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公开(公告)号：US06884999B1
公开(公告)日：2005-04-26
申请号：US09729513
申请日：2000-12-04
申请人： Sanjay K. Yedur , Bhanwar Singh , Bryan K. Choo
发明人： Sanjay K. Yedur , Bhanwar Singh , Bryan K. Choo
CPC分类号： H01L22/20 , G01Q80/00 , H01L2924/0002 , Y10S977/855 , Y10S977/874 , H01L2924/00
摘要： The present invention provides a system and method for detecting and repairing defects in semiconductor devices. According to the invention, defects are located using a scanning probe microscope, such as an atomic force microscope or a scanning tunneling microscope, and repaired at locations determined by the scanning probe microscope. The microscope itself, and in particular the detection tip, may be employed to remove the defects. For example, the tip may be used to machine away the defect, to apply an electric field to oxidize the defect, and/or to heat the defect causing it to burn or vaporize. By combining precise defect location capabilities of a scanning probe microscope with defect removal, the invention permits very precise correction of defects such as excess material and foreign particles on semiconductor substrates.
摘要翻译： 本发明提供一种用于检测和修复半导体器件中的缺陷的系统和方法。 根据本发明，使用诸如原子力显微镜或扫描隧道显微镜的扫描探针显微镜来定位缺陷，并在由扫描探针显微镜确定的位置处修复。 可以使用显微镜本身，特别是检测尖端来去除缺陷。 例如，尖端可用于加工缺陷，施加电场以氧化缺陷，和/或加热导致其燃烧或蒸发的缺陷。 通过将扫描探针显微镜的精确缺陷位置能力与缺陷去除组合，本发明允许非常精确地校正诸如半导体衬底上的过量材料和异物的缺陷。
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32.发明授权Use of carbon nanotubes as chemical sensors by incorporation of fluorescent molecules within the tube 失效通过在管内掺入荧光分子，使用碳纳米管作为化学传感器公开(公告)号：US06437329B1
公开(公告)日：2002-08-20
申请号：US09428098
申请日：1999-10-27
申请人： Sanjay K. Yedur , Bhanwar Singh , Bryan K. Choo
发明人： Sanjay K. Yedur , Bhanwar Singh , Bryan K. Choo
IPC分类号： G21K700
CPC分类号： G01Q70/12 , G01N21/6458 , G01N21/9501 , G01N2021/7786 , Y10S977/843 , Y10S977/844 , Y10S977/852 , Y10S977/876 , Y10S977/877
摘要： A system for analyzing a film and detecting a defect associated therewith includes a scanning probe microscope having a nanotube tip with a material associated therewith which exhibits a characteristic that varies with respect to a film composition at a location corresponding to the nanotube tip. The system also includes a detection system for detecting the material characteristic and a controller operatively coupled to the detection system and the scanning probe microscope. The controller configured to receive information associated with the detected characteristic and use the information to determine whether the film contains a defect at the location corresponding to the nanotube tip. The invention also includes a method of detecting a film composition at a particular location of a film or substrate. The method includes associating a material exhibiting a characteristic which varies with respect to a film composition with a nanotube tip of a scanning probe microscope and detecting the characteristic. The method then includes the step of determining a composition of a portion of the film using the detected characteristic.
摘要翻译： 用于分析胶片并检测与之相关的缺陷的系统包括扫描探针显微镜，其具有与其相关联的材料的纳米管末端，其具有相对于与纳米管尖端相对应的位置处的膜组成变化的特性。 该系统还包括用于检测材料特性的检测系统和可操作地耦合到检测系统和扫描探针显微镜的控制器。 所述控制器被配置为接收与检测到的特性相关联的信息并使用所述信息来确定所述胶片是否包含在与所述纳米管尖端相对应的位置处的缺陷。 本发明还包括在膜或基底的特定位置检测膜组成的方法。 该方法包括将表现出相对于膜组成变化的特性的材料与扫描探针显微镜的纳米管尖端相关联并检测特性。 该方法然后包括使用检测到的特性来确定膜的一部分的组成的步骤。
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公开(公告)号：US06545273B1
公开(公告)日：2003-04-08
申请号：US09729292
申请日：2000-12-04
IPC分类号： G01N2300
CPC分类号： G01Q40/00 , Y10S977/874
摘要： The present invention comprises a system for deconvolving tip effects associated with scanning tips in scanning probe microscopes and other scanning systems. The system comprises a scanning system operable to scan a feature or artifact with multiple, different type scanning tips and generate scan data associated therewith and a processor operably coupled to the scanning system. The processor is adapted to determine characteristics associated with the multiple, different type scanning tips using the scan data associated therewith. The present invention also comprises a method of determining scanning probe microscope tip effects. The method comprises the steps of scanning a feature or artifact with a plurality of different type scanning tips, resulting in a plurality of scan data sets associated with the different type scanning tips. The tip effects associated with the different type scanning tips are then deconvolved using the plurality of scan data sets.
摘要翻译： 本发明包括一种用于在扫描探针显微镜和其它扫描系统中与扫描尖端相关联的尖端效应的去卷积的系统。 该系统包括扫描系统，其可操作以用多个不同类型的扫描尖端扫描特征或伪像，并且生成与其相关联的扫描数据和可操作地耦合到扫描系统的处理器。 处理器适于使用与其相关联的扫描数据来确定与多个不同类型扫描尖端相关联的特性。 本发明还包括确定扫描探针显微镜尖端效应的方法。 该方法包括以多个不同类型扫描尖端扫描特征或伪影的步骤，导致与不同类型的扫描尖端相关联的多个扫描数据集。 然后使用多个扫描数据集对与不同类型的扫描尖端相关联的尖端效应进行去卷积。
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34.发明授权Deposition of an oxide layer to facilitate photoresist rework on polygate layer 有权沉积氧化物层以促进多晶硅层上的光致抗蚀剂返修公开(公告)号：US06191046B1
公开(公告)日：2001-02-20
申请号：US09266362
申请日：1999-03-11
IPC分类号： H01L21302
CPC分类号： H01L21/31133 , H01L21/0276 , H01L21/0332 , H01L21/0337
摘要： A method of reworking a photoresist used to pattern a semiconductor structure is provided. A dielectric layer is formed over an anti-reflective coating, the anti-reflective coating covering a first underlayer, the first underlayer covering a second underlayer. A first photoresist layer is formed and patterened over the dielectric layer to yield a desired photoresist pattern. An undesired feature in the patterned first photoresist layer is determined. The patterned first photoresist layer is removed. A second photoresist layer is formed and patterned over the dielectric layer. Exposed portions of the dielectric layer, the anti-reflective coating and the first underlayer are etched. A thin photoresist layer is formed over exposed portions of the second underlayer. A CMP process is performed to remove the dielectric layer. The thin photoresist layer is stripped.
摘要翻译： 提供了对用于图案化半导体结构的光致抗蚀剂进行返工的方法。 在抗反射涂层上形成电介质层，抗反射涂层覆盖第一底层，第一底层覆盖第二底层。 形成第一光致抗蚀剂层，并在电介质层上涂覆以产生所需的光致抗蚀剂图案。 确定图案化的第一光致抗蚀剂层中的不期望的特征。 去除图案化的第一光致抗蚀剂层。 在介电层上形成并图案化第二光致抗蚀剂层。 蚀刻介电层，抗反射涂层和第一底层的露出部分。 在第二底层的暴露部分上形成薄的光致抗蚀剂层。 执行CMP处理以去除电介质层。 剥去薄的光致抗蚀剂层。
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