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    Multi-beam SEM for sidewall imaging
    2.
    发明授权
    Multi-beam SEM for sidewall imaging 失效
    用于侧壁成像的多光束扫描

    公开(公告)号：US06566655B1

    公开(公告)日：2003-05-20

    申请号：US09729449

    申请日：2000-12-04

    申请人： Bryan K. Choo ,  Bhanwar Singh ,  Sanjay K. Yedur

    发明人： Bryan K. Choo ,  Bhanwar Singh ,  Sanjay K. Yedur

    IPC分类号： H01J3728

    CPC分类号： H01J37/28 ,  G01N23/2251 ,  H01J2237/1514 ,  H01J2237/24578 ,  H01J2237/2611 ,  H01J2237/2814

    摘要： The present invention provides a system and method that facilitates measuring and imaging topographical features of a substrate, including lines and trenches having reentrant profiles. One aspect of the invention provides an electron microscope that simultaneously scans a substrate with two or more electron beams that are directed against the substrate with substantially differing angles of incidence. Secondary electrons resulting from the interaction of the substrate with the beams are detected by one or more secondary electron detectors. Each secondary electron detector may simultaneously receive secondary electrons resulting from the interaction of the substrate with two or more electron beams. In another of its aspects, the invention provides methods of analysis that permit the interpretation of such data to analyze critical dimensions and form images of the substrate. Critical dimensions that may be determined include feature heights and reentrant profile shapes. The topographical information provided is more complete than that of conventional SEM imaging and is obtained more rapidly than would be possible using multiple scans of a single electron beam.

    摘要翻译： 本发明提供了一种便于测量和成像基底的形貌特征的系统和方法，包括具有折返轮廓的线和沟槽。 本发明的一个方面提供了一种电子显微镜，其同时以基本上不同的入射角度针对衬底的两个或更多个电子束扫描衬底。 由基板与光束的相互作用产生的二次电子被一个或多个二次电子检测器检测。 每个二次电子检测器可以同时接收由衬底与两个或更多个电子束的相互作用产生的二次电子。 在另一方面，本发明提供了分析方法，其允许解释这些数据以分析临界尺寸并形成基底的图像。 可能确定的关键尺寸包括特征高度和可重入的轮廓形状。 所提供的地形信息比常规SEM成像更完整，并且比使用单个电子束的多次扫描可能获得的地形信息更快。

    Cantilever assembly and scanning tip therefor with associated optical sensor
    3.
    发明授权
    Cantilever assembly and scanning tip therefor with associated optical sensor 有权
    悬臂组件和扫描头与相关的光学传感器

    公开(公告)号：US06479817B1

    公开(公告)日：2002-11-12

    申请号：US09537237

    申请日：2000-03-28

    申请人： Sanjay K. Yedur ,  Bhanwar Singh ,  Bryan K. Choo ,  Carmen L. Morales

    发明人： Sanjay K. Yedur ,  Bhanwar Singh ,  Bryan K. Choo ,  Carmen L. Morales

    IPC分类号： G01N2300

    CPC分类号： G01Q70/02 ,  G01Q30/02 ,  Y10S977/868 ,  Y10S977/873

    摘要： A measuring system and apparatus is provided in which a scanning probe microscope includes a high resolution optical sensor adapted to view a portion of a workpiece beneath the scanning probe tip. Also provided is a scanning tip assembly with a cantilever/tip assembly and an optical sensor associated with the cantilever assembly. In one embodiment, the optical sensor comprises a charge coupled device or other solid state camera associated with the cantilever and/or the tip. In addition, a scanning tip assembly is provided for a scanning probe microscope having an optical fiber adapted to receive reflected light from the at least a portion of the workpiece. Also provided is a measuring apparatus comprising a scanning probe microscope having an optical fiber adapted to receive reflected light from a feature of a workpiece, and an optical processor connected to the optical fiber to provided a visual image based on the reflected light from the feature of the workpiece.

    摘要翻译： 提供了一种测量系统和装置，其中扫描探针显微镜包括适于在扫描探针尖端下方观察工件的一部分的高分辨率光学传感器。 还提供了具有悬臂/尖端组件和与悬臂组件相关联的光学传感器的扫描末端组件。 在一个实施例中，光学传感器包括与悬臂和/或尖端相关联的电荷耦合器件或其它固态照相机。 此外，为扫描探针显微镜提供扫描头组件，其具有适于接收来自工件的至少一部分的反射光的光纤。 还提供了一种包括扫描探针显微镜的测量装置，该扫描探针显微镜具有适于接收来自工件特征的反射光的光纤，以及连接到光纤的光学处理器，以基于来自特征的反射光提供视觉图像 工件。

    Carbon nanotube probes in atomic force microscope to detect partially open/closed contacts
    4.
    发明授权
    Carbon nanotube probes in atomic force microscope to detect partially open/closed contacts 有权
    碳纳米管探针在原子力显微镜下检测部分开/闭触点

