公开(公告)号：US20200168750A1

公开(公告)日：2020-05-28

申请号：US16699363

申请日：2019-11-29

Applicant: Elenion Technologies, LLC

Inventor： Thomas Baehr-Jones ,  Yi Zhang ,  Michael J. Hochberg ,  Ari Novack

IPC: H01L31/0352 ,  H01L31/105 ,  H01L27/146 ,  H01L31/18 ,  H01L31/0256 ,  H01L31/028 ,  H01L31/107

Abstract: A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at −4 V reverse bias. 3-dB bandwidth is 30 GHz.

公开(公告)号：US20200153512A1

公开(公告)日：2020-05-14

申请号：US16745699

申请日：2020-01-17

Applicant: Elenion Technologies, LLC

Inventor： Matthew Akio Streshinsky ,  Ran Ding ,  Yang Liu ,  Ari Novack ,  Michael Hochberg ,  Alex Rylyakov

IPC: H04B10/61 ,  H04B10/40 ,  G02F1/313 ,  G02B6/42 ,  H04B10/50 ,  H04B10/2507

Abstract: A skew compensation apparatus and method. In an optical system that uses optical signals, skew may be generated as the optical signals are processed from an input optical signal to at least two electrical signals representative of the phase-differentiated optical signals. A compensation of the skew is provided by including an optical delay line in the path of the optical signal that does not suffer the skew (e.g., that serves as the time base for the skew measurement). The optical delay line introduces a delay Tskew equal to the delay suffered by the optical signal that is not taken as the time base. The two signals are thereby corrected for skew.

公开(公告)号：US20200052145A1

公开(公告)日：2020-02-13

申请号：US16524302

申请日：2019-07-29

Applicant: Elenion Technologies, LLC

Inventor： Ari Novack ,  Yang Liu ,  Yi Zhang

IPC: H01L31/107 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/0232 ,  H01L31/18

Abstract: A lateral Ge/Si APD constructed on a silicon-on-insulator wafer includes a silicon device layer having regions that are doped to provide a lateral electric field and an avalanche region. A region having a modest doping level is in contact with a germanium body. There are no metal contacts made to the germanium body. The electrical contacts to the germanium body are made by way of the doped regions in the silicon device layer.

公开(公告)号：US20200028008A1

公开(公告)日：2020-01-23

申请号：US16205580

申请日：2018-11-30

Applicant: Elenion Technologies, LLC

Inventor： Thomas Wetteland Baehr-Jones ,  Yi Zhang ,  Michael J. Hochberg ,  Ari Novack

IPC: H01L31/0352 ,  H01L31/107 ,  H01L31/028 ,  H01L27/146 ,  H01L31/0256 ,  H01L31/18 ,  H01L31/105

Abstract: A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at −4 V reverse bias. 3-dB bandwidth is 30 GHz.

公开(公告)号：US10529878B1

公开(公告)日：2020-01-07

申请号：US16205580

申请日：2018-11-30

Applicant: Elenion Technologies, LLC

Inventor： Thomas Wetteland Baehr-Jones ,  Yi Zhang ,  Michael J. Hochberg ,  Ari Novack

IPC: H01L31/0352 ,  H01L31/18

Abstract: A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at −4 V reverse bias. 3-dB bandwidth is 30 GHz.

公开(公告)号：US10401655B2

公开(公告)日：2019-09-03

申请号：US15381388

申请日：2016-12-16

Applicant: Elenion Technologies, LLC

Inventor： Matthew Akio Streshinsky ,  Ari Novack ,  Kishore Padmaraju ,  Michael J. Hochberg ,  Alexander Rylyakov

IPC: G02F1/01 ,  G02F1/21 ,  G02F1/225 ,  H04B10/50

Abstract: An optical waveguide modulator with automatic bias control is disclosed. A portion of the modulator light is mixed with reference light and converted to one or more electrical feedback signals. An electrical feedback circuit controls the modulator bias responsive to the feedback signals.

公开(公告)号：US20190227230A1

公开(公告)日：2019-07-25

申请号：US15875559

申请日：2018-01-19

Applicant: Elenion Technologies, LLC

Inventor： Ari Novack ,  Ruizhi Shi ,  Alexandre Horth ,  Ran Ding ,  Michael J. Hochberg

IPC: G02B6/12 ,  G02B6/42 ,  H04Q11/00 ,  G02B6/27 ,  G02B6/122 ,  H04B10/43 ,  H04J14/02

Abstract: A photonic chip includes a device layer and a port layer, with an optical port located at the port layer. Inter-layer optical couplers are provided for coupling light between the device and port layers. The inter-layer couplers may be configured to couple signal light but block pump light or other undesired wavelength from entering the device layer, operating as an input filter. The port layer may accommodate other light pre-processing functions, such as optical power splitting, that are undesirable in the device layer.

公开(公告)号：US20190137709A1

公开(公告)日：2019-05-09

申请号：US16238692

申请日：2019-01-03

Applicant: Elenion Technologies, LLC

Inventor： Ruizhi Shi ,  Yang Liu ,  Ari Novack ,  Yangjin Ma ,  Kishore Padmaraju ,  Michael J. Hochberg

IPC: G02B6/42 ,  G02B6/122

CPC classification number: G02B6/4277 ,  G02B6/12004 ,  G02B6/122 ,  G02B2006/12107 ,  G02B2006/12157

Abstract: A light shield may be formed in photonic integrated circuit between integrated optical devices of the photonic integrated circuit. The light shield may be built by using materials already present in the photonic integrated circuit, for example the light shield may include metal walls and doped semiconductor regions. Light-emitting or light-sensitive integrated optical devices or modules of a photonic integrated circuit may be constructed with light shields integrally built in.

公开(公告)号：US10209465B2

公开(公告)日：2019-02-19

申请号：US15659880

申请日：2017-07-26

Applicant: Elenion Technologies, LLC

Inventor： Ruizhi Shi ,  Yang Liu ,  Ari Novack ,  Yangjin Ma ,  Kishore Padmaraju ,  Michael J. Hochberg

IPC: G02B6/12 ,  G02B6/42 ,  G02B6/122

Abstract: A light shield may be formed in photonic integrated circuit between integrated optical devices of the photonic integrated circuit. The light shield may be built by using materials already present in the photonic integrated circuit, for example the light shield may include metal walls and doped semiconductor regions. Light-emitting or light-sensitive integrated optical devices or modules of a photonic integrated circuit may be constructed with light shields integrally built in.

公开(公告)号：US10156678B2

公开(公告)日：2018-12-18

申请号：US15685765

申请日：2017-08-24

Applicant: Elenion Technologies, LLC

Inventor： Ari Novack ,  Ruizhi Shi ,  Michael J. Hochberg ,  Thomas Baehr-Jones

IPC: G02B6/12 ,  G02B6/30 ,  G02B6/136 ,  G02B6/293 ,  G02B6/125 ,  G02B6/132 ,  G02B6/14 ,  G02B6/134 ,  G02B6/122 ,  G02B6/28

Abstract: A composite optical waveguide is constructed using an array of waveguide cores, in which one core is tapered to a larger dimension, so that all the cores are used as a composite input port, and the one larger core is used as an output port. In addition, transverse couplers can be fabricated in a similar fashion. The waveguide cores are preferably made of SiN. In some cases, a layer of SiN which is provided as an etch stop is used as at least one of the waveguide cores. The waveguide cores can be spaced away from a semiconductor layer so as to minimize loses.