公开(公告)号：US10680410B2

公开(公告)日：2020-06-09

申请号：US16665206

申请日：2019-10-28

Applicant: Elenion Technologies, LLC

Inventor： Yangjin Ma ,  Yang Liu ,  Ruizhi Shi ,  Thomas Wetteland Baehr-Jones ,  Saeed Fathololoumi

IPC: H01S5/14 ,  H01S5/068 ,  H01S3/083 ,  H01S5/10 ,  H01S3/13 ,  H01S5/02 ,  H01S5/40 ,  H01S5/028 ,  H01S3/106

Abstract: Practical silicon-based light sources are still missing, despite the progress in germanium lasers, because both silicon and germanium are indirect-band semiconductors and inefficient at light generation. A tunable and single mode external cavity laser comprising: a gain medium for generating light between a reflective surface at one end of the gain medium; and a wavelength selective reflector at the other end of a laser cavity. A splitter disposed in the laser cavity includes an input port optically coupled to the gain medium, an input/output port optically coupled to the wavelength selective reflector, and an output port for outputting laser light at selected wavelengths. The wavelength selective reflector reflects light of one or more selected periodic wavelengths back to the gain medium via the input/output port, and passes light of non-selected wavelengths out of the laser cavity.

公开(公告)号：US20200081313A1

公开(公告)日：2020-03-12

申请号：US16683451

申请日：2019-11-14

Applicant: Elenion Technologies, LLC

Inventor： Kishore Padmaraju ,  Thomas Wetteland Baehr-Jones ,  Bernd-Harald Horst Jurgen Rohde ,  Robert Palmer ,  Matthew Akio Streshinsky ,  Marc Bohn ,  Torsten Wuth

IPC: G02F1/225 ,  G02F1/01

Abstract: An optical waveguide modulator with automatic bias control is disclosed. A dither signal is applied to the modulator bias and its signature detected in light tapped from an output of the modulator using a phase sensitive dither detector such as a lock-in amplifier. The detected signal is processed using pre-recorded information defining the direction of the detected signal change relative to a change in the modulator bias, and the bias is adjusted in the direction determined using the information. An IQ bias of a quadrature modulator is controlled by dithering bias settings of two inner modulators at different dither frequencies, and detecting an oscillation at a sum frequency.

公开(公告)号：US10530487B2

公开(公告)日：2020-01-07

申请号：US16398422

申请日：2019-04-30

Applicant: Elenion Technologies, LLC

Inventor： Ran Ding ,  Thomas Wetteland Baehr-Jones ,  Michael J. Hochberg ,  Alexander Rylyakov

IPC: H04B10/04 ,  H04B10/556 ,  G02F1/225 ,  H04B10/50 ,  G02F1/01 ,  G02F1/025 ,  H04B10/516 ,  H04B10/54 ,  G02F1/21

Abstract: A distributed traveling-wave Mach-Zehnder modulator driver having a plurality of modulation stages that operate cooperatively (in-phase) to provide a signal suitable for use in a 100 Gb/s optical fiber transmitter at power levels that are compatible with conventional semiconductor devices and conventional semiconductor processing is described.

公开(公告)号：US20190199062A1

公开(公告)日：2019-06-27

申请号：US15855328

申请日：2017-12-27

Applicant: Elenion Technologies, LLC

Inventor： Yangjin Ma ,  Yang Liu ,  Ruizhi Shi ,  Thomas Wetteland Baehr-Jones ,  Saeed Fathololoumi

IPC: H01S5/14 ,  H01S5/068 ,  H01S3/083 ,  H01S3/13 ,  H01S5/028 ,  H01S5/10

CPC classification number: H01S5/141 ,  H01S3/083 ,  H01S3/106 ,  H01S3/1307 ,  H01S5/021 ,  H01S5/0287 ,  H01S5/06821 ,  H01S5/1003 ,  H01S5/1014 ,  H01S5/1025 ,  H01S5/142 ,  H01S5/4025 ,  H01S5/4062 ,  H01S5/4087

Abstract: Practical silicon-based light sources are still missing, despite the progress in germanium lasers, because both silicon and germanium are indirect-band semiconductors and inefficient at light generation. A tunable and single mode external cavity laser comprising: a gain medium for generating light between a reflective surface at one end of the gain medium; and a wavelength selective reflector at the other end of a laser cavity. A splitter disposed in the laser cavity includes an input port optically coupled to the gain medium, an input/output port optically coupled to the wavelength selective reflector, and an output port for outputting laser light at selected wavelengths. The wavelength selective reflector reflects light of one or more selected periodic wavelengths back to the gain medium via the input/output port, and passes light of non-selected wavelengths out of the laser cavity.

公开(公告)号：US10317623B2

公开(公告)日：2019-06-11

申请号：US16134086

申请日：2018-09-18

Applicant: Elenion Technologies, LLC

Inventor： Ruizhi Shi ,  Michael J. Hochberg ,  Ari Jason Novack ,  Thomas Wetteland Baehr-Jones

IPC: G02B6/12 ,  G02B6/13 ,  G02B6/134 ,  G02B6/136 ,  G02B6/30 ,  G02B6/132 ,  G02B6/28 ,  G02B6/122

Abstract: An integrated optical device fabricated in the back end of line process located within the vertical span of the metal stack and having one or more advantages over a corresponding integrated optical device fabricated in the silicon on insulator layer.

