公开(公告)号：US07385260B2

公开(公告)日：2008-06-10

申请号：US10830390

申请日：2004-04-21

申请人： Hyung-Shin Kwon ,  Joon-Yong Joo ,  Kwang-Ok Koh ,  Sung-Bong Kim

发明人： Hyung-Shin Kwon ,  Joon-Yong Joo ,  Kwang-Ok Koh ,  Sung-Bong Kim

IPC分类号： H01L29/861

CPC分类号： H01L29/66507 ,  H01L21/28052 ,  H01L21/28518 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66545

摘要： The present invention provides a semiconductor device having a silicide thin film and method of forming the same. A semiconductor device comprises a gate insulation layer formed on an active region of a semiconductor substrate. A gate electrode is formed on the gate insulation layer. An impurity region is formed in the active region adjacent the gate electrode. A silicide thin film such as a cobalt silicide thin film is formed to a thickness of less than approximately 200 Å in the impurity region.

摘要翻译： 本发明提供一种具有硅化物薄膜的半导体器件及其形成方法。 半导体器件包括形成在半导体衬底的有源区上的栅极绝缘层。 在栅极绝缘层上形成栅电极。 在与栅电极相邻的有源区中形成杂质区。 诸如硅化钴薄膜的硅化物薄膜在杂质区域中形成为小于约200埃的厚度。

公开(公告)号：US20070152936A1

公开(公告)日：2007-07-05

申请号：US11448109

申请日：2006-06-07

申请人： Hyung Shin ,  Hong Kim

发明人： Hyung Shin ,  Hong Kim

IPC分类号： G09G3/36

CPC分类号： G09G3/3648 ,  G09G3/3655 ,  G09G2300/0814 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2320/0219 ,  G09G2320/0247

摘要： A liquid crystal display device is divided into a display region and a non-display region. A first thin film transistor is formed in each pixel region of the display region, and a second thin film transistor is formed in the non-display region. The first thin film transistor is a switch for controlling the supply of a data voltage to the pixel region, and the second thin film transistor is a switch for controlling the supply of a common voltage to the pixel region. The first thin film transistor has the same parasitic capacitance as that of the second thin film transistor. Accordingly, the flicker or image-sticking can be prevented. Also, the aperture ratio of each pixel region can be improved.

摘要翻译： 液晶显示装置分为显示区域和非显示区域。 在显示区域的每个像素区域中形成第一薄膜晶体管，并且在非显示区域中形成第二薄膜晶体管。 第一薄膜晶体管是用于控制对像素区域的数据电压的供给的开关，第二薄膜晶体管是用于控制向像素区域提供公共电压的开关。 第一薄膜晶体管具有与第二薄膜晶体管相同的寄生电容。 因此，可以防止闪烁或图像粘附。 此外，可以提高每个像素区域的开口率。

公开(公告)号：US06635539B2

公开(公告)日：2003-10-21

申请号：US10131418

申请日：2002-04-22

申请人： Hyung-Shin Kwon ,  Do-Hyung Kim

发明人： Hyung-Shin Kwon ,  Do-Hyung Kim

IPC分类号： H01L21336

CPC分类号： H01L29/66507 ,  H01L29/66545

摘要： A method for fabricating a MOS transistor using a self-aligned silicide technique is provided. The method includes forming a gate electrode and a silicidation resistant layer pattern that are sequentially stacked on a predetermined region of a semiconductor substrate. Impurities are implanted into the semiconductor substrate to form a source/drain region. A first metal silicide layer is selectively formed on the surface of the source/drain region. The silicidation resistant layer pattern is then removed to expose the gate electrode. A second metal silicide layer is selectively formed on the exposed gate electrode. Consequently, the first metal silicide layer can be formed of a metal silicide layer having superior tolerance with respect to junction spiking. Also, the second metal silicide layer can be formed of another metal silicide layer having a low variation of resistivity due to the variation of the line width of the gate electrode. Therefore, it is possible to fabricate a high-performance MOS transistor suitable for a highly integrated semiconductor device.