利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

93 条记录 (耗时 0.031 秒)

    Semiconductor device and method for manufacturing the same
    31.
    发明申请
    Semiconductor device and method for manufacturing the same 审中-公开
    半导体装置及其制造方法

    公开(公告)号：US20070278588A1

    公开(公告)日：2007-12-06

    申请号：US11806173

    申请日：2007-05-30

    申请人： Kazuaki Nakajima

    发明人： Kazuaki Nakajima

    IPC分类号： H01L29/94 ,  H01L21/8238

    CPC分类号： H01L21/823857 ,  H01L21/28088 ,  H01L21/823842 ,  H01L23/485 ,  H01L29/66545 ,  H01L29/6659 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device manufacturing method has forming a gate insulation film on a silicon substrate having an nMOS transistor region and a pMOS transistor region, forming a first metal film on the gate insulation film and thereby forming a gate electrode of the nMOS transistor, removing the first metal film in the pMOS transistor region, forming a silicon film on the first metal film in the nMOS transistor region and on the gate insulation film in the pMOS transistor region, forming a second metal film having a work function higher than that of the first metal film on the silicon film and causing reaction between the second metal film and the silicon film and thereby forming a metal silicon compound film which serves as a gate electrode of the pMOS transistor.

    摘要翻译： 半导体器件制造方法在具有nMOS晶体管区域和pMOS晶体管区域的硅衬底上形成栅极绝缘膜，在栅极绝缘膜上形成第一金属膜，从而形成nMOS晶体管的栅电极，去除第一 金属膜，在nMOS晶体管区域的第一金属膜上和pMOS晶体管区域中的栅极绝缘膜上形成硅膜，形成功函数高于第一金属的第二金属膜 并引起第二金属膜和硅膜之间的反应，从而形成用作pMOS晶体管的栅电极的金属硅化合物膜。

    Method for manufacturing semiconductor device
    32.
    发明申请
    Method for manufacturing semiconductor device 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20070184592A1

    公开(公告)日：2007-08-09

    申请号：US11700178

    申请日：2007-01-31

    申请人： Kazuaki Nakajima

    发明人： Kazuaki Nakajima

    IPC分类号： H01L21/84 ,  H01L21/00

    CPC分类号： H01L21/823857 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665

    摘要： A gate insulating film is formed on a silicon substrate, a conductor film constituting a gate electrode is formed on the gate insulating film by a formation method using an organic material, and the silicon substrate, on which the conductor film is formed, is heated in a mixed atmosphere of steam which is an oxidizing atmosphere and hydrogen which is a reducing atmosphere with a partial pressure ratio of hydrogen to steam which is set such that carbon is oxidized and that a metal material constituting the conductor film is reduced.

    摘要翻译： 在硅衬底上形成栅极绝缘膜，通过使用有机材料的形成方法在栅极绝缘膜上形成构成栅电极的导体膜，并且将形成有导体膜的硅衬底加热 作为氧化气氛的蒸汽的混合气氛和作为还原气氛的氢气，其具有氢与蒸汽的分压比，其被设定为使得碳被氧化并且构成导体膜的金属材料减少。

    Method of manufacturing semiconductor device
    33.
    发明申请
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US20070099385A1

    公开(公告)日：2007-05-03

    申请号：US11540708

    申请日：2006-10-02

    申请人： Kazuaki Nakajima ,  Atsushi Yagishita

    发明人： Kazuaki Nakajima ,  Atsushi Yagishita

    IPC分类号： H01L21/336

    CPC分类号： H01L21/823835 ,  H01L21/28518 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

    摘要： The present invention provides a method of manufacturing a semiconductor device, comprising forming an electrode pattern made of silicon on a gate insulating film in an n-MOS region and a p-MOS region of a semiconductor substrate, masking the n-MOS region including the first electrode pattern with a first insulating film pattern, forming a first metal film made of platinum all over the surface, forming a gate electrode consisting of a platinum silicide in the p-MOS region, forming an silicon oxide film on the surface of the gate electrode by oxidation, dissolving away a non-reacting Pt film, removing the first insulating film pattern, masking the p-MOS region including the electrode pattern with a second insulating film pattern, forming a second metal film made of europium all over the surface, and forming a gate electrode consisting of a europium silicide in the n-MOS region.

