公开(公告)号：US20100200942A1

公开(公告)日：2010-08-12

申请号：US12763615

申请日：2010-04-20

申请人： Itaru Oshiyama ,  Takashi Ando ,  Susumu Hiyama ,  Tetsuji Yamaguchi ,  Yuko Ohgishi ,  Harumi Ikeda

发明人： Itaru Oshiyama ,  Takashi Ando ,  Susumu Hiyama ,  Tetsuji Yamaguchi ,  Yuko Ohgishi ,  Harumi Ikeda

IPC分类号： H01L31/02 ,  H01L31/0232

CPC分类号： H01L27/14636 ,  H01L27/1461 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/14818 ,  H01L27/14868

摘要： A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.

公开(公告)号：US20100141816A1

公开(公告)日：2010-06-10

申请号：US12703848

申请日：2010-02-11

申请人： Yasushi Maruyama ,  Tetsuji Yamaguchi ,  Takashi Ando ,  Susumu Hiyama ,  Yuko Ohgishi

发明人： Yasushi Maruyama ,  Tetsuji Yamaguchi ,  Takashi Ando ,  Susumu Hiyama ,  Yuko Ohgishi

IPC分类号： H04N5/335 ,  H01L27/148 ,  H01L31/18

CPC分类号： H01L27/14609 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/022466 ,  H01L31/022475

摘要： A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.

摘要翻译： 固态成像装置包括具有第一表面和第二表面的基板，入射到第二表面侧的光; 布置在所述第一表面侧上的布线层; 形成在所述基板中并且包括第一导电类型的第一区域的光电检测器; 设置在所述基板的所述第一表面上且与所述光电检测器相邻的传输栅极，所述传输栅极传送累积在所述光电检测器中的信号电荷; 以及至少一个控制栅极，其设置在所述基板的所述第一表面上并且重叠在所述光电检测器上，所述控制栅极控制所述光电检测器在所述第一表面附近的电位。

公开(公告)号：US20090303371A1

公开(公告)日：2009-12-10

申请号：US12480351

申请日：2009-06-08

申请人： Taiichiro Watanabe ,  Akihiro Yamada ,  Hideo Kido ,  Hiromasa Saito ,  Keiji Mabuchi ,  Yuko Ohgishi

发明人： Taiichiro Watanabe ,  Akihiro Yamada ,  Hideo Kido ,  Hiromasa Saito ,  Keiji Mabuchi ,  Yuko Ohgishi

IPC分类号： H04N5/335 ,  H04N5/225 ,  H01L31/112

CPC分类号： H01L27/14887 ,  H01L27/14603 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14647 ,  H01L27/14656

摘要： A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.

摘要翻译： 固态成像装置包括：在基板的单位像素区域中形成为不同深度的多个光电二极管; 以及从衬底的一个正面侧在深度方向上形成的多个垂直晶体管，使得用于读取在多个光电二极管中通过光电转换获得的信号电荷的栅极部分形成在与各个光电二极管对应的深度处。

公开(公告)号：US20070210395A1

公开(公告)日：2007-09-13

申请号：US11677645

申请日：2007-02-22

申请人： Yasushi Maruyama ,  Tetsuji Yamaguchi ,  Takashi Ando ,  Susumu Hiyama ,  Yuko Ohgishi

发明人： Yasushi Maruyama ,  Tetsuji Yamaguchi ,  Takashi Ando ,  Susumu Hiyama ,  Yuko Ohgishi

IPC分类号： H01L27/14

CPC分类号： H01L27/14609 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/022466 ,  H01L31/022475

摘要： A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.

摘要翻译： 固态成像装置包括具有第一表面和第二表面的基板，入射到第二表面侧的光; 布置在所述第一表面侧上的布线层; 形成在所述基板中并且包括第一导电类型的第一区域的光电检测器; 设置在所述基板的所述第一表面上且与所述光电检测器相邻的传输栅极，所述传输栅极传送累积在所述光电检测器中的信号电荷; 以及至少一个控制栅极，其设置在所述基板的所述第一表面上并且重叠在所述光电检测器上，所述控制栅极控制所述光电检测器在所述第一表面附近的电位。

公开(公告)号：US20070117325A1

公开(公告)日：2007-05-24

申请号：US11624346

申请日：2007-01-18

申请人： Yuko Ohgishi

发明人： Yuko Ohgishi

IPC分类号： H01L21/336

CPC分类号： H01L29/4916 ,  H01L27/0629

摘要： The gate electrode of a high-voltage transistor having a high breakdown voltage is formed from a polysilicon layer having a larger average grain size, so that depletion of the gate electrode easily occurs. By utilizing this depletion, the electrical effective film thickness required by the gate dielectric film of the transistor can be increased. In contrast, the gate electrode of a high-performance transistor needs to have a high speed and a large drive current is formed from a polysilicon layer having a smaller average grain size, so that depletion of the gate electrode hardly occurs. Accordingly, the electrical effective film thickness of the gate dielectric film of the transistor can be maintained at a small value.

摘要翻译： 具有高击穿电压的高压晶体管的栅电极由平均晶粒尺寸较大的多晶硅层形成，从而易于发生栅电极的耗尽。 通过利用这种耗尽，可以增加晶体管的栅极电介质膜所需的电学有效膜厚度。 相反，高性能晶体管的栅电极需要高速度，并且由具有较小平均晶粒尺寸的多晶硅层形成较大的驱动电流，从而几乎不发生栅电极的耗尽。 因此，晶体管的栅极电介质膜的电气有效膜厚度可以保持在较小的值。