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公开(公告)号：US20050090118A1
公开(公告)日：2005-04-28
申请号：US10823364
申请日：2004-04-12
申请人： Steven Shannon , Dennis Grimard , Theodoros Panagopoulos , Daniel Hoffman , Michael Chafin , Troy Detrick , Alexander Paterson , Jingbao Liu , Taeho Shin , Bryan Pu
发明人： Steven Shannon , Dennis Grimard , Theodoros Panagopoulos , Daniel Hoffman , Michael Chafin , Troy Detrick , Alexander Paterson , Jingbao Liu , Taeho Shin , Bryan Pu
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/302 , H01L21/461
CPC分类号： H01J37/32082 , H01J37/32165
摘要： A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.
摘要翻译： 提供一种使用双频RF源控制半导体衬底处理室中的等离子体特性的方法和装置。 该方法包括向设置在处理室中的第一电极提供第一RF信号，并向第一电极提供第二RF信号，其中第一和第二RF信号之间的相互作用用于控制等离子体的至少一个特性 形成在处理室中。
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公开(公告)号：US20070000611A1
公开(公告)日：2007-01-04
申请号：US11530670
申请日：2006-09-11
申请人： Steven Shannon , Dennis Grimard , Theodoros Panagopoulos , Daniel Hoffman , Michael Chafin , Troy Detrick , Alexander Paterson , Jingbao Liu , Taeho Shin , Bryan Pu
发明人： Steven Shannon , Dennis Grimard , Theodoros Panagopoulos , Daniel Hoffman , Michael Chafin , Troy Detrick , Alexander Paterson , Jingbao Liu , Taeho Shin , Bryan Pu
CPC分类号： H01J37/32082 , H01J37/32165
摘要： A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.
摘要翻译： 提供一种使用双频RF源控制半导体衬底处理室中的等离子体特性的方法和装置。 该方法包括向设置在处理室中的第一电极提供第一RF信号，并向第一电极提供第二RF信号，其中第一和第二RF信号之间的相互作用用于控制等离子体的至少一个特性 形成在处理室中。
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公开(公告)号：US07436645B2
公开(公告)日：2008-10-14
申请号：US11531474
申请日：2006-09-13
申请人： John Holland , Theodoros Panagopoulos , Alexander Matyushkin , Dan Katz , Michael F. Hegarty , Denis M. Koosau , Nicolas Gani
发明人： John Holland , Theodoros Panagopoulos , Alexander Matyushkin , Dan Katz , Michael F. Hegarty , Denis M. Koosau , Nicolas Gani
IPC分类号： H01T23/00
CPC分类号： H01L21/67109 , H01L21/67103 , H01L21/6831
摘要： A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, the pedestal assembly includes an electrostatic chuck coupled to a metallic base. The electrostatic chuck includes at least one chucking electrode and metallic base includes at least two fluidly isolated conduit loops disposed therein. In another embodiment, the pedestal assembly includes a support member that is coupled to a base by a material layer. The material layer has at least two regions having different coefficients of thermal conductivity. In another embodiment, the support member is an electrostatic chuck. In further embodiments, a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby controlling the temperature profile of a substrate disposed on the support member.
摘要翻译： 提供了一种用于在处理期间控制基板的温度的基座组件和方法。 在一个实施例中，基座组件包括联接到金属基座的静电卡盘。 静电吸盘包括至少一个夹紧电极和金属底座，其包括设置在其中的至少两个流体隔离的导管环。 在另一个实施例中，基座组件包括通过材料层联接到基座的支撑构件。 材料层具有至少两个具有不同导热系数的区域。 在另一个实施例中，支撑构件是静电卡盘。 在另外的实施例中，基座组件具有形成在基部和支撑构件之间的通道，用于在材料层附近提供冷却气体，以进一步控制支撑构件和基座之间的热传递，由此控制设置在基座上的基板的温度分布 支持会员
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公开(公告)号：US20080017104A1
公开(公告)日：2008-01-24
申请号：US11778019
申请日：2007-07-14
CPC分类号： H05B3/0047 , B05C13/00 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H01L21/6833
摘要： A substrate processing chamber comprises an electrostatic chuck comprising a ceramic puck having a substrate receiving surface and an opposing backside surface. In one version, the ceramic puck comprises a thickness of less than 7 mm. An electrode is embedded in the ceramic puck to generate an electrostatic force to hold a substrate, and heater coils in the ceramic puck allow independent control of temperatures at different heating zones of the puck. A chiller provides coolant to coolant channels in a base below the ceramic puck. A controller comprises temperature control instruction sets which set the coolant temperature in the chiller in relation prior to ramping up or down of the power levels applied to the heater.