    摘要翻译： 本发明提供一种制造半导体器件的方法，包括在n-MOS区的栅极绝缘膜和半导体衬底的p-MOS区中形成由硅制成的电极图案，掩蔽包括 具有第一绝缘膜图案的第一电极图案，在整个表面上形成由铂制成的第一金属膜，在p-MOS区中形成由铂硅化物组成的栅电极，在栅极的表面上形成氧化硅膜 电极通过氧化，去除不反应的Pt膜，去除第一绝缘膜图案，用第二绝缘膜图案掩蔽包括电极图案的p-MOS区，在整个表面上形成由铕制成的第二金属膜， 以及在n-MOS区中形成由硅化铕构成的栅电极。

    Method of manufacturing semiconductor device
    34.
    发明申请
    Method of manufacturing semiconductor device 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20070099363A1

    公开(公告)日：2007-05-03

    申请号：US11520827

    申请日：2006-09-14

    申请人： Kazuaki Nakajima

    发明人： Kazuaki Nakajima

    IPC分类号： H01L21/8234 ,  H01L21/336

    CPC分类号： H01L21/823835 ,  H01L21/28097 ,  H01L21/823871 ,  H01L29/66507 ,  H01L29/66545

    摘要： There are provided steps of: forming a gate insulating film on a semiconductor substrate; sequentially forming a first gate electrode material film, a first insulating film, a second gate electrode material film, which is thinner than the first gate electrode material film, on the gate insulating film, and patterning these films and the gate insulating film, thereby forming a gate electrode; forming a first metal film at least on the second gate electrode material film of the gate electrode and causing the first metal film to react, thereby changing the second gate electrode material film of the gate electrode to a first reaction layer; removing the first reaction layer on the gate electrode; forming an interlayer insulating film on the entire surface and flattening the interlayer insulating film until the first gate electrode material film of the gate electrode is exposed; forming a second metal film on the entire surface and causing the second metal film to react with the first gate electrode material film of the gate electrode, thereby chanting the first gate electrode material film to a second reaction layer until the second reaction layer contacts the gate insulating film.

    摘要翻译： 提供了以下步骤：在半导体衬底上形成栅极绝缘膜; 在栅极绝缘膜上依次形成第一栅电极材料膜，第一绝缘膜，比第一栅电极材料膜薄的第二栅极电极材料膜，并且对这些膜和栅极绝缘膜进行图案化，由此形成 栅电极; 至少在栅电极的第二栅极电极材料膜上形成第一金属膜，并使第一金属膜反应，从而将栅电极的第二栅电极材料膜改变为第一反应层; 去除栅电极上的第一反应层; 在整个表面上形成层间绝缘膜，并平坦化层间绝缘膜，直到露出栅电极的第一栅电极材料膜; 在整个表面上形成第二金属膜，并使第二金属膜与栅电极的第一栅电极材料膜反应，从而将第一栅极电极材料膜颂歌到第二反应层，直到第二反应层接触栅极 绝缘膜。

    Silicon composition in CMOS gates
    35.
    发明授权
    Silicon composition in CMOS gates 有权
    CMOS栅极中的硅组成

    公开(公告)号：US07172955B2

    公开(公告)日：2007-02-06

    申请号：US11287405

    申请日：2005-11-28

    申请人： Kouji Matsuo ,  Kazuaki Nakajima

    发明人： Kouji Matsuo ,  Kazuaki Nakajima

    IPC分类号： H01L21/28 ,  H01L21/44

    CPC分类号： H01L29/66545 ,  H01L21/28097 ,  H01L21/82345 ,  H01L29/4975 ,  H01L29/6656 ,  H01L29/6659

    摘要： A semiconductor device comprises an n-type MIS transistor comprising a first gate insulating film and a first gate electrode including an MSix film formed on the first gate insulating film, where M represents a metal element selected from tungsten and molybdenum and x is greater than 1, i.e., x>1; and a p-type MIS transistor comprising a second gate insulating film and a second gate electrode including an MSiy film formed on the second gate insulating film, where y is not less than 0 and less than 1, i.e., 0≦y

    摘要翻译： 半导体器件包括n型MIS晶体管，其包括第一栅极绝缘膜和第一栅电极，所述第一栅极包括形成在第一栅极绝缘膜上的MSi膜，其中M表示选自钨的金属元素 钼和x大于1，即x> 1; 以及p型MIS晶体管，其包括第二栅极绝缘膜和第二栅电极，所述第二栅电极包括形成在所述第二栅极绝缘膜上的MSi膜，其中y不小于0且小于1， 即0 <= y <1。

    Method of manufacturing semiconductor device
    36.
    发明申请
    Method of manufacturing semiconductor device 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20070026597A1

    公开(公告)日：2007-02-01

    申请号：US11494742

    申请日：2006-07-28

    申请人： Kazuaki Nakajima

    发明人： Kazuaki Nakajima

    IPC分类号： H01L21/8234

    CPC分类号： H01L21/823842 ,  H01L21/823835

    摘要： A method of manufacturing a semiconductor device including a MOS transistor includes: forming a gate electrode on a semiconductor substrate via a gate insulating film; performing ion implantation on the semiconductor substrate using the gate electrode as a mask, and performing a heat treatment, thereby forming a diffusion layer in the semiconductor substrate; depositing an insulating film on the gate electrode and the semiconductor substrate to bury the insulating film in the gate electrode; flattening the insulating film to expose an upper surface of the gate electrode; selectively forming a metal film only on the gate electrode; and changing a material of the gate electrode to a metal compound using a metal in the metal film.

