公开(公告)号：US20070099392A1

公开(公告)日：2007-05-03

申请号：US11262179

申请日：2005-10-28

申请人： Anthony Kurtz ,  Alexander Ned

发明人： Anthony Kurtz ,  Alexander Ned

IPC分类号： H01L21/76

CPC分类号： H01L21/76251

摘要： A method of fabricating a semiconductor-on-insulator device including: providing a first semiconductor wafer having an about 200 angstrom thick oxide layer thereover; etching the first semiconductor wafer to raise a pattern therein; doping the raised pattern of the first semiconductor wafer through the about 200 angstrom thick oxide layer; providing a second semiconductor wafer having an oxide thereover; and, bonding the first semiconductor wafer oxide to the second semiconductor wafer oxide at an elevated temperature.

摘要翻译： 一种制造绝缘体上半导体器件的方法，包括：提供其上具有约200埃厚的氧化物层的第一半导体晶片; 蚀刻第一半导体晶片以在其中升高图案; 通过约200埃厚的氧化物层掺杂第一半导体晶片的凸起图案; 提供其上具有氧化物的第二半导体晶片; 并且在升高的温度下将第一半导体晶片氧化物接合到第二半导体晶片氧化物。

公开(公告)号：US20070006660A1

公开(公告)日：2007-01-11

申请号：US11521122

申请日：2006-09-14

申请人： Anthony Kurtz

发明人： Anthony Kurtz

IPC分类号： G01L7/08

CPC分类号： G01L19/0609 ,  G01L13/025

摘要： A sensor is described, which basically consists of a leadless high sensitivity differential transducer chip which responds to both static and dynamic pressure. Located on the transducer are two sensors. One sensor has a thicker diaphragm and responds to both static and dynamic pressure to produce an output indicative of essentially static pressure, the static pressure being of a much higher magnitude than dynamic pressure. The other sensor has a thinner diaphragm and has one side or surface responsive to both static and dynamic pressure. The other side of the differential sensor or transducer structure has a long serpentine reference tube coupled to the underneath of the diaphragm. The tube only allows static pressure to be applied on the underside of the diaphragm and because of the natural resonance frequency of the tube, the dynamic pressure is suppressed and does not, in any manner, interface with the sensor or transducer having a thinned diaphragm. Thus, the thinned diaphragm differential unit provides an output which is indicative of the dynamic pressure, as the static pressure applied to both the top and bottom surfaces of the transducer sensor is cancelled.

摘要翻译： 描述了一种传感器，其基本上由无级高灵敏度差分换能器芯片组成，其响应静态和动态压力。 位于传感器上的是两个传感器。 一个传感器具有较厚的隔膜并响应静态和动态压力以产生指示基本静态压力的输出，静压力比动态压力大得多的量级。 另一个传感器具有更薄的隔膜，并且具有响应静态和动态压力的一侧或表面。 差分传感器或换能器结构的另一侧具有耦合到隔膜下方的长蛇形参考管。 该管仅允许静压力施加在隔膜的下侧，并且由于管的固有谐振频率，动压被抑制，并且不以任何方式与具有变薄隔膜的传感器或换能器相接合。 因此，由于施加到换能器传感器的顶表面和底表面的静压力被消除，所以薄化隔膜差分单元提供表示动态压力的输出。

公开(公告)号：US20060226738A1

公开(公告)日：2006-10-12

申请号：US11100682

申请日：2005-04-07

申请人： Anthony Kurtz ,  Adam Kane ,  Andrew Schwartz

发明人： Anthony Kurtz ,  Adam Kane ,  Andrew Schwartz

IPC分类号： H01L41/113

CPC分类号： G01L9/006 ,  G01L9/06

摘要： A high temperature pressure transducer includes a extended tubular member having a opening from a front to a back surface. The tubular member is preferably fabricated from a metal. At the front end of the tubular member is a ceramic sensor face or tip which basically is a ceramic disk having a curved front surface and having a extending stem which inserted into the front opening of the tubular member. The column is of a given length and terminates in a back end. The back end has a predetermined portion which consists of two flat surfaces each on opposite sides. The back end containing the flat surfaces is thinner than the thickness of the column. On these flat surfaces are positioned suitable semiconductor piezoresistors. When a force is applied to the ceramic sensor face, it is transmitted axially through the tube or column where it is received by the sensors positioned on the flats. The sensors produce an output indicative of the force applied. The sensors may be arranged in a suitable bridge configuration.