摘要翻译： 基板处理室包括静电卡盘，该静电卡盘包括具有基板接收表面和相对的背面的陶瓷盘。 在一个版本中，陶瓷盘包括小于7mm的厚度。 电极嵌入陶瓷盘中以产生静电力来保持基板，并且陶瓷盘中的加热器线圈允许独立控制在不同加热区域的温度。 冷却器为陶瓷盘下方的底座中的冷却剂通道提供冷却剂。 控制器包括温度控制指令集，其将冷却器内的冷却剂温度设定为在施加到加热器的功率水平上升或下降之前。
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公开(公告)号：US20070139856A1
公开(公告)日：2007-06-21
申请号：US11531474
申请日：2006-09-13
申请人： John Holland , Theodoros Panagopoulos , Alexander Matyushkin , Dan Katz , Michael Hegarty , Denis Koosau , Nicolas Gani
发明人： John Holland , Theodoros Panagopoulos , Alexander Matyushkin , Dan Katz , Michael Hegarty , Denis Koosau , Nicolas Gani
IPC分类号： H01T23/00
CPC分类号： H01L21/67109 , H01L21/67103 , H01L21/6831
摘要： A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, the pedestal assembly includes an electrostatic chuck coupled to a metallic base. The electrostatic chuck includes at least one chucking electrode and metallic base includes at least two fluidly isolated conduit loops disposed therein. In another embodiment, the pedestal assembly includes a support member that is coupled to a base by a material layer. The material layer has at least two regions having different coefficients of thermal conductivity. In another embodiment, the support member is an electrostatic chuck. In further embodiments, a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby controlling the temperature profile of a substrate disposed on the support member.
摘要翻译： 提供了一种用于在处理期间控制基板的温度的基座组件和方法。 在一个实施例中，基座组件包括联接到金属基座的静电卡盘。 静电吸盘包括至少一个夹紧电极和金属底座，其包括设置在其中的至少两个流体隔离的导管环。 在另一个实施例中，基座组件包括通过材料层联接到基座的支撑构件。 材料层具有至少两个具有不同导热系数的区域。 在另一个实施例中，支撑构件是静电卡盘。 在另外的实施例中，基座组件具有形成在基部和支撑构件之间的通道，用于在材料层附近提供冷却气体，以进一步控制支撑构件和基座之间的热传递，由此控制设置在基座上的基板的温度分布 支持会员
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公开(公告)号：US08663391B2
公开(公告)日：2014-03-04
申请号：US13556156
申请日：2012-07-23
IPC分类号： C23C16/458 , C23C16/46 , C23F1/00 , H01L21/306 , A21B1/00 , A21B1/22
CPC分类号： H01L21/6831 , H01L21/67109 , H01L21/6875 , Y10T279/23
摘要： An electrostatic chuck for receiving a substrate in a substrate processing chamber comprises a ceramic puck having a substrate receiving surface having a plurality of spaced apart mesas, an opposing backside surface, and central and peripheral portions. A plurality of heat transfer gas conduits traverse the ceramic puck and terminate in ports on the substrate receiving surface to provide heat transfer gas to the substrate receiving surface. An electrode is embedded in the ceramic puck to generate an electrostatic force to retain a substrate placed on the substrate receiving surface. A plurality of heater coils are also embedded in the ceramic puck, the heaters being radially spaced apart and concentric to one another.
摘要翻译： 用于在衬底处理室中接收衬底的静电吸盘包括具有衬底接收表面的陶瓷盘，所述衬底接收表面具有多个间隔开的台面，相对的背面以及中央和周边部分。 多个传热气体导管穿过陶瓷盘并终止在基板接收表面上的端口中，以向基板接收表面提供传热气体。 将电极嵌入陶瓷盘中以产生静电力以保持放置在基板接收表面上的基板。 多个加热器线圈也嵌入在陶瓷盘中，加热器径向间隔开并且彼此同心。
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公开(公告)号：US20120285619A1
公开(公告)日：2012-11-15
申请号：US13556156
申请日：2012-07-23
IPC分类号： C23C16/458 , H01L21/683 , B44C1/22
CPC分类号： H01L21/6831 , H01L21/67109 , H01L21/6875 , Y10T279/23
摘要： An electrostatic chuck for receiving a substrate in a substrate processing chamber comprises a ceramic puck having a substrate receiving surface having a plurality of spaced apart mesas, an opposing backside surface, and central and peripheral portions. A plurality of heat transfer gas conduits traverse the ceramic puck and terminate in ports on the substrate receiving surface to provide heat transfer gas to the substrate receiving surface. An electrode is embedded in the ceramic puck to generate an electrostatic force to retain a substrate placed on the substrate receiving surface. A plurality of heater coils are also embedded in the ceramic puck, the heaters being radially spaced apart and concentric to one another.
