公开(公告)号：US20080121959A1

公开(公告)日：2008-05-29

申请号：US11946467

申请日：2007-11-28

申请人： Kazutoshi Izumi

发明人： Kazutoshi Izumi

IPC分类号： H01L29/94 ,  H01L21/00

CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L28/57

摘要： The embodiments discussed herein reduce, in a semiconductor device having a ferroelectric capacitor, the film thickness of an interlayer insulation film covering the ferroelectric capacitor without degrading yield, and reduce the invasion of water into the ferroelectric capacitor. A semiconductor device includes a first interlayer insulation film formed on a substrate, a ferroelectric capacitor formed on the first interlayer insulation film, a second interlayer insulation film formed on the first interlayer insulation film so as to cover the ferroelectric capacitor, and a hydrogen barrier film formed on the second interlayer insulation film, the ferroelectric capacitor is formed of a lower electrode, a ferroelectric film formed on the lower electrode, an upper electrode formed on the ferroelectric film in contact therewith, and a polish-resistant film formed on the upper electrode, wherein the second interlayer insulation film covers the polish-resistant film with a film thickness of 50-100 nm.

摘要翻译： 这里讨论的实施例在具有铁电电容器的半导体器件中减少覆盖铁电体电容器的层间绝缘膜的膜厚而不降低产率，并且减少水侵入铁电电容器。 半导体器件包括形成在基板上的第一层间绝缘膜，形成在第一层间绝缘膜上的铁电电容器，形成在第一层间绝缘膜上以覆盖铁电电容器的第二层间绝缘膜，以及氢阻挡膜 形成在第二层间绝缘膜上的铁电电容器由下电极，形成在下电极上的强电介质膜，形成在与其接触的铁电体膜上的上电极和形成在上电极上的耐光膜形成 其特征在于，所述第二层间绝缘膜覆盖所述耐光泽膜，膜厚为50〜100nm。

公开(公告)号：US07364964B2

公开(公告)日：2008-04-29

申请号：US11133267

申请日：2005-05-20

申请人： Kazutoshi Izumi

发明人： Kazutoshi Izumi

IPC分类号： H01L21/8242

CPC分类号： H01L21/02197 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/31604 ,  H01L21/31691 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76837 ,  H01L27/11502 ,  H01L27/11507

摘要： A highly reliable semiconductor device having a ferroelectric capacitor structure by sufficiently preventing the H2 attack without damaging the function of an interlayer insulating film covering interconnections and the like to obtain a high capacitor performance. The position of a semiconductor substrate mounted on and secured to a substrate support plate in an HDP-CVD system is adjusted in the vertical direction, whereby a second HDP-CVD oxide film is deposited so that voids are formed between aluminum interconnections at lower positions than the height of the aluminum interconnections.

摘要翻译： 具有铁电电容器结构的高度可靠的半导体器件，通过充分防止H 2 2攻击而不损害层间绝缘膜覆盖互连等的功能，以获得高电容器性能。 在HDP-CVD系统中安装并固定到基板支撑板上的半导体基板的位置在垂直方向上被调整，由此沉积第二HDP-CVD氧化物膜，使得在较低位置的铝互连之间形成空隙， 铝互连的高度。