公开(公告)号：US20050099865A1

公开(公告)日：2005-05-12

申请号：US10960122

申请日：2004-10-08

申请人： Hitoshi Hatate ,  Akifumi Kamijima

发明人： Hitoshi Hatate ,  Akifumi Kamijima

IPC分类号： H01L27/105 ,  G11C11/16 ,  H01L21/8246 ,  H01L43/08 ,  G11C11/00

CPC分类号： G11C11/16 ,  G11C11/1675

摘要： The present invention provides a magneto-resistive element capable of stably performing information writing operation by efficiently using a magnetic field generated by current flowing in a conductor and to a magnetic memory device having the same. A magneto-resistive element is constructed so that the area of a cross section orthogonal to the circumferential direction of a pair of magnetic yokes becomes the smallest in connection parts facing stacked bodies. With the configuration, magnetic flux density of return magnetic fields generated by passing write current to write bit lines and write word lines can be made the highest in the connection parts. Thus, information can be written efficiently and stably.

摘要翻译： 本发明提供一种磁阻元件，其能够通过有效地利用在导体中流动的电流产生的磁场和具有该磁场的磁存储装置来稳定地执行信息写入操作。 磁阻元件被构造成使得与一对磁轭的圆周方向正交的横截面的面积在面向堆叠体的连接部分中变得最小。 利用该结构，通过将写入电流写入写入位线和写入字线而产生的返回磁场的磁通密度可以在连接部分中变得最高。 因此，可以有效且稳定地写入信息。

公开(公告)号：US06886239B2

公开(公告)日：2005-05-03

申请号：US10309127

申请日：2002-12-04

申请人： Noriaki Kasahara ,  Tsuneo Kagotani ,  Hitoshi Hatate

发明人： Noriaki Kasahara ,  Tsuneo Kagotani ,  Hitoshi Hatate

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/60 ,  G11B5/127 ,  G11B5/33 ,  H04R31/00

CPC分类号： G11B5/3977 ,  G11B5/3967 ,  Y10T29/49021 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： In the method of making a thin-film magnetic head in accordance with the present invention, an electron beam resist is irradiated with electron beams in a state where an electrically conductive member is in contact with a magnetoresistive film. Since the magnetoresistive film electrically connects individual forming positions to be formed with magnetoresistive devices, charges stored near the forming positions upon irradiation with the electron beams can be drawn to the outside by way of the electrically conductive member. As a consequence, the electron beams are less likely to lose their rectilinearity, whereby the writing precision for patterning the magnetoresistive film by electron beam lithography can be improved.

摘要翻译： 在制造根据本发明的薄膜磁头的方法中，在导电构件与磁阻膜接触的状态下，用电子束照射电子束抗蚀剂。 由于磁阻膜电连接要由磁阻器件形成的各个形成位置，所以在与电子束照射时在形成位置附近存储的电荷可以通过导电构件被吸引到外部。 结果，电子束不太可能失去其直线性，从而可以提高通过电子束光刻对磁阻膜进行构图的写入精度。