摘要翻译： 高温压力传感器包括具有从前到后表面的开口的延伸的管状构件。 管状构件优选地由金属制成。 在管状构件的前端是陶瓷传感器面或尖端，其基本上是具有弯曲前表面的陶瓷盘，并且具有插入到管状构件的前开口中的延伸杆。 该列具有给定的长度并终止于后端。 后端具有预定的部分，其由相对侧上的两个平坦表面组成。 包含平坦表面的后端比柱的厚度薄。 在这些平坦表面上定位合适的半导体压敏电阻。 当力被施加到陶瓷传感器表面时，其被轴向地传递通过管或柱，其被定位在平面上的传感器所接收。 传感器产生指示施加的力的输出。 传感器可以布置成合适的桥结构。

公开(公告)号：US20060219021A1

公开(公告)日：2006-10-05

申请号：US11447430

申请日：2006-06-06

申请人： Anthony Kurtz ,  Louis DeRosa

发明人： Anthony Kurtz ,  Louis DeRosa

IPC分类号： G01L15/00

CPC分类号： G01L9/06

摘要： A pressure transducer apparatus including: first and second pluralities of piezoresistors each coupled in Wheatstone bridge configurations, wherein the bridges are coupled together to provide a first output being indicative of a differential pressure; and, a third plurality of piezoresistors coupled in a Wheatstone bridge configuration and being suitable for providing a second output being indicative of an absolute line pressure. A compensator may be employed for adjusting the first output for line pressure variation responsively to the second output.

摘要翻译： 一种压力传感器装置，包括：第一和第二多个压电电阻器，每个以惠斯通电桥配置耦合，其中所述桥耦合在一起以提供指示压差的第一输出; 以及以惠斯通电桥结构耦合并且适于提供表示绝对线路压力的第二输出的第三多个压电电感器。 可以采用补偿器来调整响应于第二输出的线路压力变化的第一输出。

公开(公告)号：US20060191346A1

公开(公告)日：2006-08-31

申请号：US11341398

申请日：2006-01-26

申请人： Anthony Kurtz ,  Wolf Landmann

发明人： Anthony Kurtz ,  Wolf Landmann

IPC分类号： G01L7/00

CPC分类号： G01L27/007

摘要： An electronic switch of the type uses a piezoresistive Wheatstone bridge configuration to sense pressure. The output of the Wheatstone bridge is applied to an electronic control circuit which contains a comparator. The comparator monitors the output of the bridge and if the output voltage of the bridge exceeds a predetermined value, as indicated by the comparator, a switch is closed to illuminate a lamp indicating to the operator that the pressure has been exceeded. One terminal of a resistor is connected to an output of the bridge. The other terminal of the resistor is coupled to a switch which when operated, causes the resistor to be connected in parallel with one of the arms of the bridge, thereby producing an imbalance of the bridge. This imbalance, due to the shunting of the arm of the bridge by the resistor, causes the electronic control circuit to recognize an excessive pressure, whereby the electronics control circuit generates an output signal which causes the electronic switch to close, thereby illuminating the lamp.

摘要翻译： 该类型的电子开关使用压阻式惠斯通电桥配置来感测压力。 惠斯通电桥的输出应用于包含比较器的电子控制电路。 比较器监视桥的输出，并且如果比较器指示的桥的输出电压超过预定值，则关闭开关以点亮指示操作者已经超过压力的指示灯。 电阻器的一个端子连接到桥的输出端。 电阻器的另一个端子耦合到开关，当操作时，电阻器与桥的臂中的一个并联连接，从而产生桥的不平衡。 由于电阻器使桥的臂分流，这种不平衡导致电子控制电路识别过大的压力，由此电子控制电路产生使电子开关闭合的输出信号，从而照亮灯。

公开(公告)号：US20060157133A1

公开(公告)日：2006-07-20

申请号：US11036884

申请日：2005-01-14

申请人： Anthony Kurtz ,  Elias Geras

发明人： Anthony Kurtz ,  Elias Geras

IPC分类号： G01F1/42

CPC分类号： G01L19/0636 ,  G01L19/0681

摘要： A pressure restrictor for use with a pressure sensing element, said element capable of providing an output upon application of a pressure to said element. The pressure restrictor comprises a cylindrical member of a given diameter and length. The member having a plurality of apertures directed from a first end to a second end. A pressure restrictor housing holds and positions the cylindrical member in close proximity to the pressure sensing element at said second end by clamping the pressure restrictor between the housing and element. The apertures provided in the pressure restrictor are the sole path for application of pressure to the sensing element. The sensing element is a double diaphragm silicon sensor where one diaphragm is exposed to pressure and the other diaphragm is not exposed to pressure. Each diaphragm has located thereon a half bridge wherein both half bridges are connected to provide a full bridge. The full bridge provides an output strictly proportional to pressure while all inertial effects such as acceleration/vibration and so on are cancelled. The restrictor enables frequency selective pressure to be applied to the pressure sensing element. In this manner, the pressure restrictor which comprises the cylindrical member enables one to adjust the frequency response of the combustion transducer from 15 kHz up to 150 kHz.

