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103 条记录 (耗时 0.029 秒)

    ORGANIC LIGHT EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME
    33.
    发明申请
    ORGANIC LIGHT EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME 审中-公开
    有机发光显示器及其制造方法

    公开(公告)号：US20100109511A1

    公开(公告)日：2010-05-06

    申请号：US12421506

    申请日：2009-04-09

    申请人： Seong-Ho KIM ,  Beohm-Rock Choi ,  Young-Rok Song

    发明人： Seong-Ho KIM ,  Beohm-Rock Choi ,  Young-Rok Song

    IPC分类号： H01J1/62 ,  H01L51/56

    CPC分类号： H01L27/326 ,  H01L27/3211 ,  H01L27/3258

    摘要： An organic light emitting display and a method for manufacturing the same are provided in one or more embodiments. For example, an organic light emitting display may include a first substrate including a plurality of main-pixel areas each of which may include a plurality of sub-pixel areas and an insulating layer pattern arranged on the first substrate. The insulating layer pattern may include an inclined surface having an inclination angle with respect to the first substrate and corresponding to each sub-pixel area. A first electrode may be arranged on the inclined surface, an organic light emitting layer may be arranged on the first electrode, and a second electrode may be arranged on the organic light emitting layer.

    摘要翻译： 在一个或多个实施例中提供有机发光显示器及其制造方法。 例如，有机发光显示器可以包括包括多个主像素区域的第一基板，每个主像素区域可以包括多个子像素区域和布置在第一基板上的绝缘层图案。 绝缘层图案可以包括相对于第一基板具有倾斜角并且对应于每个子像素区域的倾斜表面。 第一电极可以布置在倾斜表面上，有机发光层可以布置在第一电极上，第二电极可以布置在有机发光层上。

    Dishwasher and controlling method thereof
    34.
    发明申请
    Dishwasher and controlling method thereof 有权

    公开(公告)号：US20100043840A1

    公开(公告)日：2010-02-25

    申请号：US12457548

    申请日：2009-06-15

    申请人： Seong Ho Kim ,  Joon Ho Pyo

    发明人： Seong Ho Kim ,  Joon Ho Pyo

    IPC分类号： A47L15/08 ,  A47L15/42

    CPC分类号： A47L15/4221 ,  A47L15/0052 ,  A47L2401/08 ,  A47L2501/03

    摘要： A dishwasher and controlling method thereof are disclosed, by which noise generated from rotation of a passage switching valve can be reduced in a manner of adjusting a rotation timing point of the passage switching valve and a rotation speed of a wash pump. The embodiments describe rotating a passage switching valve for switching a passage to selectively supply water to either an upper nozzle or a lower nozzle and reducing a rotational speed of a wash pump supplying the water to the upper and lower nozzles before the rotation of the passage switching valve.

    Methods of fabricating field effect transistors having multiple stacked channels
    35.
    发明授权
    Methods of fabricating field effect transistors having multiple stacked channels 有权
    制造具有多个堆叠通道的场效应晶体管的方法

    公开(公告)号：US07615429B2

    公开(公告)日：2009-11-10

    申请号：US11948175

    申请日：2007-11-30

    申请人： Sung-Min Kim ,  Dong-Gun Park ,  Chang-Sub Lee ,  Jeong-Dong Choe ,  Shin-Ae Lee ,  Seong-Ho Kim

    发明人： Sung-Min Kim ,  Dong-Gun Park ,  Chang-Sub Lee ,  Jeong-Dong Choe ,  Shin-Ae Lee ,  Seong-Ho Kim

    IPC分类号： H01L21/336

    CPC分类号： H01L29/785 ,  H01L21/823412 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/66477 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66772 ,  H01L29/66787 ,  H01L29/78 ,  H01L29/78642 ,  H01L29/78654 ,  H01L29/78696

    摘要： Integrated circuit field effect transistor devices include a substrate having a surface and an active channel pattern on the surface. The active channel pattern includes channels that are stacked upon one another and are spaced apart from one another to define at least one tunnel between adjacent channels. A gate electrode surrounds the channels and extends through the at least one tunnel. A pair of source/drain regions also is provided. Integrated circuit field effect transistors are manufactured, by forming a pre-active pattern on a surface of a substrate. The pre-active pattern includes a series of interchannel layers and channel layers stacked alternately upon each other. Source/drain regions are formed on the substrate at opposite ends of the pre-active pattern. The interchannel layers are selectively removed to form tunnels. A gate electrode is formed in the tunnels and surrounding the channels.

