公开(公告)号：US20160217999A1

公开(公告)日：2016-07-28

申请号：US15001681

申请日：2016-01-20

Applicant: Applied Materials, Inc.

Inventor： Tatsuya E. Sato ,  Eran Newman

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  C23C16/403 ,  C23C16/45519 ,  C23C16/45551 ,  C23C16/45563 ,  H01L21/02178

Abstract: Methods of depositing a film comprising positioning a plurality of substrates on a substrate support in a processing chamber having a plurality of processing regions, each processing region separated from an adjacent region by a gas curtain. Alternating exposure to first reactive gases, purge gases, second reactive gases, and purge gas in at least one of the processing regions to deposit a film.

Abstract translation: 沉积膜的方法包括将多个基板定位在具有多个处理区域的处理室中的基板支撑件上，每个处理区域通过气幕与相邻区域分离。 在至少一个处理区域中交替暴露于第一反应气体，吹扫气体，第二反应气体和吹扫气体以沉积膜。

公开(公告)号：US20160215392A1

公开(公告)日：2016-07-28

申请号：US15001710

申请日：2016-01-20

Applicant: Applied Materials, Inc.

Inventor： Joseph Yudovsky ,  Kevin Griffin ,  Aaron Miller ,  Jeff Tobin ,  Eran Newman ,  Tatsuya E. Sato ,  Patricia M. Liu

IPC: C23C16/455

Abstract: Apparatus and methods for spatial atomic layer deposition are disclosed. The apparatus include a gas delivery system comprising a first gas flowing through a plurality of legs in fluid communication with a valve and a second gas flowing through a plurality of legs into the valves.

Abstract translation: 公开了用于空间原子层沉积的装置和方法。 该装置包括气体输送系统，其包括流过与阀流体连通的多个支腿的第一气体和流过多个支柱的阀的第二气体。

公开(公告)号：US09698009B2

公开(公告)日：2017-07-04

申请号：US15001681

申请日：2016-01-20

Applicant: Applied Materials, Inc.

Inventor： Tatsuya E. Sato ,  Eran Newman

IPC: H01L21/22 ,  H01L21/02 ,  H01L21/311 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/403 ,  C23C16/45519 ,  C23C16/45551 ,  C23C16/45563 ,  H01L21/02178

Abstract: Methods of depositing a film comprising positioning a plurality of substrates on a substrate support in a processing chamber having a plurality of processing regions, each processing region separated from an adjacent region by a gas curtain. Alternating exposure to first reactive gases, purge gases, second reactive gases, and purge gas in at least one of the processing regions to deposit a film.

公开(公告)号：US09275853B2

公开(公告)日：2016-03-01

申请号：US14444783

申请日：2014-07-28

Applicant: Applied Materials, Inc.

Inventor： Tatsuya Sato ,  Steven C. H. Hung ,  Eran Newman

IPC: H01L21/768 ,  H01L29/66 ,  H01L21/02 ,  H01L29/51 ,  H01L29/40 ,  H01L21/306 ,  H01L21/321

CPC classification number: H01L21/02181 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/28176 ,  H01L21/306 ,  H01L21/321 ,  H01L29/401 ,  H01L29/513 ,  H01L29/517

Abstract: Embodiments of the disclosure generally relate to methods of adjusting transistor flat band voltage, and transistor gates formed using the same. In one embodiment, a method sequentially includes cleaning a substrate, annealing the substrate in a nitrogen-containing environment to form silicon-nitrogen bonds, hydroxylating the substrate surface, and depositing a hafnium oxide layer over the substrate. In another embodiment, the method further includes depositing an aluminum oxide layer over the substrate prior to depositing the hafnium oxide layer, and then annealing the substrate.

Abstract translation: 本公开的实施例一般涉及调整晶体管平带电压的方法，以及使用其形成的晶体管栅极。 在一个实施方案中，方法顺序包括清洗基底，在含氮环境中退火基底以形成硅 - 氮键，使基底表面羟化，以及在基底上沉积氧化铪层。 在另一个实施例中，该方法还包括在沉积氧化铪层之前在衬底上沉积氧化铝层，然后对衬底退火。