摘要翻译： 一种与压力感测元件一起使用的压力限制器，所述元件能够在向所述元件施加压力时提供输出。 压力限制器包括具有给定直径和长度的圆柱形构件。 所述构件具有从第一端指向第二端的多个孔。 压力限制器壳体通过将压力限制器夹在壳体和元件之间来将所述圆柱形构件保持并定位在所述第二端附近的压力感测元件。 设置在压力限制器中的孔是用于向感测元件施加压力的唯一路径。 感测元件是双隔膜硅传感器，其中一个隔膜暴露在压力下，另一个隔膜不暴露于压力。 每个隔膜都位于其上，其中两个半桥连接以提供全桥。 全桥提供与压力严格成比例的输出，同时消除诸如加速/振动等所有惯性效应。 限流器使频率选择压力施加到压力感测元件。 以这种方式，包括圆柱形构件的压力限制器使得能够将燃烧换能器的频率响应从15kHz调节到150kHz。

公开(公告)号：US20050030991A1

公开(公告)日：2005-02-10

申请号：US10934251

申请日：2004-09-03

申请人： Anthony Kurtz ,  Joseph Van DeWeert

发明人： Anthony Kurtz ,  Joseph Van DeWeert

IPC分类号： H01S3/16 ,  H01S3/23

CPC分类号： C30B29/12 ,  C30B23/00 ,  C30B33/04 ,  H01S3/0612 ,  H01S3/0809 ,  H01S3/163 ,  H01S3/1681 ,  H01S3/2375 ,  H01S3/2383

摘要： A thin layer of ionic crystal is grown on a substrate. The crystal could be any type of ionic crystal, such as sodium chloride or potassium chloride. The crystal is a pure form of the chosen compound and may contain contaminants which would shift the wavelength of created color centers. On top of the first crystal layer, a second thin layer of a different type of crystal is deposited, such as lithium fluoride or sodium fluoride. When these two layers are radiated with gamma rays, they will each form color centers at the spots radiated. Because of the difference in crystalline properties of the two different ionic crystal centers, their color centers would be at different wavelengths. Each of the two separate ionic crystals will emit light at different characteristic wavelengths when illuminated at their unique absorption frequencies. Each layer can be made to lase separately. The top layer has an absorption energy greater than that of the bottom layer, so that the layer energy of the bottom layer absorption peak will pass through the top layer and be absorbed only by the bottom layer. There are many ways of forming F-centers in the two superimposed layers, such as by the use of selective gamma radiation by heating of an anion layer of the particular compound and then depositing the second ionic crystal on the first ionic crystal and then depositing an anion layer on the second crystal and then heating to produce a structure which will lase it to the different frequencies.

摘要翻译： 在衬底上生长薄层的离子晶体。 该晶体可以是任何类型的离子晶体，例如氯化钠或氯化钾。 晶体是所选化合物的纯形式，并且可能含有污染物，这些污染物将使所产生的色心的波长发生偏移。 在第一晶体层的顶部，沉积不同类型晶体的第二薄层，例如氟化锂或氟化钠。 当这两层用伽马射线照射时，它们将在辐射的点处形成彩色中心。 由于两个不同的离子晶体中心的晶体性质的差异，它们的色心将处于不同的波长。 当以其独特的吸收频率照射时，两个分离的离子晶体中的每一个将发射不同特征波长的光。 每个层可以分开制作。 顶层的吸收能量大于底层的吸收能，使得底层吸收峰的层能量将通过顶层并且仅被底层吸收。 在两个叠加层中形成F中心的方法有很多种，例如通过加热特定化合物的阴离子层，然后将第二离子晶体沉积在第一离子晶体上，然后沉积 阴离子层在第二个晶体上，然后加热，以产生一个结构，将其延伸到不同的频率。

公开(公告)号：US20080028863A1

公开(公告)日：2008-02-07

申请号：US11709639

申请日：2007-02-22

申请人： Anthony Kurtz ,  Wolf Landmann ,  Alexander Ned

发明人： Anthony Kurtz ,  Wolf Landmann ,  Alexander Ned

IPC分类号： G01L9/06

CPC分类号： G01L9/065

摘要： A high temperature pressure sensing system (transducer) including: a pressure sensing piezoresistive sensor formed by a silicon-on-insulator (SOI) process; a SOI amplifier circuit operatively coupled to the piezoresistive sensor; a SOI gain controller circuit including a plurality of resistances that when selectively coupled to the amplifier adjust a gain of the amplifier; a plurality of off-chip contacts corresponding to the resistances, respectively, for electrically activating the corresponding resistances and using a metallization layer for the SOI sensor and SOI ASIC suitable for high temperature interconnections (bonding); wherein the piezoresistive sensor, amplifier circuit and gain control circuit are suitable for use in environments having a temperature greater than 175 degrees C. and reaching between 250° C. and 300° C., and wherein the entire transducer has a high immunity to nuclear radiation.

