公开(公告)号：US09748354B2

公开(公告)日：2017-08-29

申请号：US15043883

申请日：2016-02-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Wei V. Tang ,  Paul F. Ma ,  Steven C. H. Hung ,  Michael Chudzik ,  Siddarth Krishnan ,  Wenyu Zhang ,  Seshadri Ganguli ,  Naomi Yoshida ,  Lin Dong ,  Yixiong Yang ,  Liqi Wu ,  Shih Chung Chen

IPC: H01L29/76 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  H01L29/51 ,  H01L29/49

CPC classification number: H01L29/66446 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78603 ,  H01L29/78681

Abstract: Semiconductor devices incorporating multi-threshold voltage structures and methods of forming such semiconductor devices are provided herein. In some embodiments of the present disclosure, a semiconductor device having a multi-threshold voltage structure includes: a substrate; a gate dielectric layer atop the substrate, wherein the gate dielectric layer comprises an interface layer and a high-k dielectric layer atop the interface layer; a lanthanum nitride layer deposited atop the high-k dielectric layer; an interface of the interface layer and the high-k dielectric layer comprising lanthanum species from the lanthanum nitride layer; and a gate electrode layer atop the lanthanum nitride layer.

公开(公告)号：US09275853B2

公开(公告)日：2016-03-01

申请号：US14444783

申请日：2014-07-28

Applicant: Applied Materials, Inc.

Inventor： Tatsuya Sato ,  Steven C. H. Hung ,  Eran Newman

IPC: H01L21/768 ,  H01L29/66 ,  H01L21/02 ,  H01L29/51 ,  H01L29/40 ,  H01L21/306 ,  H01L21/321

CPC classification number: H01L21/02181 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/28176 ,  H01L21/306 ,  H01L21/321 ,  H01L29/401 ,  H01L29/513 ,  H01L29/517

Abstract: Embodiments of the disclosure generally relate to methods of adjusting transistor flat band voltage, and transistor gates formed using the same. In one embodiment, a method sequentially includes cleaning a substrate, annealing the substrate in a nitrogen-containing environment to form silicon-nitrogen bonds, hydroxylating the substrate surface, and depositing a hafnium oxide layer over the substrate. In another embodiment, the method further includes depositing an aluminum oxide layer over the substrate prior to depositing the hafnium oxide layer, and then annealing the substrate.

Abstract translation: 本公开的实施例一般涉及调整晶体管平带电压的方法，以及使用其形成的晶体管栅极。 在一个实施方案中，方法顺序包括清洗基底，在含氮环境中退火基底以形成硅 - 氮键，使基底表面羟化，以及在基底上沉积氧化铪层。 在另一个实施例中，该方法还包括在沉积氧化铪层之前在衬底上沉积氧化铝层，然后对衬底退火。