    摘要翻译： 集成电路场效应晶体管器件包括在表面上具有表面和有源沟道图案的衬底。 活动通道图案包括彼此堆叠并且彼此间隔开以限定相邻通道之间的至少一个通道的通道。 栅电极围绕通道并延伸穿过至少一个通道。 还提供了一对源极/漏极区域。 通过在衬底的表面上形成预活性图案来制造集成电路场效应晶体管。 预激活图案包括彼此交替堆叠的一系列通道间层和沟道层。 在预活化图案的相对端处，在衬底上形成源极/漏极区域。 选择性地去除通道间层以形成隧道。 在隧道中形成栅电极并围绕通道。

    MOS Transistors having inverted T-shaped gate electrodes and fabrication methods thereof
    36.
    发明授权
    MOS Transistors having inverted T-shaped gate electrodes and fabrication methods thereof 失效
    具有反相T形栅电极的MOS晶体管及其制造方法

    公开(公告)号：US07534707B2

    公开(公告)日：2009-05-19

    申请号：US11560556

    申请日：2006-11-16

    申请人： Shin-Ae Lee ,  Dong-gun Park ,  Chang-sub Lee ,  Jeong-dong Choe ,  Sung-min Kim ,  Seong-ho Kim

    发明人： Shin-Ae Lee ,  Dong-gun Park ,  Chang-sub Lee ,  Jeong-dong Choe ,  Sung-min Kim ,  Seong-ho Kim

    IPC分类号： H01L21/3205

    CPC分类号： H01L29/66583 ,  H01L21/28114 ,  H01L21/823842 ,  H01L21/82385 ,  H01L21/823864 ,  H01L29/42376 ,  H01L29/665 ,  H01L29/66537 ,  H01L29/66553

    摘要： MOS transistors have an active region defined in a portion of a semiconductor substrate, a gate electrode on the active region, and drain and source regions in the substrate. First and second lateral protrusions extend from the lower portions of respective sidewalls of the gate electrode. The drain region has a first lightly-doped drain region under the first lateral protrusion, a second lightly-doped drain region adjacent the first lightly-doped drain region, and a heavily-doped drain region adjacent to the second lightly-doped drain region. The source region similarly has a first lightly-doped source region under the second lateral protrusion, a second lightly-doped source region adjacent the first lightly-doped source region, and a heavily-doped source region adjacent to the second lightly-doped source region. The second lightly-doped regions are deeper than the first lightly-doped regions, and the gate electrode may have an inverted T-shape.

    摘要翻译： MOS晶体管具有限定在半导体衬底的一部分中的有源区，有源区上的栅电极和衬底中的漏极和源极区。 第一和第二横向突起从栅电极的相应侧壁的下部延伸。 漏极区域在第一横向突起下方具有第一轻掺杂漏极区域，与第一轻掺杂漏极区域相邻的第二轻掺杂漏极区域和与第二轻掺杂漏极区域相邻的重掺杂漏极区域。 源极区域类似地在第二横向突起下方具有第一轻掺杂源极区域，与第一轻掺杂源极区域相邻的第二轻掺杂源极区域和与第二轻掺杂源极区域相邻的重掺杂源极区域 。 第二轻掺杂区域比第一轻掺杂区域深，并且栅电极可以具有倒置T形。

    DISH WASHING MACHINE
    37.
    发明申请
    DISH WASHING MACHINE 审中-公开
    洗碗机

    公开(公告)号：US20090056769A1

    公开(公告)日：2009-03-05

    申请号：US12200604

    申请日：2008-08-28

    申请人： Jung Youp HAN ,  Yong Jim Choi ,  Joon Ho Pyo ,  Young Hwan Park ,  Seong Ho Kim

    发明人： Jung Youp HAN ,  Yong Jim Choi ,  Joon Ho Pyo ,  Young Hwan Park ,  Seong Ho Kim

    IPC分类号： A47L15/48

    CPC分类号： A47L15/4257

    摘要： A dish washing machine including a tub configured to form a space for a dish to be washed, a door configured to open or close the tub, and an exhaust duct extended to an under portion of the door to exhaust air in the tub. Further, the exhaust duct has a lower end sloped with respect to an installation surface of the dish washing machine.

    摘要翻译： 一种洗碗机，其包括构造成用于形成用于待洗涤的盘的空间的桶，构造成打开或关闭桶的门，以及延伸到门的下部的排气管，以排出桶中的空气。 此外，排气管道的下端相对于洗碗机的安装面倾斜。