公开(公告)号：US11851585B2

公开(公告)日：2023-12-26

申请号：US17880758

申请日：2022-08-04

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Ting-Kai Huang ,  Tawei Lin ,  Bin Hu ,  Liqing Wen ,  Yannan Liang

IPC分类号： C09G1/02 ,  H01L21/321 ,  C09K15/30

CPC分类号： C09G1/02 ,  C09K15/30 ,  H01L21/3212

摘要： A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.

公开(公告)号：US11414568B2

公开(公告)日：2022-08-16

申请号：US17169676

申请日：2021-02-08

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Ting-Kai Huang ,  Tawei Lin ,  Bin Hu ,  Liqing Wen ,  Yannan Liang

IPC分类号： C09G1/02 ,  H01L21/321 ,  C09K15/30

摘要： A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.

公开(公告)号：US20210087431A1

公开(公告)日：2021-03-25

申请号：US17024766

申请日：2020-09-18

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Yannan Liang ,  Liqing Wen ,  Bin Hu ,  Tawei Lin

IPC分类号： C09G1/02 ,  C23F3/00

摘要： A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a first low-k removal rate inhibitor; a second low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a cobalt corrosion inhibitor. This disclosure also relates to a method of polishing a substrate that comprises cobalt using the polishing compositions described herein.

公开(公告)号：US20230203343A1

公开(公告)日：2023-06-29

申请号：US17880758

申请日：2022-08-04

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Ting-Kai Huang ,  Tawei Lin ,  Bin Hu ,  Liqing Wen ,  Yannan Liang

IPC分类号： C09G1/02 ,  H01L21/321 ,  C09K15/30

CPC分类号： C09G1/02 ,  H01L21/3212 ,  C09K15/30

摘要： A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.

公开(公告)号：US20210253904A1

公开(公告)日：2021-08-19

申请号：US17169685

申请日：2021-02-08

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Ting-Kai Huang ,  Tawei Lin ,  Bin Hu ,  Liqing Wen ,  Yannan Liang

IPC分类号： C09G1/02 ,  B24B37/04

摘要： A polishing composition, includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a ruthenium removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.

公开(公告)号：US20210253903A1

公开(公告)日：2021-08-19

申请号：US17169676

申请日：2021-02-08

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Ting-Kai Huang ,  Tawei Lin ,  Bin Hu ,  Liqing Wen ,  Yannan Liang

IPC分类号： C09G1/02 ,  C09K15/30 ,  H01L21/321

摘要： A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.