    摘要翻译： 一种制造包括MOS晶体管的半导体器件的方法，包括：通过栅极绝缘膜在半导体衬底上形成栅电极; 使用栅电极作为掩模在半导体衬底上进行离子注入，并进行热处理，从而在半导体衬底中形成扩散层; 在栅电极和半导体衬底上沉积绝缘膜以将绝缘膜埋在栅电极中; 使绝缘膜平坦化，露出栅电极的上表面; 仅在栅电极上选择性地形成金属膜; 以及在所述金属膜中使用金属将所述栅电极的材料改变为金属化合物。

    Semiconductor device and method of manufacturing the same
    37.
    发明申请
    Semiconductor device and method of manufacturing the same 审中-公开
    半导体装置及其制造方法

    公开(公告)号：US20050275039A1

    公开(公告)日：2005-12-15

    申请号：US10967159

    申请日：2004-10-19

    申请人： Kazuaki Nakajima

    发明人： Kazuaki Nakajima

    IPC分类号： H01L27/092 ,  H01L21/335 ,  H01L21/8238 ,  H01L29/76 ,  H01L29/78

    CPC分类号： H01L21/823842 ,  H01L21/823835

    摘要： A semiconductor device is provided which includes a semiconductor substrate, a gate insulating film which is provided on the semiconductor substrate and contains a first metallic element and oxygen, and a gate electrode which is provided on the gate insulating film and includes a metal silicide film containing a second metallic element, and an impurity layer interposed between the gate insulating film and the metal silicide film and containing a p type impurity element, wherein a Gibbs free energy of a first system including an insulator containing the first metallic element and oxygen, the p type impurity element and silicon is smaller than a Gibbs free energy of a second system including a compound containing the first metallic element and the p type impurity element, and a silicon oxide.

    摘要翻译： 提供一种半导体器件，其包括半导体衬底，设置在半导体衬底上并且包含第一金属元素和氧的栅极绝缘膜，以及设置在栅极绝缘膜上并包括含有金属硅化物膜的金属硅化物膜的栅电极 第二金属元件和插入在栅极绝缘膜和金属硅化物膜之间并含有p型杂质元素的杂质层，其中包含含有第一金属元素和氧的绝缘体的第一系统的吉布斯自由能，p型 杂质元素和硅比包含含有第一金属元素和p型杂质元素的化合物的第二系统的吉布斯自由能小，以及氧化硅。

    Contents playback apparatus, contents playback method, and computer program
    38.
    发明授权
    Contents playback apparatus, contents playback method, and computer program 有权
    内容播放装置，内容播放方法和计算机程序

    公开(公告)号：US08947459B2

    公开(公告)日：2015-02-03

    申请号：US13426023

    申请日：2012-03-21

    申请人： Toru Osuga ,  Takashi Oshiba ,  Katsuhiro Ochiai ,  Yoshiaki Nishikawa ,  Kozo Satoda ,  Kazuaki Nakajima

    发明人： Toru Osuga ,  Takashi Oshiba ,  Katsuhiro Ochiai ,  Yoshiaki Nishikawa ,  Kozo Satoda ,  Kazuaki Nakajima

    IPC分类号： G09G5/00 ,  G06F3/147

    CPC分类号： G09G5/00 ,  G06F3/147 ,  G09G2340/045 ,  G09G2340/145 ,  G09G2354/00

    摘要： A contents playback apparatus and the like are provided which allow a user to promptly designate a desired portion when displaying a part of a content in an expanded manner, and are thus excellent in operability. A contents playback apparatus includes an associating unit and a playback unit. The associating unit generates association information for a plurality of characteristic portions contained in a content by referring to priority orders of the respective characteristic portions relative to each other, the association information associating each of the characteristic portions individually with a predetermined operation key of an input device included in the apparatus in accordance with the priority orders. The playback unit plays back, in response to detecting an operation of an operation key during display of the content, the characteristic portion corresponding to the operation key in an expanded display mode, in accordance with the association information.

    摘要翻译： 提供了一种内容播放装置等，其允许用户在以扩展方式显示内容的一部分时迅速指定期望部分，因此具有优异的可操作性。 内容播放装置包括关联单元和重放单元。 关联单元通过参照各个特征部分相对于彼此的优先顺序生成包含在内容中的多个特征部分的关联信息，将每个特征部分分别与输入装置的预定操作键相关联的关联信息 按照优先顺序包含在设备中。 响应于在显示内容期间检测到操作键的操作，回放单元根据关联信息重放与展开的显示模式中的操作键对应的特征部分。