    公开(公告)号：US06455847B1

    公开(公告)日：2002-09-24

    申请号：US09558198

    申请日：2000-04-26

    申请人： Sanjay K. Yedur ,  Bhanwar Singh ,  Bryan K. Choo

    发明人： Sanjay K. Yedur ,  Bhanwar Singh ,  Bryan K. Choo

    IPC分类号： G01B528

    CPC分类号： G01Q60/38 ,  G01Q40/00 ,  G01Q70/12 ,  Y10S977/842 ,  Y10S977/852 ,  Y10S977/863 ,  Y10S977/869 ,  Y10S977/876

    摘要： The present invention relates to a system for measuring a linewidth or profile of a feature and comprises a scanning probe microscope having a nanotube scanning tip. The nature of the nanotube scanning tip provides high resolution and accurate measurements which is generally independent of a wearing thereof. The present invention also relates to a method of measuring a linewidth of profile of a feature and comprises the steps of scanning a portion of the feature on the substrate with a scanning probe microscope comprising a nanotube scanning tip and detecting a characteristic associated with the nanotube scanning tip. The method also comprises determining a characteristic associated with the portion of the feature on the substrate based on the detected nanotube scanning tip characteristic. Lastly, the present invention relates to a method of detecting a partially open contact hole and comprises scanning a region containing the contact hole with a scanning probe microscope comprising a nanotube scanning tip. The method further comprises generating topography data associated with the scanning step and determining whether the contact hole is fully open using the topography data.

    摘要翻译： 本发明涉及一种用于测量特征的线宽或轮廓的系统，并且包括具有纳米管扫描尖端的扫描探针显微镜。 纳米管扫描尖端的性质提供高分辨率和精确的测量，其通常与其磨损无关。 本发明还涉及一种测量特征轮廓线宽度的方法，包括以下步骤：用包括纳米管扫描尖端的扫描探针显微镜扫描基底上的部分特征，并检测与纳米管扫描有关的特征 小费。 该方法还包括基于检测到的纳米管扫描尖端特征来确定与衬底上的特征部分相关联的特性。 最后，本发明涉及一种检测部分打开的接触孔的方法，包括用包括纳米管扫描头的扫描探针显微镜扫描包含接触孔的区域。 该方法还包括产生与扫描步骤相关联的地形数据，并使用地形数据确定接触孔是否完全打开。

    UV-enhanced silylation process to increase etch resistance of ultra thin resists
    7.
    发明授权
    UV-enhanced silylation process to increase etch resistance of ultra thin resists 失效
    UV增强的硅烷化方法，以增加超薄抗蚀剂的耐蚀刻性

    公开(公告)号：US06451512B1

    公开(公告)日：2002-09-17

    申请号：US09565691

    申请日：2000-05-01

    申请人： Bharath Rangarajan ,  Ramkumar Subramanian ,  Khoi A. Phan ,  Bhanwar Singh ,  Michael K. Templeton ,  Sanjay K. Yedur ,  Bryan K. Choo

    发明人： Bharath Rangarajan ,  Ramkumar Subramanian ,  Khoi A. Phan ,  Bhanwar Singh ,  Michael K. Templeton ,  Sanjay K. Yedur ,  Bryan K. Choo

    IPC分类号： G03F700

    CPC分类号： G03F7/265 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/32139

    摘要： In one embodiment, the present invention relates to a method of processing an ultrathin resist, involving the steps of depositing the ultra-thin photoresist over a semiconductor substrate, the ultra-thin resist having a thickness less than about 3,000 Å; irradiating the ultra-thin resist with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin resist; and contacting the ultra-thin resist with a silicon containing compound in an environment of at least one of ultraviolet light and ozone, wherein contact of the ultra-thin resist with the silicon containing compound is conducted between irradiating and developing the ultra-thin resist or after developing the ultra-thin resist.

    摘要翻译： 在一个实施方案中，本发明涉及一种处理超薄抗蚀剂的方法，包括以下步骤：在半导体衬底上沉积超薄光致抗蚀剂，超薄抗蚀剂的厚度小于约; 用波长约250nm或更小的电磁辐射照射超薄抗蚀剂; 开发超薄抗蚀剂; 以及在紫外光和臭氧中的至少一种的环境下使超薄抗蚀剂与含硅化合物接触，其中超薄抗蚀剂与含硅化合物的接触在照射和显影超薄抗蚀剂之间进行，或 在开发超薄抗蚀剂后。

    Using a crystallographic etched silicon sample to measure and control the electron beam width of a SEM
    8.
    发明授权
    Using a crystallographic etched silicon sample to measure and control the electron beam width of a SEM 失效
    使用晶体蚀刻硅样品来测量和控制SEM的电子束宽度

    公开(公告)号：US06396059B1

    公开(公告)日：2002-05-28

    申请号：US09612807

    申请日：2000-07-10

    申请人： Bhanwar Singh ,  Bryan K. Choo ,  Sanjay K. Yedur

    发明人： Bhanwar Singh ,  Bryan K. Choo ,  Sanjay K. Yedur

    IPC分类号： H01J3726

    CPC分类号： H01J37/263

    摘要： A system and method is provided for measuring and determining the resolution of a SEM imaging system employing a crystallographic etched sample with a re-entrant cross-sectional profile. A re-entrant or negative profile is employed because the top-down view seen by the SEM is very sharp due to the fact the edge of the profile has zero width. Therefore, any apparent width seen in the signal is a function of the electron beam width alone. Scanning the beam across the profile provides a signal that moves from a first state to a second state. The time period or sloping portion of the signal from the first state to the second state provides a direct correlation to the electron beam width. Thus, scanning across the sample allows for a calculation of the electron beam width. By scanning across features of different orientations, the shape of the electron beam can be determined. Alternatively, by rotating the electron beam and scanning across the same feature, the shape of the electron beam can be determined. A system can utilize this information to adjust the resolution of the SEM or a display displaying the image.

