公开(公告)号：US20080182393A1

公开(公告)日：2008-07-31

申请号：US12023480

申请日：2008-01-31

申请人： Edwin L. Piner ,  John C. Roberts ,  Pradeep Rajagopal

发明人： Edwin L. Piner ,  John C. Roberts ,  Pradeep Rajagopal

IPC分类号： H01L21/20

CPC分类号： H01L29/7787 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02543 ,  H01L29/2003 ,  H01L29/432

摘要： Semiconductor materials including a gallium nitride material region and methods associated with such structures are provided. The semiconductor structures include a strain-absorbing layer formed within the structure. The strain-absorbing layer may be formed between the substrate (e.g., a silicon substrate) and an overlying layer. It may be preferable for the strain-absorbing layer to be very thin, have an amorphous structure and be formed of a silicon nitride-based material. The strain-absorbing layer may reduce the number of misfit dislocations formed in the overlying layer (e.g., a nitride-based material layer) which limits formation of other types of defects in other overlying layers (e.g., gallium nitride material region), amongst other advantages. Thus, the presence of the strain-absorbing layer may improve the quality of the gallium nitride material region which can lead to improved device performance.

摘要翻译： 提供了包括氮化镓材料区域的半导体材料和与这种结构相关联的方法。 半导体结构包括在该结构内形成的应变吸收层。 应变吸收层可以形成在衬底（例如，硅衬底）和上覆层之间。 应变吸收层非常薄，具有非晶结构并且由氮化硅基材料形成可能是优选的。 应变吸收层可以减少在上层（例如，氮化物基材料层）中形成的失配位错的数量，其限制在其它覆盖层（例如，氮化镓材料区域）中形成其他类型的缺陷，其他 优点。 因此，应变吸收层的存在可以提高氮化镓材料区域的质量，这可以导致改进的器件性能。

公开(公告)号：US20050285142A1

公开(公告)日：2005-12-29

申请号：US11096505

申请日：2005-04-01

申请人： Edwin Piner ,  John Roberts ,  Pradeep Rajagopal

发明人： Edwin Piner ,  John Roberts ,  Pradeep Rajagopal

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L29/24 ,  H01L31/072

CPC分类号： H01L29/7787 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02543 ,  H01L29/2003 ,  H01L29/432

摘要： Semiconductor materials including a gallium nitride material region and methods associated with such structures are provided. The semiconductor structures include a strain-absorbing layer formed within the structure. The strain-absorbing layer may be formed between the substrate (e.g., a silicon substrate) and an overlying layer. It may be preferable for the strain-absorbing layer to be very thin, have an amorphous structure and be formed of a silicon nitride-based material. The strain-absorbing layer may reduce the number of misfit dislocations formed in the overlying layer (e.g., a nitride-based material layer) which limits formation of other types of defects in other overlying layers (e.g., gallium nitride material region), amongst other advantages. Thus, the presence of the strain-absorbing layer may improve the quality of the gallium nitride material region which can lead to improved device performance.

摘要翻译： 提供了包括氮化镓材料区域的半导体材料和与这种结构相关联的方法。 半导体结构包括在该结构内形成的应变吸收层。 应变吸收层可以形成在衬底（例如，硅衬底）和上覆层之间。 应变吸收层非常薄，具有非晶结构并且由氮化硅基材料形成可能是优选的。 应变吸收层可以减少在上层（例如，氮化物基材料层）中形成的失配位错的数量，其限制在其它覆盖层（例如，氮化镓材料区域）中形成其他类型的缺陷，其他 优点。 因此，应变吸收层的存在可以提高氮化镓材料区域的质量，这可以导致改进的器件性能。