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    Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output
    2.
    发明申请
    Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output 有权
    具有E.S.C.反馈控制的双偏压等离子体反应器 电压使用晶圆电压测量在偏置电源输出

    公开(公告)号：US20060256499A1

    公开(公告)日：2006-11-16

    申请号：US11127036

    申请日：2005-05-10

    申请人： Jang Yang ,  Daniel Hoffman ,  Steven Shannon ,  Douglas Burns ,  Wonseok Lee ,  Kwang-Soo Kim

    发明人： Jang Yang ,  Daniel Hoffman ,  Steven Shannon ,  Douglas Burns ,  Wonseok Lee ,  Kwang-Soo Kim

    IPC分类号： H01T23/00

    CPC分类号： H01J37/32706 ,  H01J37/32935 ,  H01L21/6833 ,  Y10T279/23

    摘要： A plasma reactor has a dual frequency plasma RF bias power supply furnishing RF bias power comprising first and second frequency components, f(1), f(2), respectively, and an RF power path having an input end coupled to the plasma RF bias power supply and an output end coupled to the wafer support pedestal, and sensor circuits providing measurement signals representing first and second frequency components of a measured voltage and first and second frequency components of a measured current near the input end of the RF power path. The reactor further includes a processor for providing first and second frequency components of a wafer voltage signal as, respectively, a first sum of the first frequency components of the measured voltage and measured current multiplied by first and second coefficients respectively, and a second sum of the second frequency components of the measured voltage and measured current multiplied by third and fourth coefficients, respectively. A processor produces a D.C. wafer voltage by combining D.C. components of the first and second frequency components of the wafer voltage with an intermodulation correction factor that is the product of the D.C. components of the first and second components of the wafer voltage raised to a selected power and multiplied by a selected coefficient.

    摘要翻译： 等离子体反应器具有双频等离子体RF偏压电源，其分别提供包括第一和第二频率分量f（1），f（2）的RF偏置功率，以及具有耦合到等离子体RF偏置的输入端的RF功率路径 电源和耦合到晶片支撑基座的输出端，以及传感器电路，其提供表示测量电压的第一和第二频率分量以及在RF功率路径的输入端附近的测量电流的第一和第二频率分量的测量信号。 反应器还包括处理器，用于分别提供晶片电压信号的第一和第二频率分量，分别为测量电压的第一频率分量和测量电流乘以第一和第二系数的第一和，以及第二和 测量电压和测量电流的第二频率分量分别乘以第三和第四系数。 处理器通过将晶片电压的第一和第二频率分量的DC分量与作为晶片电压的第一和第二分量的DC分量升高到所选功率的互调校正因子相结合来产生DC晶片电压 并乘以所选系数。

    METHOD AND SYSTEM FOR CONTROLLING CENTER-TO-EDGE DISTRIBUTION OF SPECIES WITHIN A PLASMA
    4.
    发明申请
    METHOD AND SYSTEM FOR CONTROLLING CENTER-TO-EDGE DISTRIBUTION OF SPECIES WITHIN A PLASMA 审中-公开
    用于控制等离子体中物种分布的方法和系统

    公开(公告)号：US20090218315A1

    公开(公告)日：2009-09-03

    申请号：US12038921

    申请日：2008-02-28

    申请人： Steven Shannon

    发明人： Steven Shannon

    IPC分类号： B44C1/22 ,  C23F1/08

    CPC分类号： H01J37/3244 ,  H01J37/32449 ,  H01J37/32935 ,  H01J37/3299

    摘要： A method and system for controlling the center-to-edge distribution of a species within a plasma is provided. In one embodiment, the invention provides a method for plasma processing, comprising determining plasma processing center-to-edge profile requirements of a substrate, and selecting a ratio of two inert gases to be provided to a plasma processing chamber in response to the plasma processing center to edge profile requirements.

    摘要翻译： 提供了一种用于控制等离子体内的物质的中心到边缘分布的方法和系统。 在一个实施例中，本发明提供了一种用于等离子体处理的方法，包括确定衬底的等离子体处理中心到边缘轮廓要求，以及响应于等离子体处理选择要提供给等离子体处理室的两种惰性气体的比例 中心到边缘轮廓要求。

    METHOD FOR TESTING PLASMA REACTOR MULTI-FREQUENCY IMPEDANCE MATCH NETWORKS
    5.
    发明申请
    METHOD FOR TESTING PLASMA REACTOR MULTI-FREQUENCY IMPEDANCE MATCH NETWORKS 有权
    用于测试等离子体反应器多频阻抗匹配网络的方法

    公开(公告)号：US20070257743A1

    公开(公告)日：2007-11-08

    申请号：US11778055

    申请日：2007-07-15

    申请人： STEVEN SHANNON

    发明人： STEVEN SHANNON

    IPC分类号： H01P5/08

    CPC分类号： H01P5/08

    摘要： In one implementation, a method is provided for testing a plasma reactor multi-frequency matching network comprised of multiple matching networks, each of the multiple matching networks having an associated RF power source and being tunable within a tunespace. The method includes providing a multi-frequency dynamic dummy load having a frequency response within the tunespace of each of the multiple matching networks at an operating frequency of its associated RF power source. The method further includes characterizing a performance of the multi-frequency matching network based on a response of the multi-frequency matching network while simultaneously operating at multiple frequencies.