公开(公告)号：US10205302B2

公开(公告)日：2019-02-12

申请号：US15802812

申请日：2017-11-03

Applicant: Elenion Technologies, LLC

Inventor： Yi Zhang ,  Shuyu Yang ,  Michael J. Hochberg ,  Thomas Wetteland Baehr-Jones

IPC: H01S3/10 ,  H01S5/14 ,  H01S5/02 ,  H01S5/10 ,  H01S5/40 ,  H01S3/00 ,  H01S5/34 ,  H01S5/068 ,  H01S5/343

Abstract: A hybrid external cavity multi-wavelength laser using a QD RSOA and a silicon photonics chip is demonstrated. Four lasing modes at 2 nm spacing and less than 3 dB power non-uniformity were observed, with over 20 mW of total output power. Each lasing peak can be successfully modulated at 10 Gb/s. At 10−9 BER, the receiver power penalty is less than 2.6 dB compared to a conventional commercial laser. An expected application is the provision of a comb laser source for WDM transmission in optical interconnection systems.

公开(公告)号：US10185087B2

公开(公告)日：2019-01-22

申请号：US15825266

申请日：2017-11-29

Applicant: Elenion Technologies, LLC

Inventor： Yang Liu ,  Yangjin Ma ,  Ruizhi Shi ,  Michael J. Hochberg ,  Yi Zhang ,  Shuyu Yang ,  Thomas Wetteland Baehr-Jones

IPC: G02B6/36 ,  G02B6/125 ,  G02B6/28 ,  G02B6/10 ,  G02B27/00 ,  G06F17/50 ,  G02B6/122 ,  G06N3/12 ,  G02B6/12

Abstract: A compact, low-loss and wavelength insensitive Y-junction for submicron silicon waveguides. The design was performed using FDTD and particle swarm optimization (PSO). The device was fabricated in a 248 nm CMOS line. Measured average insertion loss is 0.28±0.02 dB across an 8-inch wafer. The device footprint is less than 1.2 μm×2 μm, orders of magnitude smaller than MMI and directional couplers.

公开(公告)号：US20180351651A1

公开(公告)日：2018-12-06

申请号：US16108857

申请日：2018-08-22

Applicant: Elenion Technologies, LLC

Inventor： Ran Ding ,  Thomas Wetteland Baehr-Jones ,  Michael J. Hochberg ,  Alexander Rylyakov

IPC: H04B10/556 ,  G02F1/225 ,  H04B10/50 ,  G02F1/01 ,  H04B10/54

CPC classification number: H04B10/5561 ,  G02F1/0123 ,  G02F1/025 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2201/127 ,  H04B10/505 ,  H04B10/5161 ,  H04B10/541

Abstract: A distributed traveling-wave Mach-Zehnder modulator driver having a plurality of modulation stages that operate cooperatively (in-phase) to provide a signal suitable for use in a 100 Gb/s optical fiber transmitter at power levels that are compatible with conventional semiconductor devices and conventional semiconductor processing is described.

公开(公告)号：US10044443B2

公开(公告)日：2018-08-07

申请号：US15704895

申请日：2017-09-14

Applicant: Elenion Technologies, LLC

Inventor： Thomas Wetteland Baehr-Jones ,  Michael J. Hochberg ,  Yang Liu

IPC: H04B10/04 ,  H04B10/516 ,  G02F1/313

Abstract: Described are various embodiments of a dual optical modulator, system and method. In one embodiment, an optical modulator modulates an input optical signal having a designated optical frequency. The modulator comprises first and second tunable modulators operable around the optical frequency and operatively disposed between a bus waveguide path and an opposed waveguide path. The modulator further comprises a relative optical phase-shifter optically coupled between the tunable modulators so to impart a relative optical phase shift between the bus waveguide path and the opposed waveguide path. The tunable modulators are respectively driveable to modulate a respective resonance thereof in complimentary directions relative to the optical frequency and thereby resonantly redirect a selectable portion of the input optical signal along the opposed waveguide path such that the relative optical phase shift is imparted thereto for output. Embodiments of an optical modulation method and an IQ modulator are also described.

公开(公告)号：US20180102447A1

公开(公告)日：2018-04-12

申请号：US15724458

申请日：2017-10-04

Applicant: Elenion Technologies, LLC

Inventor： Thomas Wetteland Baehr-Jones ,  Yi Zhang ,  Michael J. Hochberg ,  Ari Novack

IPC: H01L31/0352 ,  H01L31/18 ,  H01L31/107 ,  H01L31/028

CPC classification number: H01L31/0352 ,  H01L27/14638 ,  H01L27/14649 ,  H01L27/14685 ,  H01L27/14698 ,  H01L31/0256 ,  H01L31/028 ,  H01L31/105 ,  H01L31/107 ,  H01L31/1808 ,  Y02E10/547

Abstract: A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at −4 V reverse bias. 3-dB bandwidth is 30 GHz.