摘要翻译： 用于在衬底处理室中接收衬底的静电吸盘包括具有衬底接收表面的陶瓷盘，所述衬底接收表面具有多个间隔开的台面，相对的背面以及中央和周边部分。 多个传热气体导管穿过陶瓷盘并终止在基板接收表面上的端口中，以向基板接收表面提供传热气体。 将电极嵌入陶瓷盘中以产生静电力以保持放置在基板接收表面上的基板。 多个加热器线圈也嵌入在陶瓷盘中，加热器径向间隔开并且彼此同心。
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公开(公告)号：US20050034816A1
公开(公告)日：2005-02-17
申请号：US10843914
申请日：2004-05-12
申请人： Steven Shannon , Alex Paterson , Theodoros Panagopoulos , John Holland , Dennis Grimard , Yashushi Takakura
发明人： Steven Shannon , Alex Paterson , Theodoros Panagopoulos , John Holland , Dennis Grimard , Yashushi Takakura
IPC分类号： H01L21/3065 , H01J37/32 , C23F1/00
CPC分类号： H01J37/32082 , H01J37/32165 , H01J37/32706
摘要： A method and apparatus for generating and controlling a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method includes the steps of supplying a first RF signal from the source to an electrode within the processing chamber at a first frequency and supplying a second RF signal from the source to the electrode within the processing chamber at a second frequency. The second frequency is different from the first frequency by an amount equal to a desired frequency. Characteristics of a plasma formed in the chamber establish a sheath modulation at the desired frequency.
摘要翻译： 提供了一种使用双频RF源在半导体衬底处理室中产生和控制等离子体的方法和装置。 该方法包括以第一频率将来自源的第一RF信号提供给处理室内的电极的步骤，并以第二频率将来自源的第二RF信号提供给处理室内的电极。 第二频率与第一频率不等于期望频率的量。 在腔室中形成的等离子体的特性以期望的频率建立护套调制。
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39.发明申请公开(公告)号：US20070258186A1
公开(公告)日：2007-11-08
申请号：US11740869
申请日：2007-04-26
IPC分类号： H01T23/00
CPC分类号： H01L21/6831 , H01L21/67109 , H01L21/6875 , Y10T279/23
摘要： An electrostatic chuck for receiving a substrate in a substrate processing chamber comprises a ceramic puck having a substrate receiving surface and an opposing backside surface with a plurality of spaced apart mesas. An electrode is embedded in the ceramic puck to generate an electrostatic force to hold a substrate. Heater coils located at peripheral and central portions of the ceramic puck allow independent control of temperatures of the central and peripheral portions of the ceramic puck. The chuck is supported by a base having a groove with retained air. The chuck and base can also have an overlying edge ring and clamp ring.
摘要翻译： 用于在衬底处理室中接收衬底的静电吸盘包括具有衬底接收表面的陶瓷圆盘和具有多个间隔开的台面的相对的背面。 将电极嵌入陶瓷盘中以产生静电力以保持基板。 位于陶瓷圆盘的周边部分和中心部分的加热线圈允许独立地控制陶瓷盘的中心部分和周边部分的温度。 卡盘由具有保留空气的凹槽的基座支撑。 卡盘和底座也可以有一个上覆边缘环和夹环。
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公开(公告)号：US20060076109A1
公开(公告)日：2006-04-13
申请号：US11246012
申请日：2005-10-07
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00 , H01L21/00
CPC分类号： H01L21/67248 , H01L21/67103 , H01L21/6831 , Y10T279/23
摘要： A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, the pedestal assembly includes an electrostatic chuck coupled to a metallic base. The electrostatic chuck includes at least one chucking electrode and metallic base includes at least two fluidly isolated conduit loops disposed therein. In another embodiment, the pedestal assembly includes a support member that is coupled to a base by a material layer. The material layer has at least two regions having different coefficients of thermal conductivity. In another embodiment, the support member is an electrostatic chuck. In further embodiments, a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby controlling the temperature profile of a substrate disposed on the support member.
摘要翻译： 提供了一种用于在处理期间控制基板的温度的基座组件和方法。 在一个实施例中，基座组件包括联接到金属基座的静电卡盘。 静电吸盘包括至少一个夹紧电极和金属底座，其包括设置在其中的至少两个流体隔离的导管环。 在另一个实施例中，基座组件包括通过材料层联接到基座的支撑构件。 材料层具有至少两个具有不同导热系数的区域。 在另一个实施例中，支撑构件是静电卡盘。 在另外的实施例中，基座组件具有形成在基部和支撑构件之间的通道，用于在材料层附近提供冷却气体，以进一步控制支撑构件和基座之间的热传递，由此控制设置在基座上的基板的温度分布 支持会员
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