    摘要翻译： 在一个实现中，提供了一种用于测试由多个匹配网络组成的等离子体反应器多频匹配网络的方法，所述多个匹配网络中的每一个具有相关联的RF功率源并且可在调谐空间内调节。 该方法包括在其相关RF功率源的工作频率下提供在多个匹配网络中的每一个的调谐空间内具有频率响应的多频动态虚拟负载。 该方法还包括基于多频匹配网络的响应来表征多频匹配网络的性能，同时在多个频率下操作。

    PLASMA GENERATION AND CONTROL USING A DUAL FREQUENCY RF SOURCE
    7.
    发明申请
    PLASMA GENERATION AND CONTROL USING A DUAL FREQUENCY RF SOURCE 审中-公开
    使用双频RF源的等离子体生成和控制

    公开(公告)号：US20070006971A1

    公开(公告)日：2007-01-11

    申请号：US11531615

    申请日：2006-09-13

    申请人： Steven Shannon ,  Alex Paterson ,  Theodoros Panagopoulos ,  John Holland ,  Dennis Grimard ,  Yashushi Takakura

    发明人： Steven Shannon ,  Alex Paterson ,  Theodoros Panagopoulos ,  John Holland ,  Dennis Grimard ,  Yashushi Takakura

    IPC分类号： C23F1/00

    CPC分类号： H01J37/32082 ,  H01J37/32165 ,  H01J37/32706

    摘要： A method and apparatus for generating and controlling a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method includes the steps of supplying a first RF signal from the source to an electrode within the processing chamber at a first frequency and supplying a second RF signal from the source to the electrode within the processing chamber at a second frequency. The second frequency is different from the first frequency by an amount equal to a desired frequency. Characteristics of a plasma formed in the chamber establish a sheath modulation at the desired frequency.

    摘要翻译： 提供了一种使用双频RF源在半导体衬底处理室中产生和控制等离子体的方法和装置。 该方法包括以第一频率将来自源的第一RF信号提供给处理室内的电极的步骤，并以第二频率将来自源的第二RF信号提供给处理室内的电极。 第二频率与第一频率不等于期望频率的量。 在腔室中形成的等离子体的特性以期望的频率建立护套调制。

    Multi-frequency dynamic dummy load and method for testing plasma reactor multi-frequency impedance match networks
    10.
    发明申请
    Multi-frequency dynamic dummy load and method for testing plasma reactor multi-frequency impedance match networks 有权
    多频动态虚拟负载和等离子体反应堆多频阻抗匹配网络的测试方法

    公开(公告)号：US20050270118A1

    公开(公告)日：2005-12-08

    申请号：US10927382

    申请日：2004-08-26

    申请人： Steven Shannon

    发明人： Steven Shannon

    IPC分类号： H05H1/46 ,  H01P5/08

    CPC分类号： H01P5/08

    摘要： In one implementation, a method is provided for testing a plasma reactor multi-frequency matching network comprised of multiple matching networks, each of the multiple matching networks having an associated RF power source and being tunable within a tunespace. The method includes providing a multi-frequency dynamic dummy load having a frequency response within the tunespace of each of the multiple matching networks at an operating frequency of its associated RF power source. The method further includes characterizing a performance of the multi-frequency matching network based on a response of the multi-frequency matching network while simultaneously operating at multiple frequencies. In one embodiment, a plasma reactor multi-frequency dynamic dummy load is provided that is adapted for a multi-frequency matching network having multiple matching networks. Each of the multiple matching networks being tunable within a tunespace. The plasma reactor dynamic dummy load being capable of simultaneously providing a frequency response within the tunespace of each of the multiple matching networks at the operating frequency of its associated RF power source.

    摘要翻译： 在一个实现中，提供了一种用于测试由多个匹配网络组成的等离子体反应器多频匹配网络的方法，所述多个匹配网络中的每一个具有相关联的RF功率源并且可在调谐空间内调节。 该方法包括在其相关RF功率源的工作频率下提供在多个匹配网络中的每一个的调谐空间内具有频率响应的多频动态虚拟负载。 该方法还包括基于多频匹配网络的响应来表征多频匹配网络的性能，同时在多个频率下操作。 在一个实施例中，提供了适用于具有多个匹配网络的多频匹配网络的等离子体反应堆多频动态虚拟负载。 多个匹配网络中的每一个都可在调谐空间内调节。 等离子体反应堆动态虚拟负载能够在其相关RF电源的工作频率下同时在多个匹配网络中的每一个的调谐空间内提供频率响应。