公开(公告)号：US09946165B2

公开(公告)日：2018-04-17

申请号：US15025856

申请日：2014-09-05

Applicant: ASML Netherlands B.V.

Inventor： Alexander Ypma ,  Jasper Menger ,  David Deckers ,  David Han ,  Adrianus Cornelis Matheus Koopman ,  Irina Lyulina ,  Scott Anderson Middlebrooks ,  Richard Johannes Franciscus Van Haren ,  Jochem Sebastiaan Wildenberg

IPC: G03F7/20 ,  G03F9/00 ,  G06F17/30

CPC classification number: G03F7/70616 ,  G03F7/70508 ,  G03F7/70525 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70641 ,  G03F9/7092 ,  G06F17/30572

Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in said multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.

公开(公告)号：US20140168627A1

公开(公告)日：2014-06-19

申请号：US14069287

申请日：2013-10-31

Applicant: ASML Netherlands B.V.

Inventor： Emil Peter SCHMITT-WEAVER ,  Paul Frank Luehrmann ,  Eduardus Johannes Gerardus Boon ,  Daan Maurits Slotboom ,  Jean-Philippe Xavier Van Damme ,  Wolfgang Henke ,  Alexander Ypma ,  Marc Jurian Kea

IPC: G03F7/20

CPC classification number: G03F7/70908 ,  G03F7/707 ,  G03F7/7085 ,  G03F7/70916 ,  G03F9/70

Abstract: A reticle is loaded into a lithographic apparatus. The apparatus performs measurements on the reticle, so as to calculate alignment parameters for transferring the pattern accurately to substrates. Tests are performed to detect possible contamination of the reticle or its support. Either operation proceeds with a warning, or the patterning of substrates is stopped. The test uses may use parameters of the alignment model itself, or different parameters. The integrity parameters may be compared against reference values reflecting historic measurements, so that sudden changes in a parameter are indicative of contamination. Integrity parameters may be calculated from residuals of the alignment model. In an example, height residuals are used to calculate parameters of residual wedge (Rx′) and residual roll (Ryy′). From these, integrity parameters expressed as height deviations are calculated and compared against thresholds.

Abstract translation: 将掩模版加载到光刻设备中。 该装置对掩模版进行测量，以便计算用于将图案精确地转印到基底上的对准参数。 执行测试以检测掩模版或其支撑体的可能污染。 任一操作都进行警告，或者停止基板的图案化。 测试使用可以使用对齐模型本身的参数或不同的参数。 可以将完整性参数与反映历史测量的参考值进行比较，使得参数中的突然变化指示污染。 可以从对齐模型的残差计算完整性参数。 在一个例子中，高度残差用于计算残余楔（Rx'）和残余辊（Ryy'）的参数。 从这些，计算表示为高度偏差的完整性参数，并将其与阈值进行比较。