公开(公告)号：US20120051169A1

公开(公告)日：2012-03-01

申请号：US12958233

申请日：2010-12-01

Applicant: Ki Hoon LEE

Inventor： Ki Hoon LEE

IPC: G11C7/00

CPC classification number: G11C11/40618

Abstract: Disclosed is a refresh control circuit for activating a plurality of bank selection signals in response to a refresh command signal. Each of the plurality of bank selection signals is assigned to one of a plurality of bank groups. The refresh control circuit is configured to activate the plurality of bank selection signals when a refresh cycle selection signal is deactivated, and activate a part of the plurality of bank selection signals when the refresh cycle selection signal is activated.

Abstract translation: 公开了一种刷新控制电路，用于响应刷新命令信号激活多个存储体选择信号。 多个存储体选择信号中的每一个被分配给多个存储体组中的一个。 刷新控制电路被配置为当刷新周期选择信号被去激活时激活多个存储体选择信号，并且当刷新周期选择信号被激活时激活多个存储体选择信号的一部分。

公开(公告)号：US20110027976A1

公开(公告)日：2011-02-03

申请号：US12936563

申请日：2009-04-16

Applicant: Ki-Hoon Lee ,  Jung-Wook Lee ,  Dong-Ho You

Inventor： Ki-Hoon Lee ,  Jung-Wook Lee ,  Dong-Ho You

IPC: H01L21/20

CPC classification number: C23C16/305 ,  C23C16/042 ,  C23C16/45527

Abstract: The present invention concerns a method of forming a chalcogenide thin film for a phase-change memory. In the method of forming a chalcogenide thin film according to the present invention, a substrate with a pattern formed is loaded into a reactor, and a source gas is supplied onto the substrate. Here, the source gas includes at least one source gas selected from germanium (Ge) source gas, gallium (Ga) source gas, indium (In) source gas, selenium (Se) source gas, antimony (Sb) source gas, tellurium (Te) source gas, tin (Sn) source gas, silver (Ag) source gas, and sulfur (S) source gas. A first purge gas is supplied onto the substrate in order to purge the source gas supplied onto the substrate, a reaction gas for reducing the source gas is then supplied onto the substrate, and a second purge gas is supplied onto the substrate in order to purge the reaction gas supplied onto the substrate. At least one operation, namely changing the supply time of the first purge gas and/or adjusting the internal pressure of the reactor is performed in such a way as to ensure that the deposition rate at an inner portion of the pattern is greater than the deposition rate at an upper portion of the pattern. According to the present invention, it is possible to form a chalcogenide thin film having an excellent gap-fill property by changing the purge time of the source gas or adjusting the internal pressure of the reactor in such a way as to ensure that the film forming rate at the inner portion of the pattern is greater than the film forming rate at the upper portion of the pattern.

Abstract translation: 本发明涉及一种形成用于相变存储器的硫族化物薄膜的方法。 在根据本发明的形成硫族化物薄膜的方法中，将形成有图案的基板装载到反应器中，并将源气体供应到基板上。 这里，源气体包括选自锗（Ge）源气体，镓（Ga）源气体，铟（In）源气体，硒（Se）源气体，锑（Sb）源气体，碲（ Te）源气体，锡（Sn）源气体，银（Ag）源气体和硫（S）源气体。 为了清洗供给到基板上的源气体，将第一吹扫气体供给到基板上，然后将用于还原原料气体的反应气体供给到基板上，向基板供给第二吹扫气体以便吹扫 供给到基板上的反应气体。 执行至少一种操作，即改变第一吹扫气体的供应时间和/或调节反应器的内部压力，以确保图案内部的沉积速率大于沉积物的沉积速率 速率在图案的上部。 根据本发明，可以通过改变源气体的吹扫时间或调节反应器的内部压力来形成具有优异间隙填充性质的硫族化物薄膜，以确保成膜 在图案的内部的速率大于图案上部的成膜速率。

公开(公告)号：US20100286207A1

公开(公告)日：2010-11-11

申请号：US12839874

申请日：2010-07-20

Applicant: Yung Hee KHO ,  Gyoon Hee HAN ,  Ho Jae LEE ,  Bum Woo PARK ,  Hyo Kon CHUN ,  Hwan Mook KIM ,  Song Kyu PARK ,  Sang Bae HAN ,  Dong Kyu RYU ,  Tae Gyu CHUN ,  Jin Ha LEE ,  Chang Woo LEE ,  Ki Hoon LEE ,  Hee Yoon LEE

Inventor： Yung Hee KHO ,  Gyoon Hee HAN ,  Ho Jae LEE ,  Bum Woo PARK ,  Hyo Kon CHUN ,  Hwan Mook KIM ,  Song Kyu PARK ,  Sang Bae HAN ,  Dong Kyu RYU ,  Tae Gyu CHUN ,  Jin Ha LEE ,  Chang Woo LEE ,  Ki Hoon LEE ,  Hee Yoon LEE