    摘要翻译： 提供了一种系统和方法，用于测量和确定使用具有重新插入截面轮廓的晶体蚀刻样品的SEM成像系统的分辨率。 采用重入或负曲线，因为SEM所看到的自上而下的观点非常尖锐，这是因为轮廓的边缘具有零宽度。 因此，信号中看到的任何视在宽度都是单独的电子束宽度的函数。 在横截面上扫描光束提供从第一状态移动到第二状态的信号。 从第一状态到第二状态的信号的时间段或倾斜部分提供与电子束宽度的直接相关。 因此，扫描样本允许计算电子束宽度。 通过扫描不同取向的特征，可以确定电子束的形状。 或者，通过旋转电子束并扫过相同的特征，可以确定电子束的形状。 系统可以利用该信息来调整SEM的分辨率或显示图像的显示。

    Optimization of OPC design factors utilizing an advanced algorithm on a low voltage CD-SEM system
    9.
    发明授权
    Optimization of OPC design factors utilizing an advanced algorithm on a low voltage CD-SEM system 失效
    在低电压CD-SEM系统上利用高级算法优化OPC设计因子

    公开(公告)号：US06829380B1

    公开(公告)日：2004-12-07

    申请号：US09642959

    申请日：2000-08-21

    申请人： Bryan K. Choo ,  Bhanwar Singh ,  Sanjay K. Yedur

    发明人： Bryan K. Choo ,  Bhanwar Singh ,  Sanjay K. Yedur

    IPC分类号： G06K900

    CPC分类号： G03F7/70616 ,  G03F7/70441 ,  G03F7/70625

    摘要： A system for evaluating optical proximity corrected (OPC) designs is provided. The system includes an analysis system for performing measurements relating to a segment of a feature. The analysis system is configured to determine a first image for the segment of the feature based upon the measurements. The analysis system determines a second image to facilitate analysis of the first image and evaluates OPC designs based upon comparisons of the first and second image.

    摘要翻译： 提供了一种用于评估光学邻近校正（OPC）设计的系统。 该系统包括用于执行与特征的段相关的测量的分析系统。 分析系统被配置为基于测量来确定特征的段的第一图像。 分析系统确定第二图像以便于分析第一图像，并且基于第一和第二图像的比较来评估OPC设计。

    Grainless material for calibration sample
    10.
    发明授权
    Grainless material for calibration sample 失效
    用于校准样品的粗糙材料

    公开(公告)号：US06459482B1

    公开(公告)日：2002-10-01

    申请号：US09729294

    申请日：2000-12-04

    申请人： Bhanwar Singh ,  Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan ,  Michael K. Templeton ,  Sanjay K. Yedur ,  Bryan K. Choo

    发明人： Bhanwar Singh ,  Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan ,  Michael K. Templeton ,  Sanjay K. Yedur ,  Bryan K. Choo

    IPC分类号： G01J110

    CPC分类号： H01J37/28 ,  H01J2237/2826

    摘要： The present invention provides SEM systems, SEM calibration standards, and SEM calibration methods that improved accuracy in critical dimension measurements. The calibration standards have features formed with an amorphous material such as amorphous silicon. Amorphous materials lack the crystal grain structure of materials such as polysilicon and are capable of providing sharper edged features and higher accuracy patterns than grained materials. The amorphous material can be bound to a silicon wafer substrate through an intermediate layer of material, such as silicon dioxide. Where the intermediate layer is insulating material, as is silicon dioxide, the intermediate layer may be patterned with gaps to provide for electrical communication between the amorphous silicon and the silicon wafer. Charges imparted to the amorphous silicon during electron beam scanning may thereby drain to the silicon wafer rather than accumulating to a level where they would distort the electron beam.

    摘要翻译： 本发明提供SEM系统，SEM校准标准和SEM校准方法，提高了临界尺寸测量的精度。 校准标准品具有非晶体材料如非晶硅形成的特征。 无定形材料缺乏诸如多晶硅的材料的晶粒结构，并且能够提供比颗粒材料更尖锐的边缘特征和更高精度的图案。 非晶材料可以通过诸如二氧化硅的材料的中间层与硅晶片衬底结合。 在中间层是绝缘材料的情况下，如二氧化硅那样，中间层可以用间隙图案化以提供非晶硅和硅晶片之间的电连通。 因此，在电子束扫描期间赋予非晶硅的电荷可以从而被排出到硅晶片，而不是积聚到它们会使电子束变形的水平。