摘要翻译： 一种高温压力感测系统（传感器），包括：由绝缘体上硅（SOI）工艺形成的压力感测压阻传感器; 可操作地耦合到压阻传感器的SOI放大器电路; 包括多个电阻的SOI增益控制器电路，当选择性地耦合到放大器时调节放大器的增益; 分别对应于电阻的多个片外触点，用于电激活相应的电阻并且使用用于SOI传感器的金属化层和适合于高温互连（接合）的SOI ASIC; 其中所述压阻传感器，放大器电路和增益控制电路适用于温度高于175摄氏度并达到250℃至300℃的环境中，并且其中整个换能器具有对核的高免疫性 辐射。

公开(公告)号：US20070264737A1

公开(公告)日：2007-11-15

申请号：US11827170

申请日：2007-07-11

申请人： Anthony Kurtz ,  Joseph Van DeWeert

发明人： Anthony Kurtz ,  Joseph Van DeWeert

IPC分类号： H01L21/02

CPC分类号： C30B29/12 ,  C30B23/00 ,  C30B33/04 ,  H01S3/0612 ,  H01S3/0809 ,  H01S3/163 ,  H01S3/1681 ,  H01S3/2375 ,  H01S3/2383

摘要： A thin layer of ionic crystal is grown on a substrate. The crystal could be any type of ionic crystal, such as sodium chloride or potassium chloride. The crystal is a pure form of the chosen compound and may contain contaminants which would shift the wavelength of created color centers. On top of the first crystal layer, a second thin layer of a different type of crystal is deposited, such as lithium fluoride or sodium fluoride. When these two layers are radiated with gamma rays, they will each form color centers at the spots radiated. Because of the difference in crystalline properties of the two different ionic crystal centers, their color centers would be at different wavelengths. Each of the two separate ionic crystals will emit light at different characteristic wavelengths when illuminated at their unique absorption frequencies. Each layer can be made to lase separately. The top layer has an absorption energy greater than that of the bottom layer, so that the layer energy of the bottom layer absorption peak will pass through the top layer and be absorbed only by the bottom layer. There are many ways of forming F-centers in the two superimposed layers, such as by the use of selective gamma radiation by heating of an anion layer of the particular compound and then depositing the second ionic crystal on the first ionic crystal and then depositing an anion layer on the second crystal and then heating to produce a structure which will lase it to the different frequencies.

摘要翻译： 在衬底上生长薄层的离子晶体。 该晶体可以是任何类型的离子晶体，例如氯化钠或氯化钾。 晶体是所选化合物的纯形式，并且可能含有污染物，这些污染物将使所产生的色心的波长发生偏移。 在第一晶体层的顶部，沉积不同类型晶体的第二薄层，例如氟化锂或氟化钠。 当这两层用伽马射线照射时，它们将在辐射的点处形成彩色中心。 由于两个不同的离子晶体中心的晶体性质的差异，它们的色心将处于不同的波长。 当以其独特的吸收频率照射时，两个分离的离子晶体中的每一个将发射不同特征波长的光。 每个层可以分开制作。 顶层的吸收能量大于底层的吸收能，使得底层吸收峰的层能量将通过顶层并且仅被底层吸收。 在两个叠加层中形成F中心的方法有很多种，例如通过加热特定化合物的阴离子层，然后将第二离子晶体沉积在第一离子晶体上，然后沉积 阴离子层在第二个晶体上，然后加热，以产生一个结构，将其延伸到不同的频率。

公开(公告)号：US20070157735A1

公开(公告)日：2007-07-12

申请号：US11716289

申请日：2007-03-09

申请人： Anthony Kurtz ,  Alexander Ned

发明人： Anthony Kurtz ,  Alexander Ned

IPC分类号： G01L9/00

CPC分类号： G01L9/0042 ,  G01L9/0055

摘要： A semiconductor chip for use in fabricating pressure transducers, including: a semiconductor wafer having a top and a bottom surface, a layer of an insulating material formed on the top surface, the bottom surface having at least two recesses of substantially equal dimensions and spaced apart, the recesses providing first and second substantially equal thin active areas, which areas deflect upon application to a force applied to the top surface, a first plurality of piezoresistive devices arranged in a given pattern and positioned on the insulating material and located within the first area, a second equal plurality of piezoresistive devices arranged in the identical pattern and located on the insulating material within the second active area, first connecting means for connecting the first plurality of piezoresistive devices in a first array, second connecting means for connecting the second plurality of piezoresistive devices in a second array corresponding to the first array.