公开(公告)号：US20230203343A1

公开(公告)日：2023-06-29

申请号：US17880758

申请日：2022-08-04

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Ting-Kai Huang ,  Tawei Lin ,  Bin Hu ,  Liqing Wen ,  Yannan Liang

IPC分类号： C09G1/02 ,  H01L21/321 ,  C09K15/30

CPC分类号： C09G1/02 ,  H01L21/3212 ,  C09K15/30

摘要： A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.

公开(公告)号：US20210253904A1

公开(公告)日：2021-08-19

申请号：US17169685

申请日：2021-02-08

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Ting-Kai Huang ,  Tawei Lin ,  Bin Hu ,  Liqing Wen ,  Yannan Liang

IPC分类号： C09G1/02 ,  B24B37/04

摘要： A polishing composition, includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a ruthenium removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.

公开(公告)号：US20210253903A1

公开(公告)日：2021-08-19

申请号：US17169676

申请日：2021-02-08

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Ting-Kai Huang ,  Tawei Lin ,  Bin Hu ,  Liqing Wen ,  Yannan Liang

IPC分类号： C09G1/02 ,  C09K15/30 ,  H01L21/321

摘要： A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.

公开(公告)号：US20230348754A1

公开(公告)日：2023-11-02

申请号：US18127053

申请日：2023-03-28

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Yannan Liang ,  Bin Hu ,  Hsin Hsien Lu

IPC分类号： C09G1/02 ,  H01L21/768 ,  H01L21/321

CPC分类号： C09G1/02 ,  H01L21/3212 ,  H01L21/7684

摘要： This disclosure relates to polishing compositions containing at least one abrasive, at least one organic acid or a salt thereof, at least one organic solvent in an amount of from about 3% to about 50% by weight of the composition, and an aqueous solvent.

公开(公告)号：US20230136601A1

公开(公告)日：2023-05-04

申请号：US17970668

申请日：2022-10-21

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Eric Turner ,  Bin Hu ,  Yannan Liang ,  James Johnston ,  James McDonough

IPC分类号： C09G1/02 ,  H01L21/306 ,  H01L21/321

摘要： A polishing composition includes an anionic abrasive; a pH adjuster; a transition metal catalyst; and an amino acid. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises tungsten or molybdenum; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.

公开(公告)号：US20210261822A1

公开(公告)日：2021-08-26

申请号：US17318011

申请日：2021-05-12

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： David (Tawei) Lin ,  Bin Hu ,  Liqing (Richard) Wen ,  Yannan Liang ,  Ting-Kai Huang

IPC分类号： C09G1/02 ,  H01L21/321 ,  C09K3/14 ,  C09G1/06 ,  C09K13/06 ,  C09G1/04 ,  B24B1/00 ,  C09G1/00 ,  B24B37/04 ,  H01L21/306

摘要： A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.

公开(公告)号：US20210108106A1

公开(公告)日：2021-04-15

申请号：US17063965

申请日：2020-10-06

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Yannan Liang ,  Bin Hu ,  Liqing Wen ,  Shu-Wei Chang

IPC分类号： C09G1/02 ,  H01L21/321

摘要： A polishing composition includes an abrasive; an optional pH adjuster; a barrier film removal rate enhancer; a TEOS removal rate inhibitor; a cobalt removal rate enhancer; an azole-containing corrosion inhibitor; and a cobalt corrosion inhibitor.

公开(公告)号：US20240327675A1

公开(公告)日：2024-10-03

申请号：US18616347

申请日：2024-03-26

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Hanyu Fan ,  Bin Hu ,  Yannan Liang ,  Ting-Kai Huang ,  Eric Turner

IPC分类号： C09G1/02

CPC分类号： C09G1/02

摘要： This disclosure relates to a polishing composition that includes an abrasive; at least one Si-containing compound including an acidic group, an ester thereof, or a salt thereof; and water. This disclosure also features a method of using the polishing composition to polish a substrate.

公开(公告)号：US20230135325A1

公开(公告)日：2023-05-04

申请号：US17970667

申请日：2022-10-21

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Yannan Liang ,  Bin Hu ,  Abhudaya Mishra ,  Ting-Kai Huang ,  Yibin Zhang ,  James Johnston ,  James McDonough

IPC分类号： C09G1/02 ,  H01L21/306

摘要： A polishing composition includes an anionic abrasive, a pH adjuster a low-k removal rate inhibitor, a ruthenium removal rate enhancer, and water. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.

公开(公告)号：US11414568B2

公开(公告)日：2022-08-16

申请号：US17169676

申请日：2021-02-08

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Ting-Kai Huang ,  Tawei Lin ,  Bin Hu ,  Liqing Wen ,  Yannan Liang

IPC分类号： C09G1/02 ,  H01L21/321 ,  C09K15/30

摘要： A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.