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公开(公告)号：US09000493B2
公开(公告)日：2015-04-07
申请号：US13402298
申请日：2012-02-22
IPC分类号： H01L27/148 , H01L27/146 , H01L31/0224
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate with oppositely facing first surface and second surfaces, light being received through the second surface; a wiring layer on the first surface; a photodetector in the substrate; a charge accumulation region between the second surface and the photodetector; and an insulating layer over the second surface, the insulating layer have a region that is at least partially crystallized.
摘要翻译： 固态成像装置包括具有相对面对的第一表面和第二表面的基板，光被接收通过第二表面; 第一表面上的布线层; 基板上的光电检测器; 第二表面和光电检测器之间的电荷累积区域; 以及在所述第二表面上的绝缘层，所述绝缘层具有至少部分地结晶的区域。
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公开(公告)号：US08492804B2
公开(公告)日：2013-07-23
申请号：US12945217
申请日：2010-11-12
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.
摘要翻译： 固态成像装置包括具有第一表面和第二表面的基板，入射到第二表面侧的光; 布置在所述第一表面侧上的布线层; 形成在所述基板中并且包括第一导电类型的第一区域的光电检测器; 设置在所述基板的所述第一表面上且与所述光电检测器相邻的传输栅极，所述传输栅极传送累积在所述光电检测器中的信号电荷; 以及至少一个控制栅极，其设置在所述基板的所述第一表面上并且重叠在所述光电检测器上，所述控制栅极控制所述光电检测器在所述第一表面附近的电位。
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公开(公告)号：US08183603B2
公开(公告)日：2012-05-22
申请号：US11677645
申请日：2007-02-22
IPC分类号： H01L27/148
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.
摘要翻译： 固态成像装置包括具有第一表面和第二表面的基板，入射到第二表面侧的光; 布置在所述第一表面侧上的布线层; 形成在所述基板中并且包括第一导电类型的第一区域的光电检测器; 设置在所述基板的所述第一表面上且与所述光电检测器相邻的传输栅极，所述传输栅极传送累积在所述光电检测器中的信号电荷; 以及至少一个控制栅极，其设置在所述基板的所述第一表面上并且重叠在所述光电检测器上，所述控制栅极控制所述光电检测器在所述第一表面附近的电位。
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公开(公告)号：US08471314B2
公开(公告)日：2013-06-25
申请号：US12703848
申请日：2010-02-11
IPC分类号： H01L31/062
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.
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公开(公告)号：US20120147241A1
公开(公告)日：2012-06-14
申请号：US13402298
申请日：2012-02-22
IPC分类号： H04N5/335 , H01L27/148
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate with oppositely facing first surface and second surfaces, light being received through the second surface; a wiring layer on the first surface; a photodetector in the substrate; a charge accummulation region between the second surface and the photodetector; and an insulating layer over the second surface, the insulating layer have a region that is at least partially crystallized.
摘要翻译： 固态成像装置包括具有相对面对的第一表面和第二表面的基板，光被接收通过第二表面; 第一表面上的布线层; 基板上的光电检测器; 所述第二表面和所述光电检测器之间的电荷累积区域; 以及在所述第二表面上的绝缘层，所述绝缘层具有至少部分地结晶的区域。
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公开(公告)号：US20110058062A1
公开(公告)日：2011-03-10
申请号：US12945217
申请日：2010-11-12
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.
摘要翻译： 固态成像装置包括具有第一表面和第二表面的基板，入射到第二表面侧的光; 布置在所述第一表面侧上的布线层; 形成在所述基板中并且包括第一导电类型的第一区域的光电检测器; 设置在所述基板的所述第一表面上且与所述光电检测器相邻的传输栅极，所述传输栅极传送累积在所述光电检测器中的信号电荷; 以及至少一个控制栅极，其设置在所述基板的所述第一表面上并且重叠在所述光电检测器上，所述控制栅极控制所述光电检测器在所述第一表面附近的电位。
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公开(公告)号：US20100141816A1
公开(公告)日：2010-06-10
申请号：US12703848
申请日：2010-02-11
IPC分类号： H04N5/335 , H01L27/148 , H01L31/18
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.