IPC: A61K31/4436 ,  A61P29/00 ,  A61P19/02 ,  C07D207/38 ,  A61K31/4015 ,  C07D409/06 ,  A61K31/4025 ,  A61K31/4412 ,  C07D211/86

CPC classification number: C07D207/26 ,  C07D207/38 ,  C07D211/86 ,  C07D409/06

Abstract: The present invention is related to new 2-oxo-cyclic compound, the process for preparing them and a pharmaceutical composition comprising the same. The present invention provides a pharmaceutical composition for preventing and treating the inflammatory disease comprising the pain or inflammation caused by rheumatic disease, for example, rheumatoid arthritis, spondyloarthopathies, gout, osteoarthritis, systemic lupus erythematosus and juvenile arthritis, and inflammatory syndrome for example, from myositis, gingivitis, synovitis, ankylosing spondylitis, burstitis, burns and scar, inflammatory Crohn's disease, Types I diabetes. therefore, it can be used as the therapeutics for treating and preventing inflammatory diseases.

Abstract translation: 本发明涉及新的2-氧代环状化合物，其制备方法和包含其的药物组合物。 本发明提供了用于预防和治疗炎性疾病的药物组合物，其包括由风湿性疾病引起的疼痛或炎症，例如类风湿性关节炎，脊椎动物病变，痛风，骨关节炎，系统性红斑狼疮和幼年关节炎以及炎性综合征，例如， 肌炎，牙龈炎，滑膜炎，强直性脊柱炎，爆发性炎症，烧伤和瘢痕，炎性克罗恩病，I型糖尿病。 因此，它可以用作治疗和预防炎性疾病的治疗剂。

公开(公告)号：US07803656B2

公开(公告)日：2010-09-28

申请号：US12301071

申请日：2007-05-18

Applicant: Yu-Min Jung ,  Ki-Hoon Lee

Inventor： Yu-Min Jung ,  Ki-Hoon Lee

IPC: H01L21/06

CPC classification number: H01L45/1233 ,  C23C16/305 ,  C23C16/505 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1616

Abstract: Provided is a method of depositing a chalcogenide film for phase-change memory. When the chalcogenide film for phase-change memory is deposited through a method using plasma such as plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD), a plasma reaction gas including He is used such that the crystallinity of the chalcogenide film is adjusted and the grain size and morphology of the deposited film are adjusted.

Abstract translation: 提供了一种沉积用于相变存储器的硫族化物膜的方法。 当通过诸如等离子体增强化学气相沉积（PECVD）或等离子体增强原子层沉积（PEALD）的等离子体的方法沉积用于相变存储器的硫族化物膜时，使用包括He的等离子体反应气体，使得 调整硫属化物膜并调节沉积膜的晶粒尺寸和形态。

公开(公告)号：US20090093083A1

公开(公告)日：2009-04-09

申请号：US12301071

申请日：2007-05-18

Applicant: Yu-Min Jung ,  Ki-Hoon Lee

Inventor： Yu-Min Jung ,  Ki-Hoon Lee

IPC: H01L21/02

CPC classification number: H01L45/1233 ,  C23C16/305 ,  C23C16/505 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1616

Abstract: Provided is a method of depositing a chalcogenide film for phase-change memory. When the chalcogenide film for phase-change memory is deposited through a method using plasma such as plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD), a plasma reaction gas including He is used such that the crystallinity of the chalcogenide film is adjusted and the grain size and morphology of the deposited film are adjusted.

Abstract translation: 提供了一种沉积用于相变存储器的硫族化物膜的方法。 当通过诸如等离子体增强化学气相沉积（PECVD）或等离子体增强原子层沉积（PEALD）的等离子体的方法沉积用于相变存储器的硫族化物膜时，使用包括He的等离子体反应气体，使得 调整硫属化物膜并调节沉积膜的晶粒尺寸和形态。

公开(公告)号：US20090090384A1

公开(公告)日：2009-04-09

申请号：US12301051

申请日：2007-01-22

Applicant: Dong-Ho You ,  Ki-Hoon Lee ,  Yu-Min Jung

Inventor： Dong-Ho You ,  Ki-Hoon Lee ,  Yu-Min Jung

IPC: C25F3/12

CPC classification number: C23C16/4405

Abstract: Provided is a cleaning method of an apparatus for depositing a metal containing film using a metal organic (MO) source. A fluorine (F)-containing gas and a carbon (C)-eliminating gas are supplied to a reactor of the apparatus so that in-situ cleaning can be performed. A solid by-product is not generated in the method, and after a predetermined quantity of wafers is processed, in-situ cleaning can be performed without exposing the reactor to the air such that productivity of the apparatus is maximized.

Abstract translation: 提供一种使用金属有机（MO）源沉积含金属膜的设备的清洁方法。 将含氟（F）的气体和碳（C） - 还原气体供给到设备的反应器中，从而可以进行原位清洗。 在该方法中不产生固体副产物，并且在处理了预定量的晶片之后，可以进行原位清洁而不将反应器暴露在空气中，使得装置的生产率最大化。