公开(公告)号：US20080156722A1

公开(公告)日：2008-07-03

申请号：US12007788

申请日：2008-01-15

Applicant: Kenichi Suzuki ,  Yasuhiro Tada ,  Takeo Takahashi ,  Masayuki Hino ,  Kosuke Abe ,  Toshiya Mizuno

Inventor： Kenichi Suzuki ,  Yasuhiro Tada ,  Takeo Takahashi ,  Masayuki Hino ,  Kosuke Abe ,  Toshiya Mizuno

IPC: B01D71/26 ,  B01D67/00

CPC classification number: B01D71/34 ,  B01D67/0011 ,  B01D67/0018 ,  B01D67/0027 ,  B01D67/003 ,  B01D69/02 ,  B01D69/08 ,  B01D2323/12 ,  B01D2323/20 ,  B01D2325/02 ,  D01D5/24 ,  D01F6/12

Abstract: A hollow-fiber porous membrane comprising a hollow fiber-form porous membrane of vinylidene fluoride resin and having an average pore size Pm of 0.05-0.20 μm, a maximum pore size Pmax giving a ratio Pmax/Pm of at most 2.0 between the maximum pore size Pmax and the average pore size Pm and a standard deviation of pore size distribution of at most 0.20 μm based on a pore size distribution according to the half dry/bubble point method (ASTM•F316 and ASTM•E1294) is provided, as a hollow-fiber porous membrane of vinylidene fluoride resin having minute pores with a size (average pore diameter) and a further uniform pore size distribution suitable for water (filtration) treatment. The hollow-fiber porous membrane is produced through a process of producing a hollow-fiber porous membrane by melt-extruding a mixture of a vinylidene fluoride resin, a plasticizer and a good solvent for vinylidene fluoride resin into a hollow fiber-form, followed by cooling and extraction of the plasticizer, wherein the proportion of the good solvent in the total amount of the plasticizer and the good solvent contained in the mixture is increased to 20-35 wt. %.

Abstract translation: 一种中空纤维多孔膜，其包含偏氟乙烯树脂的中空纤维状多孔膜，平均孔径Pm为0.05〜0.20μm，最大孔径Pmax的最大孔径Pmax / Pm为2.0以下， 提供基于根据半干/泡点法（ASTMF316和ASTM.E1294）的孔径分布，孔径分布的平均孔径Pm和孔径分布的至多0.20μm的标准偏差，作为 具有尺寸（平均孔径）的微孔和适于水（过滤）处理的更均匀的孔径分布的偏氟乙烯树脂的中空纤维多孔膜。 中空纤维多孔膜通过将偏氟乙烯树脂，增塑剂和偏氟乙烯树脂的良溶剂的混合物熔融挤出成中空纤维状而制造中空纤维多孔膜的方法制造，然后通过 冷却和提取增塑剂，其中良溶剂在增塑剂和混合物中所含的良溶剂总量中的比例增加到20-35wt。 ％。

公开(公告)号：US20070284566A1

公开(公告)日：2007-12-13

申请号：US11761080

申请日：2007-06-11

Applicant: Yasuhiro Tada ,  Akihiko Hanya

Inventor： Yasuhiro Tada ,  Akihiko Hanya

IPC: H01L29/06

CPC classification number: H01L25/0756 ,  H01L33/20 ,  H01L33/60 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05599

Abstract: The disclosed subject matter provides a composite semiconductor device which can include a common substrate, a first semiconductor light emitting structure, and a second semiconductor light emitting structure. The first semiconductor light emitting structure can include an epitaxial grown layer containing a light emitting layer formed on part of the common substrate either directly or via a bonding layer. The second semiconductor light emitting structure can be provided in a notch at at least one location to which the epitaxial grown layer is not bonded, or in a recess formed in the notch at one location. The disclosed subject matter also provides a method of manufacturing a composite semiconductor device having the above-described and other structures.

Abstract translation: 所公开的主题提供了一种复合半导体器件，其可以包括公共衬底，第一半导体发光结构和第二半导体发光结构。 第一半导体发光结构可以包括直接地或经由接合层包含在共同衬底的一部分上形成的发光层的外延生长层。 第二半导体发光结构可以设置在外延生长层未被结合的至少一个位置处的凹口中，或者在一个位置处形成在凹口中的凹部中。 所公开的主题还提供了具有上述和其它结构的复合半导体器件的制造方法。

公开(公告)号：US20070262329A1

公开(公告)日：2007-11-15

申请号：US11677097

申请日：2007-02-21

Applicant: Yasuhiro Tada ,  Akihiko Hanya

Inventor： Yasuhiro Tada ,  Akihiko Hanya

IPC: H01L33/00

CPC classification number: H01L33/486 ,  H01L33/385 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor device manufacturing method can produce semiconductor light emitting/detecting devices that have high connective strength and high luminous energy by increasing contact areas of electrodes thereof and decreasing enclosed areas of electrodes thereof. A wafer is provided with a semiconductor substrate and a semiconductor epitaxial layer. A plurality of substrate concave portions and epitaxial layer concave portions are formed on the semiconductor substrate and the semiconductor epitaxial layer, respectively. Substrate electrodes and epitaxial layer electrodes are formed in the substrate concave portions and the epitaxial layer concave portions. A substrate surface electrode and an epitaxial layer surface electrode can be formed on the semiconductor substrate and the substrate electrodes and the semiconductor epitaxial layer and the epitaxial layer electrodes, respectively. The wafer can be diced at a location that includes both the substrate electrodes and the epitaxial layer electrodes, and can then be separated to provide the device(s).

Abstract translation: 半导体器件制造方法可以通过增加其电极的接触面积和减小其电极的封闭面积来制造具有高连接强度和高发光能力的半导体发光/​​检测器件。 晶片设置有半导体衬底和半导体外延层。 分别在半导体衬底和半导体外延层上形成多个衬底凹部和外延层凹部。 衬底电极和外延层电极形成在衬底凹部和外延层凹部中。 衬底表面电极和外延层表面电极可以分别形成在半导体衬底和衬底电极以及半导体外延层和外延层电极上。 可以在包括衬底电极和外延层电极的位置处切割晶片，然后可以分离以提供器件。