摘要翻译： 固态成像装置包括具有第一表面和第二表面的基板，入射到第二表面侧的光; 布置在所述第一表面侧上的布线层; 形成在所述基板中并且包括第一导电类型的第一区域的光电检测器; 设置在所述基板的所述第一表面上且与所述光电检测器相邻的传输栅极，所述传输栅极传送累积在所述光电检测器中的信号电荷; 以及至少一个控制栅极，其设置在所述基板的所述第一表面上并且重叠在所述光电检测器上，所述控制栅极控制所述光电检测器在所述第一表面附近的电位。
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公开(公告)号：US20070210395A1
公开(公告)日：2007-09-13
申请号：US11677645
申请日：2007-02-22
IPC分类号： H01L27/14
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.
摘要翻译： 固态成像装置包括具有第一表面和第二表面的基板，入射到第二表面侧的光; 布置在所述第一表面侧上的布线层; 形成在所述基板中并且包括第一导电类型的第一区域的光电检测器; 设置在所述基板的所述第一表面上且与所述光电检测器相邻的传输栅极，所述传输栅极传送累积在所述光电检测器中的信号电荷; 以及至少一个控制栅极，其设置在所述基板的所述第一表面上并且重叠在所述光电检测器上，所述控制栅极控制所述光电检测器在所述第一表面附近的电位。
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公开(公告)号：US08993369B2
公开(公告)日：2015-03-31
申请号：US13181630
申请日：2011-07-13
申请人： Yasushi Maruyama , Hideshi Abe , Hiroyuki Mori
发明人： Yasushi Maruyama , Hideshi Abe , Hiroyuki Mori
IPC分类号： H01L21/00 , H01L27/146
CPC分类号： H01L27/14645 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14643 , H01L27/14658 , H01L27/14683 , H01L27/14685 , H01L27/14689
摘要： A method for manufacturing a solid-state imaging device in which: photo sensor portions are formed in a silicon layer over a substrate, a first conductivity type region being included in the photo sensor portions and a second conductivity type region being formed in the silicon layer implanted from a rear-surface of the solid-state imaging device by ion implantation; a wiring portion is formed above the silicon layer; and a supporting substrate is bonded to the wiring portion, wherein, the solid-state imaging device is configured for receiving incident light via the rear-surface of the solid-state imaging device.
摘要翻译： 一种固体摄像装置的制造方法，其特征在于，在基板上形成有硅传感器部，在所述光传感器部中包含第一导电型区域，在所述硅层中形成第二导电型区域 通过离子注入从固态成像装置的后表面注入; 在硅层上形成配线部分; 并且支撑基板被接合到布线部分，其中，固态成像装置被配置为经由固态成像装置的后表面接收入射光。
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10.发明授权Solid-state imaging device, method of manufacturing the same, and electronic apparatus 有权固态成像装置及其制造方法以及电子装置公开(公告)号：US08928784B2
公开(公告)日：2015-01-06
申请号：US12699488
申请日：2010-02-03
IPC分类号： H04N3/14 , H01L31/062 , H01L27/146 , H01L21/78 , H01L31/0216 , H01L31/18
CPC分类号： H01L27/14645 , H01L21/7806 , H01L27/14612 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14629 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14685 , H01L27/14687 , H01L31/0216 , H01L31/02162 , H01L31/18 , H01L31/1804 , H04N5/359 , Y02P70/521
摘要： A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.
摘要翻译： 固态成像装置包括：配置由光电转换部和像素晶体管构成的多个像素的像素区域; 片上滤色片; 片上微透镜; 以及多层互连层，其中通过层间绝缘膜形成多个互连层。 固态成像装置还包括通过布置有光电转换部的光接收表面的像素边界中的绝缘层形成的遮光膜。
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