Abstract:
A plasma electrodeless lamp comprises a substantially hollow metallic body, closely receiving two coupling elements, the first coupling element connected to the output of an RF amplifier, and the second coupling element connected to the input of an RF amplifier. The first coupling element is conductively connected (grounded) to metallic lamp body at its top surface, while the second coupling element is not. The lamp further comprises a vertical metallic post, the post being grounded to the metallic lamp body at the post's bottom surface. The lamp further comprises a dielectric sleeve which closely receives the metallic post, and which is in turn closely supported by the lamp body or alternatively or in combination a tuning stub. The lamp further comprises a bulb that is closely received by the metallic post, and that encloses a gas-fill which forms a radiant plasma when excited.
Abstract:
Described is a plasma electrode-less lamp. The device comprises an electromagnetic resonator and an electromagnetic radiation source conductively connected with the electromagnetic resonator. The device further comprises a pair of field probes, the field probes conductively connected with the electromagnetic resonator. A gas-fill vessel is formed from a closed, transparent body, forming a cavity. The gas-fill vessel is not contiguous with (detached from) the electromagnetic resonator and is capacitively coupled with the field probes. The gas-fill vessel further contains a gas within the cavity, whereby the gas is induced to emit light when electromagnetic radiation from the electromagnetic radiation source resonates inside the electromagnetic resonator, the electromagnetic resonator capacitively coupling the electromagnetic radiation to the gas, which becomes a plasma and emits light.
Abstract:
Described is a plasma electrode-less lamp. The device comprises an electromagnetic resonator and an electromagnetic radiation source conductively connected with the electromagnetic resonator. The device further comprises a pair of field probes, the field probes conductively connected with the electromagnetic resonator. A gas-fill vessel is formed from a closed, transparent body, forming a cavity. The gas-fill vessel is not contiguous with (detached from) the electromagnetic resonator and is capacitively coupled with the field probes. The gas-fill vessel further contains a gas within the cavity, whereby the gas is induced to emit light when electromagnetic radiation from the electromagnetic radiation source resonates inside the electromagnetic resonator, the electromagnetic resonator capacitively coupling the electromagnetic radiation to the gas, which becomes a plasma and emits light.
Abstract:
A Double Heterojunction Bipolar Transistor (DHBT) is disclosed employing a collector of InP, an emitter of InP or other material such as InAlAs, and a base of either a selected InxGa1−xAsySb1−y compound, which preferably is lattice-matched to InP or may be somewhat compressively strained thereto, or of a superlattice which mimics the selected InGaAsSb compound. When an emitter having a conduction band non-aligned with that of the base is used, such as InAlAs, the base-emitter junction is preferably graded using either continuous or stepped changes in bulk material, or using a chirped superlattice. Doping of the junction may include one or more delta doping layer to improve the shift of conduction band discontinuities provided by a grading layer, or to permit a wider depletion region.
Abstract translation:公开了使用InP的集电极,InP的发射极或诸如InAlAs的其它材料的双异质结双极晶体管(DHBT),以及选择的In x Ga 1-x As y Sb 1-y化合物的碱,其优选与InP或 可能有些压缩应变,或模拟所选InGaAsSb化合物的超晶格。 当使用具有与碱的不对准的导带的发射体(例如InAlAs)时,基极 - 发射极结优选地使用块状材料的连续或阶梯变化或使用啁啾超晶格进行分级。 结的掺杂可以包括一个或多个δ掺杂层,以改善由分级层提供的导带不连续性的偏移,或者允许更宽的耗尽区。
Abstract:
A highly uniform, planar and high speed JHEMT-HBT MMIC is fabricated using a single growth process. A multi-layer structure including a composite emitter-channel layer, a base-gate layer and a collector layer is grown on a substrate. The composite emitter-channel layer includes a sub-emitter/channel layer that reduces the access resistance to the HBT's emitter and the JHEMT's channel, thereby improving the HBT's high frequency performance and increasing the JHEMT's current gain. The multi-layer structure is then patterned and metallized to form an HBT collector contact, planar HBT base and JHEMT gate contacts, and planar HBT emitter and JHEMT source and drain contacts.
Abstract:
A plasma lamp apparatus includes a post structure with a material overlying a surface region of the post structure, which has a first end and a second end. The apparatus also has a helical coil structure configured along the post structure. The apparatus includes a bulb with a fill material capable of emitting electromagnetic radiation. A resonator coupling element configured to feed radio frequency energy to at least the helical coil causes the bulb device to emit electromagnetic radiation.
Abstract:
An RF electrodeless plasma lamp with improved efficiency in higher lumens per watt includes a waveguide body, in which an RF signal drives the entire structure at the resonant frequency of the structure. The resonant frequency of the structure is lowered by increasing the overall capacitance of the waveguide body by adding at least two layers of dielectric material between the input feed and the bulb of the lamp. The layered structure can include an air cavity disposed between a dielectric layer and the input feed. In lowering the resonant frequency of the lamp, the device is capable of using RF amplifiers that have higher efficiency, and thus has a higher lumens per watt ratio.
Abstract:
A plasma lamp apparatus that includes an improved bulb support assembly to increase the lumens per watt output of the apparatus. The bulb support assembly includes a support structure that forms a cavity for receiving the bulb. The bulb is supported within the cavity though a protrusion that extends out from the support structure in a curved manner. By created a curved protrusion, the electric field within the resonating structure of the lamp apparatus is lowered. Lowering the electric field leads to lower resonating frequencies of the resonating structure. In lowering the resonating frequency, the resonating structure is driven to resonate at lower power levels, thereby increasing the lumens per watt output of the lamp apparatus.
Abstract:
An optical waveguide system with an electrodeless plasma lamp as the electromagnetic radiation source. The system includes an optic source coupling element that receives the electromagnetic radiation that is emitted from at least one electrodeless plasma lamp. The optic source coupling element is coupled to at least one optical waveguide element. The optical waveguide element includes at least one fiber optic cable that is capable of transmitting the emitted electromagnetic radiation. The fiber optic cable can be positioned such that the electromagnetic radiation is transmitted at a desired position away from the electrodeless plasma lamp source.