W. Weidman ,  Charles Gay ,  Hsiu-Wu (Jason) Guo ,  Rohit Mishra ,  Kapila P. Wijekoon ,  Hemant Mungekar

IPC分类号： H01L31/042 ,  H01L31/18

CPC分类号： H01L31/022441 ,  H01L31/02245 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/547

摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. Methods of forming the high efficiency solar cell may include the use of a prefabricated back plane that is bonded to the metalized solar cell device to form an interconnected solar cell module. Solar cells most likely to benefit from the invention including those having active regions comprising single or multicrystalline silicon with both positive and negative contacts on the rear side of the cell.

摘要翻译： 本发明的实施例考虑使用新颖的处理顺序形成高效太阳能电池来形成太阳能电池装置。 形成高效率太阳能电池的方法可以包括使用结合到金属化太阳能电池器件的预制背板来形成互连的太阳能电池模块。 最有可能受益于本发明的太阳能电池，包括那些具有活性区域的太阳能电池，所述活性区域包括在电池背面具有正触点和负极的单晶硅或多晶硅。

公开(公告)号：US20070048446A1

公开(公告)日：2007-03-01

申请号：US11552129

申请日：2006-10-23

申请人： Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh Pham ,  Zhong Hua

发明人： Sudhir Gondhalekar ,  Padmanabhan Krishnaraj ,  Tom Cho ,  Muhammad Rasheed ,  Hemant Mungekar ,  Thanh Pham ,  Zhong Hua

IPC分类号： C23C16/00 ,  B05D3/00

CPC分类号： H01L21/67017 ,  H01L21/67109

摘要： The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.

摘要翻译： 本发明旨在改善半导体处理系统中的缺陷性能。 在具体实施例中，用于处理半导体衬底的设备包括限定其中的处理区域的腔室和设置在腔室中以支撑半导体衬底的衬底支撑件。 至少一个喷嘴延伸到室中以通过喷嘴开口将工艺气体引入室中。 该装置包括至少一个隔热罩，每个隔热罩设置在至少一个喷嘴之一的至少一部分周围。 隔热罩具有向喷嘴的喷嘴开口向远侧突出的延伸部分，其包括用于工艺气体从喷嘴开口流过的隔热开口。 隔热罩降低了处理室中的喷嘴的温度，用于将工艺气体引入其中以减少颗粒。

公开(公告)号：US20060292894A1

公开(公告)日：2006-12-28

申请号：US11166357

申请日：2005-06-24

申请人： Manoj Vellaikal ,  Hemant Mungekar ,  Young Lee ,  Yasutoshi Okuno ,  Hiroshi Yuasa

发明人： Manoj Vellaikal ,  Hemant Mungekar ,  Young Lee ,  Yasutoshi Okuno ,  Hiroshi Yuasa

IPC分类号： H01L21/31

CPC分类号： H01L21/31612 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274

摘要： Methods deposit a film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. Flows of first precursor deposition gases are provided to the substrate processing chamber. A first high-density plasma is formed from the flows of first deposition gases to deposit a first portion of the film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components until after the gap has closed. A sufficient part of the first portion of the film is etched back to reopen the gap. Flows of second precursor deposition gases are provided to the substrate processing chamber. A second high-density plasma is formed from the flows of second precursor deposition gases to deposit a second portion of the film over the substrate and within the reopened gap with a second deposition process that has simultaneous deposition and sputtering components.

摘要翻译： 方法在设置在基板处理室中的基板上沉积膜。 基板在相邻的凸起表面之间形成间隙。 将第一前体沉积气体的流动提供给基板处理室。 由第一沉积气体流形成第一高密度等离子体，以在第一沉积工艺和第二沉积工艺之后，在第一沉积工艺之后在膜上沉积薄膜的第一部分，直到间隙闭合为止。 将膜的第一部分的足够部分回蚀刻以重新打开间隙。 向基板处理室提供第二前体沉积气体的流动。 第二高密度等离子体由第二前体沉积气体的流形成，以便在具有同时沉积和溅射部件的第二沉积工艺的基础上并在重新打开的间隙内沉积膜的第二部分。