公开(公告)号：US11414568B2

公开(公告)日：2022-08-16

申请号：US17169676

申请日：2021-02-08

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Ting-Kai Huang ,  Tawei Lin ,  Bin Hu ,  Liqing Wen ,  Yannan Liang

IPC: C09G1/02 ,  H01L21/321 ,  C09K15/30

Abstract: A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.

公开(公告)号：US11279850B2

公开(公告)日：2022-03-22

申请号：US16299935

申请日：2019-03-12

Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.

Inventor： David (Tawei) Lin ,  Bin Hu ,  Liqing (Richard) Wen ,  Yannan Liang ,  Ting-Kai Huang

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/306 ,  C23F1/00 ,  C23F1/44

Abstract: The compositions of the present disclosure polish surfaces or substrates that at least partially include ruthenium. The composition includes a synergistic combination of ammonia and oxygenated halogen compound. The composition may further include abrasive and acid(s). A polishing composition for use on ruthenium materials may include ammonia, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; hydrogen periodate, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; silica, present in an amount of 0.01 wt % to 12 wt %, based on the total weight of the composition; and organic sulfonic add, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition, wherein the pH of the composition is between 6 and 8.

公开(公告)号：US20210087431A1

公开(公告)日：2021-03-25

申请号：US17024766

申请日：2020-09-18

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Yannan Liang ,  Liqing Wen ,  Bin Hu ,  Tawei Lin

IPC: C09G1/02 ,  C23F3/00

Abstract: A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a first low-k removal rate inhibitor; a second low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a cobalt corrosion inhibitor. This disclosure also relates to a method of polishing a substrate that comprises cobalt using the polishing compositions described herein.