HEATER FOR DEPOSITING THIN FILM
    1.
    发明申请
    HEATER FOR DEPOSITING THIN FILM 审中-公开
    用于沉积薄膜的加热器

    公开(公告)号:US20070151517A1

    公开(公告)日:2007-07-05

    申请号:US11564554

    申请日:2006-11-29

    CPC classification number: C23C16/4586 C23C14/50 C23C16/46

    Abstract: A heater for depositing a thin film to deposit a thin film on a seated wafer by heating is provided. The heater for depositing a thin film includes: a wafer supporting plate on which a wafer is seated and a plurality of injection holes are disposed at the edge of the wafer supporting plate and in which a heat generating member is included; a shaft disposed at the lower side of the wafer supporting plate which comprises an inert gas pathway through which inert gas is provided; and a flow channel forming cover bonded to the lower part of the wafer supporting plate, and comprising an inner space formed between the flow channel forming cover and the wafer supporting plate, wherein the injection holes and the inert gas pathway are connected via the inner space.

    Abstract translation: 提供一种用于沉积薄膜以通过加热将薄膜沉积在就座晶片上的加热器。 用于沉积薄膜的加热器包括:晶片支撑板,晶片在其上就座,并且多个喷射孔设置在晶片支撑板的边缘处,并且其中包括发热元件; 设置在晶片支撑板的下侧的轴,其包括惰性气体通道,惰性气体通过该惰性气体通道提供; 以及流路形成盖,其结合到所述晶片支撑板的下部,并且包括形成在所述流路形成盖和所述晶片支撑板之间的内部空间,其中所述喷射孔和所述惰性气体通路经由所述内部空间 。

    REFRESH CONTROL CIRCUIT AND SEMICONDUCTOR MEMORY APPARATUS USING THE SAME
    3.
    发明申请
    REFRESH CONTROL CIRCUIT AND SEMICONDUCTOR MEMORY APPARATUS USING THE SAME 有权
    使用相同的刷新控制电路和半导体存储器

    公开(公告)号:US20120051169A1

    公开(公告)日:2012-03-01

    申请号:US12958233

    申请日:2010-12-01

    Applicant: Ki Hoon LEE

    Inventor: Ki Hoon LEE

    CPC classification number: G11C11/40618

    Abstract: Disclosed is a refresh control circuit for activating a plurality of bank selection signals in response to a refresh command signal. Each of the plurality of bank selection signals is assigned to one of a plurality of bank groups. The refresh control circuit is configured to activate the plurality of bank selection signals when a refresh cycle selection signal is deactivated, and activate a part of the plurality of bank selection signals when the refresh cycle selection signal is activated.

    Abstract translation: 公开了一种刷新控制电路,用于响应刷新命令信号激活多个存储体选择信号。 多个存储体选择信号中的每一个被分配给多个存储体组中的一个。 刷新控制电路被配置为当刷新周期选择信号被去激活时激活多个存储体选择信号,并且当刷新周期选择信号被激活时激活多个存储体选择信号的一部分。

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